CHARACTERISTICS DIODE 1N4007 Search Results

Diode 1N4007 DO-7 Rectifier Diode

Abstract: 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55
Contextual Info: Diodes Rectifier and Avalanche diodes Type BY 202 BY 203 BY 204 Maximum ratings Notes Characteristics V 4 8006 90 <300 £ 1 .0 200 £ 507) Contact protection diode 2 5 1000') 200 £100 £ 1 .2 1000 £ 3503) Fast rectifier diodes 3 5 1000') 300 £100 <1.2

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N4007G DIODE GLASS PASSIVATED SILICON RECTIFIER „ DESCRIPTION The UTC 1N4007G is a glass passivated silicon rectifier, it uses UTC’s advanced technology to provide customers with high forward surge current and low reverse leakage, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N4007G DIODE GLASS PASSIVATED SILICON RECTIFIER „ DESCRIPTION The UTC 1N4007G is a glass passivated silicon rectifier, it uses UTC’s advanced technology to provide customers with high forward surge current and low reverse leakage, etc.

Contextual Info: 1N4001~1N4007 1.0A Rectifier Features 1. High current capability 2. Low reverse leakage current 3. Low forward voltage drop 4. Plastic material – UL recognition flammability classification 94V – 0 Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions

CHARACTERISTICS DIODE 1N4007

Abstract: 1N4007 DIODE 1N4001 characteristics 1N4007 OF DIODE CHARACTERISTICS DIODE 1N4006 DIODE 1N4001 VALUE OF MAX CURRENT surge current DIODE 1N4007 1N4007 rectifier diode OF 1N4001 DIODE 1N4007 marking CD
Contextual Info: 1N4001~1N4007 1.0A Rectifier Features 1. High current capability 2. Low reverse leakage current 3. Low forward voltage drop 4. Plastic material – UL recognition flammability classification 94V – 0 Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions

diode rectifier 1n4001

Abstract: NIC Components 1N4007 CHARACTERISTICS DIODE 1N4007 rating NRD4007
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250°C/10 SECONDS

1N4007 sma

Abstract: 1N4007 DO-214AC DIODE 1N4001 CHARACTERISTICS DIODE 1N4007 1N4001 SMA 1N4001 1N4007 NRD4003
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION

diode 4007 details

Abstract: 1N4007 SURFACE MOUNT Diode ttr
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION

SURFACE MOUNT SILICON RECTIFIER

Abstract: DO-214AC, SMA 1N4007
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS

1n4001 trr

Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS

DIODE 1N4007

Abstract: 1N4007 diode diode 1n4007 diotec 1N4007 BL
Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPDP-101-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF DO-41 PACKAGE Low cost SERIES 1N4001 - 1N4007 DO - 41 Low leakage

1N4007 BL

Abstract: 1N400 DIODE 1N4001 characteristics 1N4001 general diode purpose CHARACTERISTICS DIODE 1N4007 current rating diode 1N4001 1N4007 diode H2 OF 1N4001 DIODE 1n4004 bl
Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPDP-101-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF DO-41 PACKAGE Low cost SERIES 1N4001 - 1N4007 DO - 41 Low leakage

1N4007 sma

Abstract: DIODE 4004 4004 diode 1N4001 SMA SURFACE MOUNT SILICON RECTIFIER surface mount 1n4007 1N4007 DO-214AC 1N4001 1N4007 NRD4007
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION

surface mount diode w1

Abstract: 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS

surface mount 1n4007

Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPDP-101-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 1 AMP GENERAL PURPOSE SILICON DIODES MECHANICAL SPECIFICATION FEATURES SERIES 1N4001 - 1N4007 ACTUAL SIZE OF DO-41 PACKAGE

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPDP-101-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 1 AMP GENERAL PURPOSE SILICON DIODES MECHANICAL SPECIFICATION FEATURES SERIES 1N4001 - 1N4007 ACTUAL SIZE OF DO-41 PACKAGE

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPPD-100-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 1 AMP SOFT GLASS PASSIVATED SILICON DIODES MECHANICAL SPECIFICATION FEATURES SERIES 1N4001G - 1N4007G ACTUAL SIZE OF

SMD DIODE 513

Contextual Info: 1N4001.1N4007, 1N4007-1300 EM 513, EM 516, EM 518 Silicon Rectifier Silizium Gleichrichter Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse •—nax . ç/ 2-6 X _ — 5 0 .2000 V

N4001 diode

Abstract: DIODE n4007 n4007 diode diode n4001 n4004 diode n4005 N4007 N4002 diode N4003 diode 1N4001 specifications
Contextual Info: 1N4001/L-1N4007/L Vishay Lite-On Power Semiconductor ▼ 1.OARectifier Features • Diffused junction • High current capability and low forw ard voltage drop • Surge overload rating to 3 0A peak • Low reverse leakage current • Plastic m aterial - UL R ecognition flam m ability

CHARACTERISTICS DIODE 1N4007

Abstract: DIODE 1N4004 DIODE 1N4001 DIODE 1N4007 equivalent components of diode 1n4001 DIODE 1N4002 DIODE 1n4005 1N4007 DIODE data sheet 1N4007 diode 1n4007 diode datasheet
Contextual Info: 1N4001 thru 1N4007 1.0A Standard Diode Features: • • • • • Diffused Junction Low Forward Voltage Drop High Current Capability High Surge Current Capability RoHS Compliant Mechanical Data: • • • • • • Case: DO−41, Molded Plastic Terminals: Plated Leads Solderable per MIL−STD−202, Method 208

1N4007 operating frequency

Abstract: CHARACTERISTICS DIODE 1N4007 LN4007 diode ln4007 1N4007 RECTIFIER DIODE LN4004 diode DIODE 1N4001 surge current DIODE 1N4007 DIODE 1N4001 characteristics LN4004
Contextual Info: SILICON RECTIFIER DIODE ÎA/IOO— 1000V 1N4001~1N4007 FEATURES • Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability « 52mm Inside Tape Spacing Package Available MAXIMUM R A T IN G S \ Voltage Rating type

Contextual Info: SILICON RECTIFIER DIODE 1N4001— 1N4007 ia / ioo~ iooov FEATURES 2 .7 Ç 1 0 6 W 2.3C091 • Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.9 .035)nTA 0.7(.027) ° High Surge Capability 27(1.06) MIN o 52mm Inside Tape Spacing Package Available

1N4007 operating frequency

Abstract: IC 1N4007 DIODE 1N4001 RESISTANCE 1M4002 1N4001 SILICON diode 1N4007 diode frequency DIODE 1N4001 characteristics 1N4001 current rating diode 1N4001 CHARACTERISTICS DIODE 1N4007 rating
Contextual Info: SILICON RECTIFIER DIODE ia 1N4001— 1N4007 / i o o ~ io o o v FEATURES ° Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0 High Surge Capability ° 52mm Inside Tape Spacing Package Available MAXIMUM R A T IN G S "\^TYPE Voltage Rating