CHIP 66 LOW NOISE AMPLIFIER Search Results

nec ne3

Abstract: NE32500 NE32500M NE32500N
Contextual Info: C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP FEATURES NE32500 OUTLINE DIMENSIONS Units in µm • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz CHIP • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz 58 5.5 36.5 13 66 25 13 • GATE LENGTH: LG = 0.20 µm

NE27200

Contextual Info: C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP FEATURES NE27200 OUTLINE DIMENSIONS Units in µm • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz CHIP • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz 58 5.5 36.5 13 66 25 13 µm • GATE LENGTH: LG = 0.20 µ

NE27200

Abstract: FC 0137 NEC Ga FET
Contextual Info: C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP FEATURES NE27200 OUTLINE DIMENSIONS Units in µm • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz CHIP • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz 58 5.5 36.5 13 66 25 13 µm • GATE LENGTH: LG = 0.20 µ

NE32500M

Abstract: NE3250 ka band power fet NE32500 NE32500N nf 27
Contextual Info: NEC's C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP FEATURES NE32500 OUTLINE DIMENSIONS Units in µm • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz CHIP • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz 58 5.5 36.5 13 66 25 13 µm • GATE LENGTH: LG = 0.20 µ

HMC-ALH369

Contextual Info: HMC-ALH369 v00.1007 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Typical Applications Features This HMC-ALH369 is ideal for: Excellent Noise Figure: 2.0 dB • Point-to-Point Radios Gain: 22 dB • Point-to-Multi-Point Radios

Contextual Info: HMC462 v01.0412 Amplifiers - Low Noise Amplifiers - Chip GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Typical Applications Features The HMC462 is ideal for: Noise Figure: 2 dB • Test Instrumentation Gain: 15 dB • Microwave Radio & VSAT P1dB +15.5 dBm

Contextual Info: HMC462 v01.0412 AMPLIFIERS - LOW NOISE AMPLIFIERS - CHIP GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Typical Applications Features The HMC462 is ideal for: Noise Figure: 2 dB • Test Instrumentation Gain: 15 dB • Microwave Radio & VSAT P1dB +15.5 dBm

Contextual Info: HMC-ALH369 v03.0709 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Typical Applications Features This HMC-ALH369 is ideal for: Excellent Noise Figure: 2 dB • Point-to-Point Radios Gain: 22 dB • Point-to-Multi-Point Radios

HMC-ALH369

Abstract: 9DB11 chip 66 low noise amplifier mmic 137
Contextual Info: HMC-ALH369 AMPLIFIERS - LOW NOISE - CHIP v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Typical Applications Features This HMC-ALH369 is ideal for: Excellent Noise Figure: 2.0 dB • Point-to-Point Radios Gain: 22 dB • Point-to-Multi-Point Radios

HMC-ALH369

Contextual Info: HMC-ALH369 v02.0209 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Typical Applications Features This HMC-ALH369 is ideal for: Excellent Noise Figure: 2 dB • Point-to-Point Radios Gain: 22 dB • Point-to-Multi-Point Radios

HMC-ALH369

Contextual Info: HMC-ALH369 v03.0709 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Typical Applications Features This HMC-ALH369 is ideal for: Excellent Noise Figure: 2 dB • Point-to-Point Radios Gain: 22 dB • Point-to-Multi-Point Radios

Contextual Info: HMC-ALH369 v01.1207 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Typical Applications Features This HMC-ALH369 is ideal for: Excellent Noise Figure: 2 dB • Point-to-Point Radios Gain: 22 dB • Point-to-Multi-Point Radios

Contextual Info: MA4T243 Series M/A-COM Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip Available in Hermetic Surface Mount Packages

B52 transistor

Contextual Info: Thal mLUM HEWLETT PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High Output Power: mixer and oscillator applications 21.0 dBm Typical Pj iB at 2.0 GHz

low noise, hetero junction fet

Abstract: high frequency transistor ga as fet NE27200 s11 diode shottky NE32500 nec, hetero junction transistor GA 88 KA 88
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable

transistor 86 y 87

Abstract: eic 57 210 17bs2 AT-42000 AT-42000-GP4 pj 68 S2a
Contextual Info: « Thai minM HP AECWKLAERTDT Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High O utput Power: 21.0 dBm Typical Pj dB at 2.0 GHz m ixer and oscillator applications

Contextual Info: O avantek MGA-62100 Low Noise GaAs MMIC Amplifier Avantek Chip Outline Features • • • • • Output Matched 2 Stage FET Cascade Broadband Performance: 2 -1 4 GHz Low Noise Figure 50 £2 : 2.5 dB typical at 4 GHz 5.0 dB typical at 14 GHz 8.5 dB typical Gain at 14 GHz

Contextual Info: HMC462 v01.0907 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC462 Wideband LNA is ideal for: Noise Figure: 2 dB @ 10 GHz • Telecom Infrastructure Gain: 15 dB • Microwave Radio & VSAT

HMC462

Abstract: HMC463
Contextual Info: HMC462 v02.0708 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC462 Wideband LNA is ideal for: Noise Figure: 2 dB @ 10 GHz • Telecom Infrastructure Gain: 15 dB • Microwave Radio & VSAT

Contextual Info: |\|EC SUPER LOW NOISE C TO KA BAND AMPLIFIER NE27200 N-CHANNEL HJ FET CHIP FEATURES_ OUTLINE DIMENSIONS Units in nm • SUPER LOW NOISE FIGURE: 0.45 d B T Y P a t 12 GHz CHIP • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz • GATE LENGTH: Lg = 0.20 nm

HMC392

Abstract: ps3 schematic
Contextual Info: HMC392 v02.0907 LOW NOISE AMPLIFIERS - CHIP 1 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz Typical Applications Features The HMC392 is ideal for: Gain: 15.5 dB • Point-to-Point Radios Noise Figure: 2.4 dB • VSAT Single Supply Voltage: +5V 50 Ohm Matched Input/Output

HMC462

Abstract: HMC463
Contextual Info: HMC462 v02.0708 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC462 Wideband LNA is ideal for: Noise Figure: 2 dB @ 10 GHz • Telecom Infrastructure Gain: 15 dB • Microwave Radio & VSAT

1A12 nec

Contextual Info: | \ | E C C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP FEATURES_ NE32500 OUTLINE DIMENSIONS Units in |im • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz CHIP • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz • GATE LENGTH: Lg = 0.20 nm

Contextual Info: HMC392 v02.0907 LOW NOISE AMPLIFIERS - CHIP 1 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz Typical Applications Features The HMC392 is ideal for: Gain: 15.5 dB • Point-to-Point Radios Noise Figure: 2.4 dB • VSAT Single Supply Voltage: +5 V 50 Ohm Matched Input/Output