CGY52
Abstract: Q68000-A8615 MMIC marking code 52 23/MMIC marking code 52
Text: CGY 52 GaAs MMIC Datasheet * Two stages monolithic microwave IC MMICAmplifier * All gold metallisation * Chip fully passivated * Operating voltage range: 2.7 to 5 V
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CGY52
Q68000-A8615
100pF
50Ohm
CGY52
Q68000-A8615
MMIC marking code 52
23/MMIC marking code 52
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x16 3 marking -ddr -sdram -rimm -sram -flash -m
Abstract: CGY52 Q68000-A8615 mmic-amplifier 7CH150
Text: SIEMENS GaAs MM IC CGY 52 Datasheet * Two stages monolithic microwave 1C MMICAmplifier * All gold metallisation *C h ip fully passivated •O perating voltage range: 2.7 to 5 V *5 0 Q input / output ESD: Electrostatic discharge sensitive device, observe handling precautions!
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CGY52
Q68000-A8615
CGY52,
E3Sb05
x16 3 marking -ddr -sdram -rimm -sram -flash -m
mmic-amplifier
7CH150
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40
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023SbOS
CGY50
OT-143
CGY40
CLY10
CGY52
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Untitled
Abstract: No abstract text available
Text: SIEMENS CGY 52 GaAs MMIC D a t a s h e e t * Two stages monolithic microwave IC MMICAmpiifier * All gold metallisation * Chip fully passivated * Operating voltage range: 2.7 to 5 V * 50 £2 input / output 5 - _ , ESD: Electrostatic discharge sensitive device,
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VS005554
CGY52
Q68000-A8615
CGY52,
500hm
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Untitled
Abstract: No abstract text available
Text: SIEMENS CG Y 52 GaAs MM IC Datasheet * Two stages monolithic microwave IC MMICAmplifier * All gold metallisation *Chip fully passivated * Operating voltage range: 2.7 to 5 V *50 Q. input / output 3 ESD: Electrostatic discharge sensitive device, observe handling precautions!
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VS005554
CGY52
Q68000-A8615
Channel-sold009
CGY52,
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Untitled
Abstract: No abstract text available
Text: SIEM ENS CGY 52 GaAs MMIC Preliminary Data • Two stages monolithic microwave 1C M M IC amplifier • All gold metallization • Chip fully passivated • Operating voltage range: 3 to 6 V • 50 £2 input / output E S D : Electrostatic discharge sensitive device, observe handling precautions!
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CFY19
Abstract: CFY19-18 CFY19-22 BF995 BF963 CFY10 BF961 BF964S BF965 CFY65-14
Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors " BF961 BF963 BF964S BF965 BF966S BF988 BF987 Triode V DS V ^DS niA Pt mW 20 20 20 20 20 12 20 30 50 30 30 30 30 30 200 200 200
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E35bOS
DD45427
BF961
BF995
BF963
BF993
BF964S
BF994S
BF965
BF997
CFY19
CFY19-18
CFY19-22
BF995
CFY10
CFY65-14
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CFY76-10
Abstract: CFY76-08 mw772 cfy66
Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 GaAsMMICs Broadband Amplifiers/Mixers Case C h aracteristics TA=25°C Type I op / MHz 200. 1000 800. 1800 200. 1800 200. 1800 mA V CGY50 (Amp) 5.50.7.50
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CGY50
CGY52
CGY62
OT143
CGY40
CGY21
CGY21
CSY10
CFY76-10
CFY76-08
mw772
cfy66
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