CHIP DIAGRAM OF RAM CHIP 6116 Search Results

chip diagram of ram chip 6116

Abstract: ci 6116 RAM 6116
Contextual Info: SGS-THOMSON KLH Tr[^© iìOa©S M K 6116 MK6116, MKI6116, MK6116L, MKI6116L (N/S - 15/20/25 2 K X 8 CMOS STATIC RAM • BYTEWYDE 2K x 8 CMOS STATIC RAM. .« lili ■ +5 VOLT ONLY WRITE/READ. ■ HIGH PERFORMANCE WITH LOW CMOS STANDBY POWER. PIN NAMES

RAM MK6116

Abstract: MK6116-15 6116 ram 2k MK6116-25 DIP-24 MK6116 FZJ 105
Contextual Info: SGS-THOMSON M K 6116 M MK6116, MKI6116, MK6116L, MKI6116L N/S - 15/20/25 2 K X 8 C M O S STATIC RAM i BYTEWYDE 2K x 8 CM OS STATIC RAM. £.j U i +5 VOLT ONLY WRITE/READ. i 24-PIN 600 MIL PLASTIC DIP, JEDEC PINOUT 28-PIN 330 MIL SOIC. i EQUAL W RITE AND READ CYCLE TIMES.

S4-144

Abstract: IC cs 4852 T6116 6116LA25
Contextual Info: CMOS STATIC RAM 16K 2Kx 8-BIT (*/ integrated Devte Technology Inc IDT 6116SA IDT 6116LA FEATURES: DESCRIPTION: • O p tim ize d for fast RISC proce sso rs in clu d in g the IDT79R3000 • H igh-speed T h e ID T6116SA /LA is a 16,384-blt h ig h -sp ee d static RAM or­

6116 RAM

Abstract: ci 6116 ram 6116 6116 chip diagram of ram chip 6116 6116 static ram Matra-Harris Semiconductor 6116 CMOS RAM RAM type 6116 6116L
Contextual Info: MHS lllll AIATRA-HARRIS SEMICONDUCTOR HM 6116/6116 L 2K x 8 CMOS STATIC RAM MAY 1986 Features • MILITARY/INDUSTRIAL : FAST ACCESS TIME : 120 ns • ASYNCHRONOUS • STAND BY CURRENT : 100 pA max • OPERATING SUPPLY CURRENT : 60 mA max • BATTERY BACK UP OPERATION : 2V mln - SO jiA max

82C307

Abstract: 82385 80386 cache 79R3000 UM61166 UM61166-25 UM61166L 82c307 cache controller 80386 intel cache controller
Contextual Info: UNICORN MICROELECTRONICS E4E D =1270700 □□□115b 5 r - w Ü M - z z - i o . U M 61166 Series O 4KX16 CMOS CACHE RAM P R E L IM IN A R Y Features Common I/O using three-state output Direct interface with Intel cache controller 82385 or IDT 79R3000 RISC CPU or C & T cache controller

6116 block diagram

Contextual Info: Irillll I V i l l l September 1989 HM 6116 DATA SHEET_ 2kx8 GENERAL PURPOSE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE RANGE : - 55 TO + 125 C

6116 RAM

Abstract: 6116 6116 static ram SRAM 6116 ram 6116 6116 memory HM6116 6116 sram 6116 CMOS RAM decoder 6116
Contextual Info: Illiïü HM 6116 DATA SHEET_ 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES ACCESS TIME COMMERCIAL : 120 NS MAX INDUSTRIAL : 120 NS (MAX) MILITARY : 120 NS (MAX) VERY LOW POWER CONSUMPTION ACTIVE : 240 mW (TYP) STANDBY : 2.0 nW (TYP) DATA RETENTION : 4 fiW (TYP)

Contextual Info: March 1994 HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES . . ACCESS TIME COMMERCIAL : 120 NS MAX INDUSTRIAL : 120 NS (MAX) MILITARY .120 NS (MAX) VERY LOW POWER CONSUMPTION ACTIVE : 240 mW (TYP) STANDBY: 2.0 (xW (TYP) DATA RETENTION : 4 (TYP)

Contextual Info: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2Kx 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 iim Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad Si02

chip diagram of ram chip 6116

Abstract: m2011 bond pull M2019 M2010 M2011 S102 marking RAD
Contextual Info: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 |xm Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad SiOz

IDT6116LA

Abstract: IDT6116SA SO24-2
Contextual Info: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)

S0244

Abstract: S024-4 HA 3089 ram 6116 2k*8
Contextual Info: CMOS STATIC RAM 16K 2Kx8 BIT IDT6116SA IDT6116LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed access and chip select times — Military: 20/25/35/45/55/70/90/120/150ns (max.) — Commercial: 15/20/25/35/45ns (max.) • Low-power consumption

6116 CMOS RAM

Abstract: 6116LA45 6116 ram 2k
Contextual Info: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)

6116LA55

Contextual Info: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)

6116LA45

Abstract: 6116LA120 chip diagram of ram chip 6116 6116LA25 6116 static RAM chip IDT6116SA/LA 6116 static RAM 150ns 6116 memory DIP-24 IDT6116LA
Contextual Info: CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT6116SA IDT6116LA Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)

6116 CMOS RAM

Abstract: 6116LA45 IDT6116SA/LA IDT6116LA IDT6116SA SO24-2 IDT 6116 memory chip
Contextual Info: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)

Contextual Info: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)

Contextual Info: SGS-THOMSON M 0 » I L » m TJÌ MK6116, MKI6116, MK6116L, MKI6116L N/S -15/20/25 2K x 8 CMOS STATIC RAM Data Sheet a BYTEWYDE 2K X 8 CMOS STATIC RAM □ 45 VOLT ONLY WRITE/READ □ 24-PIN 600 MIL PLASTIC DIP, JEDEC PINOUT 28-PIN 330 MIL SOIC □ EQUAL WRITE AND READ CYCLE TIMES

6116LA45

Abstract: IDT6116LA IDT6116SA SO24-2
Contextual Info: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)

6116L-70

Abstract: Syvantek Microelectronics 6116 RAM 6116 CMOS RAM 6116-70 R6116 RAM type 6116 2Kx8 2 cs SYC6116L-70 6116-45
Contextual Info: MAR 2 2 SY C6116-45/S Y C6116-70/S Y C6116-90 SYC6116L-45/S Y C6116L-70/S Y C6116L-90 CMOS STATIC RAM — 16K 2KX8-BIT SYVANTEK Features: • Low Power Dissipation Operating: 200mW (typ.), Standby: 5(iW (typ.) High Speed Access Time: 45ns/70ns/90ns Single 5V (±10%) Power Supply

6116 ram

Abstract: memory 6116 6116 ram 2k 24-Pin Plastic DIP 6116 series Static RAMs 6116 static ram CY6116 ram 6116 6116 memory chip L6116CC15
Contextual Info: L6116 L6116 DEVICES INCORPORATED 2K x 8 Static RAM Low Power 2K x 8 Static RAM (Low Power) DEVICES INCORPORATED FEATURES DESCRIPTION q 2K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 15 ns maximum

6116LA45

Abstract: IDT6116LA IDT6116SA SO24-2 D242
Contextual Info: IDT6116SA IDT6116LA CMOS STATIC RAM 16K 2K x 8 BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed access and chip select times — Military: 20/25/35/45/55/70/90/120/150ns (max.) — Commercial: 15/20/25/35/45ns (max.) • Low-power consumption

6116 ram

Abstract: 6116 ram 2k memory 6116 6116 static RAM chip L6116M chip diagram of ram chip 6116
Contextual Info: L6116 L6116 DEVICES INCORPORATED 2K x 8 Static RAM Low Power 2K x 8 Static RAM (Low Power) DEVICES INCORPORATED DESCRIPTION ROW SELECT 7 O ROW ADDRESS Two standby modes are available. Proprietary Auto-Powerdown circuitry reduces power consumption automatically during read or write

6116LA

Abstract: 6116LA45 IDT6116LA IDT6116SA 6116 CMOS RAM
Contextual Info: IDT6116SA IDT6116LA CMOS STATIC RAM 16K 2K x 8 BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed access and chip select times — Military: 20/25/35/45/55/70/90/120/150ns (max.) — Commercial: 15/20/25/35/45ns (max.) • Low-power consumption