CHARGE-COUPLED DEVICE Search Results

RL1024D

Abstract: RL0512DAG RL0512DAG-011 RL2048DAG-011 RL0256DAG-011 rl1024dag RL0256 RL1024DAG-011
Contextual Info: D Series Linear Family J}^EG&E RETJCON Charge-Coupled Photodiode Array Introduction EG&G Reticon's D Series image sensors are high-speed, self-scanned, charge-coupled photodiode CCPD arrays. The D Series Family, consisting of the ST ANDARD-D, VALUED, FAST-D, and LOLIGHT-D image sensors, allows the

AAT3190

Abstract: BAT54S BAT54SDW
Contextual Info: PRODUCT DATASHEET AAT3190 ChargePumpTM Positive/Negative Charge Pump for Voltage Bias General Description Features The AAT3190 charge pump controller provides the regulated positive and negative voltage biases required by active matrix thin-film transistor TFT liquid-crystal displays (LCDs), charge-coupled device (CCD) sensors, and

ccd201

Abstract: CCD201ADC
Contextual Info: Fairchild Sem iconductors CCD201 -10,000 Element Self Scanning Image Sensor Sem iconductors Charge Coupled Devices B L O C K D IA G R A M G E N E R A L D E S C R IP T IO N * Th e CCD201 Is a 2-phase 10,000-element selfscanning Image sensor. It u se s charge coupled

202082A

Contextual Info: DATA SHEET AAT3190 Positive/Negative Charge Pump for Voltage Bias General Description Features The AAT3190 charge pump controller provides the regulated positive and negative voltage biases required by active matrix thin-film transistor TFT liquid-crystal displays (LCDs), charge-coupled device (CCD) sensors, and

RETICON ccd

Abstract: RETICON
Contextual Info: E G & G RETICON 1ÔE D • 3030735 0003050 4 ■ RL1282D, RL1284D, RL1288D D Series Tapped RETICON High Speed Charge-Coupled Photodiode Array EG&G Reticon's RL1282D, RL1284D and RL1288D are ultrahigh-speed, self-scanned charge-coupled linear arrays with video output taps every 128 diodes. The RL1282D has two

AAT3190

Abstract: BAT54S BAT54SDW grm39
Contextual Info: AAT3190 Positive/Negative Charge Pump for Voltage Bias General Description Features The AAT3190 charge pump controller provides the regulated positive and negative voltage biases required by active matrix thin-film transistor TFT liquid-crystal displays (LCDs), charge-coupled

RETICON

Abstract: RETICON CCD RETICON photodiode array 512 Reticon photodiode array 1024 pixel RL1288DAQ-011 Reticon 256 reticon photodiode array RC07 RL1282D RL1288D
Contextual Info: E G & G RETICON 1ÔE D • 3030735 0003050 4 ■ RL1282D, RL1284D, RL1288D D Series Tapped RETICON High Speed Charge-Coupled Photodiode Array EG&G Reticon's RL1282D, RL1284D and RL1288D are ultrahigh-speed, self-scanned charge-coupled linear arrays with video output taps every 128 diodes. The RL1282D has two

Contextual Info: h J ' ^ E B k G D Series Tapped r e t t c o High Speed Charge-Coupled Photodiode Array n RL1282D Introduction EG&G Reticon’s RL1282D, RL1284D and RL1288D are ultrahigh-speed, self-scanned charge-coupled linear arrays with video output taps every 126 diodes. The RL1282D has two

AAT3190

Abstract: BAT54S BAT54SDW EMK107BJ104MA JMK212BJ475MG EMK107BJ104MA 0.1uf 16 V X5R 602K grm39 TSOPJW-12
Contextual Info: AAT3190 Positive/Negative Charge Pump for Voltage Bias General Description Features The AAT3190 charge pump controller provides the regulated positive and negative voltage biases required by active matrix thin-film transistor TFT liquid-crystal displays (LCDs), charge-coupled

RL2048dag

Abstract: RETICON RL 1024 STR 6656 RETICON RL0512DAG011 RL0512DKQ RL0512DAG RL2048DAG011 rl1024dag RL1024DAG-011
Contextual Info: m T T 'r /V M l ¥ E T CI O N PI J ^ E G z G D Series Linear Family R Charge-Coupled Photodiode Array Introduction _ EG&G Reticon’s D Series image sensors are high-speed, self-scanned, charge-coupled photodiode CCPD arrays. The D Series Family, consisting of the STANDARD-D, VALU E­

CCD211

Abstract: CCD131 simple block diagram for digital clock CCD linear array matrix CCD driver circuit for camera ir module CCD matrix CCD110F linear CCD 512 CCD202
Contextual Info: FAIRCHILD CHARGE-COUPLED DEVICES CCD LINEAR IMAGE SENSORS A typical linear image sensor is composed of a row of ima;ge sensing elements photosites , two analog transport registers, and an output am plifier (Figure 1). Light energy falls on the photosites and generates charge packets

Contextual Info: PRODUCT DATASHEET AAT3190 ChargePumpTM Positive/Negative Charge Pump for Voltage Bias Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT3190 charge pump controller provides the regulated positive and negative voltage biases required by active matrix thin-film transistor TFT liquid-crystal displays (LCDs), charge-coupled device (CCD) sensors, and

ed 77A DIODE

Abstract: APT50M50JLC 77A DIODE ed 77A
Contextual Info: APT50M50JLC 77A 0.050 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

APT5010JLC

Contextual Info: APT5010JLC 44A 0.100 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

APT10050JLC

Contextual Info: APT10050JLC 1000V POWER MOS VITM S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

APT10025JLC

Contextual Info: APT10025JLC 1000V 34A POWER MOS VITM S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

APT10050JLC

Abstract: APT10050JL
Contextual Info: APT10050JLC 1000V 19A POWER MOS VITM S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

TO-247 Package

Contextual Info: APT5020BLC 500V 26A 0.200 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

APT5015BLC

Contextual Info: APT5015BLC 500V 32A 0.150 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

APT50M80JLC

Contextual Info: APT50M80JLC 52A 0.080 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

ed 77A DIODE

Abstract: APT50M50JLC
Contextual Info: APT50M50JLC 77A 0.050 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

APT50M80JLC

Abstract: 52AJ C25-C34
Contextual Info: APT50M80JLC 52A 0.080 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

capacitor value calculation

Abstract: line follower sensor wm8224 Date Code wolfson voltage follower cis sensor EH11 capacitor value calculation for AC what is a cds sensor Digital line follower sensor
Contextual Info: w WAN_0224 WM8224 DC Drift Using Voltage Follower INTRODUCTION The WM8224 is an analogue front end AFE digitiser that can be used with CCD (Charge Coupled Device) or CIS (Contact Image Sensor) sensors to capture the analogue video signal for digital processing. The sensor output signal can be ac or dc coupled to the WM8224.

transistor bc 102

Abstract: APT5010B2LC
Contextual Info: APT5010B2LC 500V 47A 0.100 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,