CHEMI-CON MV SERIES Search Results

Contextual Info: M O U N T -85°C MVBP Series SURFACE MV UNITED CHEMI-CON • Surface Mount ■ Bi-Polar ■ Low Profile Vertical Chip ■ Solvent Proof ■ +85°C Maximum Temperature The MVBP series are the bi-polar versions of the MV series. These surface mount capacitors are

Contextual Info: UNITED CHEMI-CON f t / l V Series •Surface Mount ■Low Profile Vertical Chip ■Solvent Proof ■+85°C Maximum Temperature A ctual ‘ - -r - - r s . : “• i 'S'i:-:':; S ’": Kp The MV series capacitors are the standard vertical chip capacitors designed for reflow soldering.

Contextual Info: P34TG-xxxxE/Z2:1MLF PMD-SERIES Rev.11-2008 8 Watt Regulated Single and Dual Output 1.5 kV DC I/O Isolation DIP24 Metal Case Continuous Short Circuit Prot. Full SMD Technology Mainzer Straße 151–153 D-55299 Nackenheim Tel. +49 6135 7026-0 Fax: +49 6135 931070

Contextual Info: P44TG-xxxxE/Z4:1MLF PMV-SERIES Rev.02-2009 12 Watt, 4:1 Ultra Wide Input DIP24 Metal Case 1.5 kV DC I/O Isolation Single and Dual Reg. Output Continuous Short Circuit Prot. Over Voltage/Load Protection Soft Start, Remote Ctrl. Mainzer Straße 151–153 D-55299 Nackenheim

628k

Abstract: Panasonic Electrolytic Capacitor EEUFC1H681 sprague capacitor 470uF 25V
Contextual Info: PT6340 Series 6 Amp 12V Input Adjustable Integrated Switching Regulator SLTS138 Revised 1/24/2001 Features Description • 6 Amp Output Current • Input Voltage Range: 10.8V to 13.2V • 90% Efficiency • Excellent Thermal Properties • Temp Range: –40 to +85°C

J698

Abstract: NIPPON CAPACITORS Chemi-Con DATE CODES A114 A115 AN1955 C101 JESD22 MRFE6P9220HR3 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6P9220H Rev. 0, 1/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6P9220H Rev. 0, 1/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

0119A

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev. 0, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19200HR3 MRF6S19200HSR3 Designed for CDMA base station applications with frequencies from 1930 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21190H Rev. 1, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21190HR3 MRF6S21190HSR3 Designed for W - CDMA base station applications with frequencies from 2110

NIPPON CAPACITORS

Abstract: MRF6S19200H MRF6S19200HSR3 A114 A115 AN1955 C101 JESD22 MRF6S19200HR3 ATC100B100CT500XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev. 0, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19200HR3 MRF6S19200HSR3 Designed for CDMA base station applications with frequencies from 1930 to

NIPPON CAPACITORS

Abstract: p 150 54 465B A114 A115 AN1955 JESD22 MRF6S21190H MRF6S21190HR3 MRF6S21190HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21190H Rev. 1, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21190HR3 MRF6S21190HSR3 Designed for W - CDMA base station applications with frequencies from 2110

j6808

Abstract: A114 A115 AN1955 C101 JESD22 MRF6S27050HR3 MRF6S27050HSR3 J7-73 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 0, 11/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to

EMVY250ADA

Abstract: GPS-1830 465B A114 A115 AN1955 JESD22 MRFE6S9135HR3 MRFE6S9135HSR3 CRCW12062201FKEA
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9135H Rev. 1, 11/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9135HR3 MRFE6S9135HSR3 Designed for broadband commercial and industrial applications with

465B

Abstract: A114 A115 AN1955 JESD22 MRFE6S9205HR3 MRFE6S9205HSR3 EKME630ELL471MK255 Nippon capacitors Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9205H Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9205HR3 MRFE6S9205HSR3 Designed for broadband commercial and industrial applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9205H Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9205HR3 MRFE6S9205HSR3 Designed for broadband commercial and industrial applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9135H Rev. 1, 11/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9135HR3 MRFE6S9135HSR3 Designed for broadband commercial and industrial applications with

sfh817a

Abstract: 1n4007 sod123 D217 OPTO NCP1397 RECTIFIER DIODE D100 diode zd201 opto d206 NCP1252 zener diode 1206 6v8 schematic diagram lcd tv sharp inverter
Contextual Info: TND401/D Rev. 2, September 2010 300 W High Performance SLIM LCD TV Power Solution Jean-Paul Louvel LCD TV System Applications 2010 ON Semiconductor Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated

MRF5S4140H

Contextual Info: Document Number: MRF5S4140H Rev. 0, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these

C8450

Abstract: MRF5S4140H
Contextual Info: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these

J0743

Abstract: MRF5S4140H j0810 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HR3
Contextual Info: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these

j633

Abstract: Chemi-Con DATE CODES 465B A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 w1760
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 Designed for N- CDMA base station applications with frequencies from 1805

j1303

Abstract: CRCW12061001F100 465B A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 j2479
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 0, 9/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 Designed for N- CDMA base station applications with frequencies from 1805

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to