CFK2162 Search Results

3F1 SMD Transistor

Abstract: 3fx transistor transistor 3Fn 24 smd transistor lg smd transistor LF smd JH transistor celeritek CCS1933 F7104 smd transistor fh
Contextual Info: CCS1933 Product Information March 1996 1 of 2 1.85 to 2.0 GHz 2 Watt Amplifier Chip Set Features ❏ High Gain ≈ 35 dB ❏ +33 dBm Output Power @ 5 Volts ❏ >45% Efficiency Achievable ❏ Small Size Functional Block Diagram CMM1301 CFK2162 Applications

CFK2162-P3

Abstract: CFK2162-P3-000T
Contextual Info: CFK2162-P3 QNX@š•@RNP@gh¡ KST@‡b“@p•žˆ˜@g„a @fet mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY †•“

7474 pin out diagram

Abstract: FET 4953 lm 7223 PBA FET CFK2162-P1 CFK2162-P1-000T k 3878 4953 FET LM 7926
Contextual Info: f r a E D i K CFK2162-P1 i r P ro d u c t S p e c ific a tio n s D e c e m b e r 1 9 9 7 1 o f 4 800 to 900 MHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45 % Linear Power Added Efficiency

m1301

Abstract: CELERITEK SWITCH 6 PIN SMD 3236 D0805 transistor d 1933 smd transistor pin out data celeritek amplifier
Contextual Info: e CELERITEK CCS1933 Product Information March 1 9 9 6 iof 2 1.85 to 2.0 GHz 2 Watt Amplifier Chip Set Features □ High Gain - 35 dB □ +33 dBm Output Power @ 5 Volts □ >45% Efficiency Achievable □ Small Size Functional Block Diagram CFK2162 I Applications

014-13

Abstract: CFK2162-P1 CFK2162-P1-000T
Contextual Info: CFK2162-P1 XPP@š•@YPP@mh¡ KST@‡b“@p•žˆ˜@g„a @fet mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY †•“

CFK2162-P5

Abstract: CFK2162-P5-000T
Contextual Info: CFK2162-P5 RNS@š•@RNU@gh¡ KST@‡b“@p•žˆ˜@g„a @fet mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY †•“

Contextual Info: « i f i i m i CFK2162-P3 r Product Specifications D ecem b er 1997 iof4 1.8 to 2.0 GHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products

smd transistor p5

Abstract: SMD TRANSISTOR LIST 51K SMD RESISTOR celeritek SMD 0805 capacitor CCS2933 CFK2162-P5 CMM2301 CMM2301-AM CSW2102
Contextual Info: CELERITEK g CCS2933 2.4 to 2.5 GHz 2 Watt Amplifier Chip Set P ro d uct Info rm ation M arch 19 96 1 of 2 Features □ High Gain - 28 dB □ +33 dBm Output Power @ 5 Volts □ 33% Efficient □ Small Size Functional Block Diagram 1 CMM2301 CFK2162 I Applications

2794J

Abstract: AFL SO-8
Contextual Info: 5 €SLER!TEK CFK2162-P5 2.3 to 2.5 GHz +34 dBm Power GaAs FET P roduct S p ec ifica tio n s M ay 19 96 1 of 4 Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products

Contextual Info: r e i C D iw CFK2162-P1 if Product Specifications D ecem ber 1997 1 of 4 800 to 900 MHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products

IGD 507 an

Contextual Info: m CDIKV Product S pecificatio n s D ecem ber 1 9 9 7 CFK2162-P5 2.3 to 2.5 GHz +34 dBm Power GaAs FET 1 of 4 Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products

lambda LMS

Abstract: 5B42 CFK2162-P3 CFK2162-P3-000T
Contextual Info: « i m w i P ro d u c t S p e c ific a tio n s D ecem ber 1997 iof4 CFK2162-P3 r 1.8 to 2.0 GHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power O utput □ P roprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third O rder Products

DB1130

Abstract: CFK2162-P1 CFK2162-P1-000T 0951 13727
Contextual Info: 800-900 MHz +34 dBm Power GaAs FET August 2006 - Rev 03-Aug-06 CFK2162-P1 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 4 Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc.

D 961 P5

Abstract: CFK2162-P5 CFK2162-P5-000T
Contextual Info: CFK2162-P5 RNS@š•@RNU@gh¡ KST@‡b“@p•žˆ˜@g„a @fet mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY †•“

7586 GE

Abstract: CFK2162-P1 CFK2162-P1-000T
Contextual Info: 0.8-1.0 GHz +34 dBm Power GaAs FET November 2007 - Rev 15-Nov-07 CFK2162-P1 Features Package Diagram High Gain +34 dBm Power Output Proprietary Power FET Process >45% Linear Power Added Efficiency +29 dBm with 30 dBc Third Order Products Surface Mount SO-8 Power Package

Contextual Info: 0.8-1.0 GHz +34 dBm Power GaAs FET July 2007 - Rev 31-Jul-07 CFK2162-P1 Features Package Diagram High Gain +34 dBm Power Output Proprietary Power FET Process >45% Linear Power Added Efficiency +29 dBm with 30 dBc Third Order Products Surface Mount SO-8 Power Package

SE 0947

Abstract: FET 3878 0942S application of ic 7474
Contextual Info: ICELERiTEK CFK2162-P1 800 to 900 MHz +34 dBm Power GaAs FET Product Specifications M ay 1996 1 o f 4 Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products

Matsuo TANTALUM SMD CAPACITOR

Abstract: SMD RESISTOR 001 Q2 smd celeritek amplifier
Contextual Info: CCS2933 Product Information March 1996 1 o f 2 2.4 to 2.5 GHz 2 Watt Amplifier Chip Set Features □ High Gain - 28 dB □ +33 dBm Output Power @ 5 Volts □ 33% Efficient □ Small Size Functional Block Diagram CFK2162 I Applications □ ISM Band Base Stations

CFK2162-P3

Abstract: CFK2162-P3-000T
Contextual Info: CFK2162-P3 Product Specifications July 1997 1 of 4 1.8 to 2.0 GHz +34 dBm Power GaAs FET Features ❏ High Gain ❏ +34 dBm Power Output ❏ Proprietary Power FET Process ❏ >45% Linear Power Added Efficiency ❏ +29 dBm with 30 dBc Third Order Products

CFK2162-P5-000T

Abstract: CFK2162-P5
Contextual Info: CFK2162-P5 Product Specifications July 1997 1 of 4 2.3 to 2.5 GHz +34 dBm Power GaAs FET Features ❏ High Gain ❏ +34 dBm Power Output ❏ Proprietary Power FET Process ❏ >45% Linear Power Added Efficiency ❏ +29 dBm with 30 dBc Third Order Products

Contextual Info: CFK2162-P3 QNX@š•@RNP@gh¡ KST@‡b“@p•žˆ˜@g„a @fet mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY †•“

CFK2162-P1

Abstract: CFK2162-P1-000T FET 3878
Contextual Info: CFK2162-P1 Product Specifications May 1996 1 of 4 800 to 900 MHz +34 dBm Power GaAs FET Features ❏ High Gain ❏ +34 dBm Power Output ❏ Proprietary Power FET Process ❏ >45% Linear Power Added Efficiency ❏ +29 dBm with 30 dBc Third Order Products

FET 4953

Abstract: EL 431 044 PBA FET CFK2162-P5 CFK2162-P5-000T R15-G IGD 507 an
Contextual Info: « i e o i K Product S p ecificatio n s D ecem ber 1997 iof4 2.3 to 2.5 GHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products

2SC 1885

Contextual Info: ISE lE ltm P ro d uct S p ecificatio n s M ay 1 9 9 6 1 of 4 Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products □ Surface Mount SO-8 Power Package