CHARACTERISTIC OF TRANSISTOR C1213 Search Results

CHARACTERISTIC OF TRANSISTOR C1213 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

CHARACTERISTIC OF TRANSISTOR C1213 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CHARACTERISTIC OF TRANSISTOR C1213 Abstract: transistor c1213 c1213 transistor transistor Rf C1213 G200 Text: PTF 10009 85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 50% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization	Original	PDF	1-877-GOLDMOS 1301-PTF CHARACTERISTIC OF TRANSISTOR C1213 transistor c1213 c1213 transistor transistor Rf C1213 G200
transistor c1213 Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 transistor Rf C1213 Text: PTF 10009 85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10009 is an 85–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. This device operates at 50% efficiency with 13 dB gain. Nitride surface passivation and full	Original	PDF	1-877-GOLDMOS 1522-PTF transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 transistor Rf C1213
atc 17-33 Abstract: transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 capacitor siemens 4700 35 atc 1733 Text: PTF 10036 85 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 10036 is an internally matched, 85 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and full gold metallization ensure	Original	PDF	1-877-GOLDMOS 1301-PTF atc 17-33 transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 capacitor siemens 4700 35 atc 1733
schematic diagram tv sony 21 trinitron Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112 Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV	Original	PDF	KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
10G EML eudyna Abstract: EML TOSA tosa Thermistor 10G EML TOSA TOSA 10G EML pcb fiber TRANSCEIVER CIRCUIT DIAGRAM rs232 EML DRIVER tosa flex cable design 0201 resistor 10 Gbps EML TOSA Text: Reference Design: HFRD-20.2 Rev. 5; 11/08 As of July, 2008 this reference design board is no longer available. Gerber files and schematics are available upon request. REFERENCE DESIGN 1310nm XFP Uncooled EML Transceiver Maxim Integrated Products Reference Design: XFP Transceiver	Original	PDF	HFRD-20 1310nm DS1862 DS3900) HFRD18 RS232 DS3900 HFRD-18 10G EML eudyna EML TOSA tosa Thermistor 10G EML TOSA TOSA 10G EML pcb fiber TRANSCEIVER CIRCUIT DIAGRAM rs232 EML DRIVER tosa flex cable design 0201 resistor 10 Gbps EML TOSA
Transistor C1173 Abstract: L1210 tyco resolver C1173 transistor transistor c929 Transistor C1173 1A Tx C1173 transistor 6ED100HP1-FA C1211 transistor C1161 Text: HybridPACK Hybrid Kit for HybridPACK™1 Evaluation Kit for Applications with HybridPACK™1 Module Application Note V2.3, 2010-10-15 System Engineering Edition 2010-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG	Original	PDF	inR214 R0402 R0603 3314J Transistor C1173 L1210 tyco resolver C1173 transistor transistor c929 Transistor C1173 1A Tx C1173 transistor 6ED100HP1-FA C1211 transistor C1161
c828 npn transistor datasheet Abstract: FS800R06KE3 c828 npn 09HVD6B-EMGF-NR TOKO CERAMIC FILTER a50 c828 TRANSISTOR equivalent c828 transistor diode in40 gp WMV smd transistor c828 transistor datasheet Text: HybridPACK Hybrid Kit for HybridPACK™2 Evaluation Kit for Applications with HybridPACK™2 Module Application Note V2.2, 2010-03 System Engineering Edition 2010-03 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG	Original	PDF	intellecR214 R0402 R0603 3314J c828 npn transistor datasheet FS800R06KE3 c828 npn 09HVD6B-EMGF-NR TOKO CERAMIC FILTER a50 c828 TRANSISTOR equivalent c828 transistor diode in40 gp WMV smd transistor c828 transistor datasheet
transistor c1419 Abstract: transistor C1162 equivalent of transistor c4751 c1162 transistor npn c1008 C1449 transistor intel 945 motherboard schematic diagram c1419 transistor c1295 battery transistor c1394 Text: Intel Xeon Processor with 512 KB L2 Cache and Intel® E7500 Chipset Platform Design Guide March 2002 Document Number: 298649-002 Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any	Original	PDF	E7500 CK408B GPIO27 GPIO28 transistor c1419 transistor C1162 equivalent of transistor c4751 c1162 transistor npn c1008 C1449 transistor intel 945 motherboard schematic diagram c1419 transistor c1295 battery transistor c1394
transistor c1213 Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 C1213 jmc 5701 Text: ERICSSON ^ PTF 10009 85 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10009 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 85 watts minimum output power. Nitride surface	OCR Scan	PDF	20AWG, transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 C1213 jmc 5701
atc 17-33 Abstract: atc 1733 860-960MHz Text: ERICSSON ^ PTF 10036 85 Watts, 860-960 MHz LDMOS Field Effect Transistor Description The 10036 is an internally matched, common source n-channel, enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 960 MHz. It is rated at 85 watts minimum output	OCR Scan	PDF
transistor c1213 Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 1606 mosfet Text: ERICSSON í PTE 10036* 85 Watts, 8 6 0 - 9 0 0 MHz L D M O S Field Effect Transistor Description The 10036 is an internally matched, common source n-channel, enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 85 watts minimum output	OCR Scan	PDF
MC789P Abstract: MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P Text: GENERAL INFORMATION Index Interchangeability Guide Digital Circuits A p p lications Selector Guide MECL M ECL M C300/M C 350 Series MECL II M C 1000/M C 1200 Series MHTL MC660 Series MTTL M T T L M C500/M C400 Series M T T L II M C2100/M C2000 Series M T T L III M C3000 Series	OCR Scan	PDF	C300/M 1000/M MC660 C500/M C2100/M C2000 C3000 930/M C200/M C900/M MC789P MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P