CHIP DIE HP Search Results

PT 2102 ic

Abstract: HXTR-41Q1 HXTR-4101TXV 2N6679 HPAC-70GT HXTR-2101 HXTR-4101 hxtr-6105 6105tx BV EI 302 2003
Contextual Info: H E W L E T T - P A C K A R D n CMPNTS EOE D £3 44475Û4 m General Purpose Transistors HXTR-2001 Chip Technical Data Features ^ k laert ; LJ Generic Chip HXTR-2001 Recommended Die Attach and Bonding Procedures Eutectic Die Attach at a stage temperature of 410 ± 10°C under

C505C

Abstract: KABEL KOMPLETT STK 641 DS301 stk 402 STK IC MM-214
Contextual Info: CANopen-Chip System-Manual Ausgabe Februar 2001 Ein Produkt eines Unternehmens der PHYTEC Technologie Holding AG CANopen-Chip Im Buch verwendete Bezeichnungen für Erzeugnisse, die zugleich ein eingetragenes Warenzeichen darstellen, wurden nicht besonders gekennzeichnet. Das

STK 641

Abstract: C505C DS301 STK IC dipsw_4 CIA DSP 402 STK 6
Contextual Info: CANopen-Chip System-Manual Ausgabe Februar 2000 Ein Produkt eines Unternehmens der PHYTEC Technologie Holding AG CANopen-Chip Im Buch verwendete Bezeichnungen für Erzeugnisse, die zugleich ein eingetragenes Warenzeichen darstellen, wurden nicht besonders gekennzeichnet. Das

Contextual Info: HV7022-C 34-Channel Symmetric Row Driver Ordering Information Package Options Device 44 J-Lead Quad Ceramic Chip Carrier 44 J-Lead Quad Plastic Chip Carrier Die in waffle pack 44 J-Lead Quad Ceramic Chip Carrier MIL-Std-883 Processed* HV7022-C HV7022DJ-C

H2257

Contextual Info: H2257H06A5B Vishay High Power Products HEXFREDTM Die in Wafer Form PRODUCT SUMMARY VF 1.2 V maximum VBR 600 V Wafer 5" FEATURES RoHS • 100 % tested at probe COMPLIANT • Available in tape and reel upon request • Chip pack, and sawn on film (part number shown is for die

78L05TO-92

Abstract: 74XX574 IEC1131-3 74xx138 C505C C540U C541U DO15 IEC1131-SPS-Chip sps_chip
Contextual Info: Systemhandbuch IEC1131-SPS-Chip Kurzübersicht Ausgabe März 1999 Ein Produkt eines Unternehmens der PHYTEC Technologie Holding AG IEC1131-SPS-Chip Im Buch verwendete Bezeichnungen für Erzeugnisse, die zugleich ein eingetragenes Warenzeichen darstellen, wurden nicht besonders gekennzeichnet. Das

Contextual Info: H2085H06A5B Vishay High Power Products HEXFREDTM Die in Wafer Form PRODUCT SUMMARY VF 1.7 V maximum VBR 600 V Wafer 5" FEATURES RoHS • 100 % tested at probe COMPLIANT • Available in tape and reel upon request • Chip pack, and sawn on film (part number shown is for die

93905

Abstract: HFA08TB60 equivalent
Contextual Info: H2090H06A5B Vishay High Power Products HEXFREDTM Die in Wafer Form PRODUCT SUMMARY VF 1.7 V maximum VBR 600 V Wafer 5" FEATURES RoHS • 100 % tested at probe COMPLIANT • Available in tape and reel upon request • Chip pack, and sawn on film (part number shown is for die

Contextual Info: H2195H06A5B Vishay High Power Products HEXFREDTM Die in Wafer Form PRODUCT SUMMARY VF 1.2 V maximum VBR 600 V Wafer 5" FEATURES RoHS • 100 % tested at probe COMPLIANT • Available in tape and reel upon request • Chip pack, and sawn on film (part number shown is for die

Contextual Info: H2115H06A5B Vishay High Power Products HEXFREDTM Die in Wafer Form PRODUCT SUMMARY VF 1.7 V maximum VBR 600 V Wafer 5" FEATURES RoHS • 100 % tested at probe COMPLIANT • Available in tape and reel upon request • Chip pack, and sawn on film (part number shown is for die

Contextual Info: H2066H06A5B Vishay High Power Products HEXFREDTM Die in Wafer Form PRODUCT SUMMARY VF 1.8 V maximum VBR 600 V Wafer 5" FEATURES RoHS • 100 % tested at probe COMPLIANT • Available in tape and reel upon request • Chip pack, and sawn on film (part number shown is for die

HV09

Contextual Info: H V09 Lji Supertex inc. Product Objective Specification 32-Channel Symmetric Row Drivers Ordering Information Package Options * Device 44 J-Lead Quad Ceramic Chip Carrier 44 J-Lead Quad Plastic Chip Carrier Die in waffle pack 44 - Lead Ceramic J-Bend MIL-STD-883 Processed"

LL HP

Abstract: chip die hp SOT 23 Package equivalent
Contextual Info: Linear Models for Diode Surface Mount Packages Application Note 1124 Introduction When linear or non-linear analyses are performed on diode circuits, both the diode chip and its package must be accurately modeled. The diode chip or die itself may be modeled using SPICE parameters,

ARSA

Abstract: 2C3741 2C3767
Contextual Info: 4-A PNP Power Transistor Chips 2C3741 FEATURES CHIP TYPE: AP • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 30,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness - 10 Mils Nominal • Complement to NPN 2C3767

inductive proximity sensor transistor schematic

Abstract: DD 127 D TRANSISTOR SMBus programmable
Contextual Info: THMC10 REMOTE/LOCAL TEMPERATURE MONITOR WITH SMBus INTERFACE SLIS089 – DECEMBER 1999 D D D D D D D Two-Wire SMBus Serial Interface On-Chip and External Diode-Connected Transistor Temperature Monitoring – ±2.5°C Accuracy for On-Die – ±3°C Accuracy for External

2N3904

Abstract: 2N3906 HP8116A MO-137 SLIS089 THMC10 temperature monitor
Contextual Info: THMC10 REMOTE/LOCAL TEMPERATURE MONITOR WITH SMBus INTERFACE SLIS089 − DECEMBER 1999 D Two-Wire SMBus Serial Interface D On-Chip and External Diode-Connected D D D D D Transistor Temperature Monitoring − ±2.5°C Accuracy for On-Die − ±3°C Accuracy for External

Contextual Info: THMC10 REMOTE/LOCAL TEMPERATURE MONITOR WITH SMBus INTERFACE SLIS089 – DECEMBER 1999 D D D D D D D Two-Wire SMBus Serial Interface On-Chip and External Diode-Connected Transistor Temperature Monitoring – ±2.5°C Accuracy for On-Die – ±3°C Accuracy for External

Contextual Info: THMC10 REMOTE/LOCAL TEMPERATURE MONITOR WITH SMBus INTERFACE SLIS089 − DECEMBER 1999 D Two-Wire SMBus Serial Interface D On-Chip and External Diode-Connected D D D D D Transistor Temperature Monitoring − ±2.5°C Accuracy for On-Die − ±3°C Accuracy for External

HP8116A

Abstract: inductive proximity sensor transistor schematic DD 127 D TRANSISTOR SMBus programmable THMC10 2N3904 2N3906 MO-137 SLIS089
Contextual Info: THMC10 REMOTE/LOCAL TEMPERATURE MONITOR WITH SMBus INTERFACE SLIS089 – DECEMBER 1999 D D D D D D D Two-Wire SMBus Serial Interface On-Chip and External Diode-Connected Transistor Temperature Monitoring – ±2.5°C Accuracy for On-Die – ±3°C Accuracy for External

Contextual Info: THMC10 REMOTE/LOCAL TEMPERATURE MONITOR WITH SMBus INTERFACE SLIS089 – DECEMBER 1999 D D D D D D D Two-Wire SMBus Serial Interface On-Chip and External Diode-Connected Transistor Temperature Monitoring – ±2.5°C Accuracy for On-Die – ±3°C Accuracy for External

Contextual Info: MPY100 B U R R -B R O W N * E 1 MI L I TARY & DIE VERSIONS AVAILABLE MULTIPLIER-DIVIDER FEATURES A P P LIC A T IO N S LOW COST DIFFERENTIAL INPUT ACCURACY 100% TESTED AND GUARANTEED NO EXTERNAL TRIMMING REQUIRED LOW NOISE 90pV. rmi, 10Hz I* 10kHz HIGHLY RELIABLE ONE-CHIP DESIGN

MEDICAL PRESSURE die

Abstract: OEM PRESSURE SILICON DIE ANALOG MICROELECTRONICS AM5102-060-G low PRESSURE die TEMPERATURE OEM 22
Contextual Info: OEM PRESSURE SILICON DIE AM 5102 FEATURES GENERAL DESCRIPTION • Low Cost • Gage and Absolute Versions • Constant Current or Constant Voltage Drive • Millivolt Output • 5, 15, 30, 60, 100 and 300 PSI Ranges Available The AM 5102 is a silicon micromachined pressure sensing chip. The implanted piezoresistive structure forms a half–open Wheastone

SM 6185

Abstract: MSA0886 MSA-1104 200 mil BeO package GHZ micro-X Package INA-52063 msa-0504 MSA-0670 INA-01100 sot 326
Contextual Info: RFIC and MMIC Amplifiers Selection Guides Fixed Gain RFIC Amplifiers in order from lowest to highest frequency Part Number Type MSA-2111 MSA-3111 MSA-3135 MSA-3185 MSA-3186 INA-01100 INA-01170 HPMX-3002 INA-02100 INA-02170 INA-02184 INA-02186 MSA-0600 MSA-0611

sm 34063

Abstract: MMIC SOT 363 MSA-0835 MMIC sot-363 msa0304 INA-01170 msa-0686 INA-0218 ina-02170 MSA-1110
Contextual Info: RFIC and MMIC Amplifiers Selection Guides Fixed Gain RFIC Amplifiers in order from lowest to highest frequency Part Number MSA-2111 MSA-3111 MSA-3135 MSA-3185 MSA-3186 INA-01170 HPMX-3002 INA-02170 INA-02184 INA-02186 MSA-0611 MSA-0635 MSA-0636 MSA-0670