CHIP DIE NPN TRANSISTOR Search Results

CHIP DIE NPN TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
GCM32ED70J476KE02K	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for Automotive
GRM022R61A104ME05L	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose
GRM033D70J224KE01W	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose
GRM155R61H334KE01D	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose
GRM2195C2A273JE01D	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose

CHIP DIE NPN TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TECHNICAL DATA .023F GEOMETRY SURFACE MOUNT NPN SMALL SIGNAL TRANSISTOR DIE NES4401C SURFACE MOUNT NPN SMALL-SIGNAL TRANSISTOR DIE 1. Chip size.… 23 x 23 mils ± 2 mils 2. Chip thickness.… 10 ? 1.5 mils	Original	NES4401C	PDF
chip die npn transistor Contextual Info: Back to Bipolar Small Signal TECHNICAL DATA .023F GEOMETRY SURFACE MOUNT NPN SMALL SIGNAL TRANSISTOR DIE NES4401C SURFACE MOUNT NPN SMALL-SIGNAL TRANSISTOR DIE 1. Chip size.… 23 x 23 mils ± 2 mils 2. Chip thickness.… 10 ? 1.5 mils	Original	NES4401C chip die npn transistor	PDF
transistor equivalent CT 2n5551 Abstract: CP316V-2N5551-CT 2N5832 CMLT5551 CMLT5554 CMPT5551 CMPT5551E CMUT5551 CP316V 2n5551 Contextual Info: PCN #: 118 Notification Date: 19 October 2010 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Product / Process Change Notice Parts Affected: Chip process CP316V, NPN high voltage transistors, wafers, and die in chip form. Extent of Change:	Original	CP316V, CP316V CP336V CP316V-2N5551-CTAN CP316V-2N5551-CT CP316V-2N5551-WN CMLT5551 CMLT5554 CMPT5551 CMPT5551E transistor equivalent CT 2n5551 CP316V-2N5551-CT 2N5832 CMLT5551 CMLT5554 CMPT5551 CMPT5551E CMUT5551 2n5551	PDF
transistor 2N3725 Abstract: 2N3725 2N3725A CP215 MPQ3725 MPQ3725A Contextual Info: Central PROCESS TM CP215 Small Signal Transistors Semiconductor Corp. NPN - Saturated Switch Transistor Chip PROCESS DETAILS PROCESS EPITAXIAL PLANAR DIE SIZE 21 x 21 MILS DIE THICKNESS 9.0 MILS BASE BONDING PAD AREA 4.3 x 4.3 MILS EMITTER BONDING PAD AREA	Original	CP215 2N3725 2N3725A MPQ3725 MPQ3725A transistor 2N3725 2N3725 2N3725A CP215 MPQ3725 MPQ3725A	PDF
SILICON TRANSISTOR CORP Abstract: transistor CHIP TRANSISTOR CP307 ny transistor ELECTRONIC TRANSISTOR CORP equivalent mpsa14 mpsa14 MPSa14 equivalent 2N6426 Contextual Info: PROCESS CP307 Central Small Signal Transistor TM Semiconductor Corp. NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area	Original	CP307 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CXTA14 CZTA14 MPSA13 MPSA14 SILICON TRANSISTOR CORP transistor CHIP TRANSISTOR CP307 ny transistor ELECTRONIC TRANSISTOR CORP equivalent mpsa14 mpsa14 MPSa14 equivalent 2N6426	PDF
MPSA13 Abstract: MPSA14 SILICON TRANSISTOR CORP 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CP307 CXTA14 Contextual Info: Central TM Semiconductor Corp. PROCESS CP307 Small Signal Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area	Original	CP307 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CXTA14 CZTA14 MPSA13 MPSA14 MPSA13 MPSA14 SILICON TRANSISTOR CORP 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CP307 CXTA14	PDF
CP237 Abstract: 2n3725a 2N3725 transistor 2N3725 MPQ3725 MPQ3725A chip die npn transistor Contextual Info: PROCESS CP237 Central Small Signal Transistor TM Semiconductor Corp. NPN - Saturated Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 30 x 30 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.4 x 12.5 MILS Emitter Bonding Pad Area	Original	CP237 2N3725 2N3725A MPQ3725 MPQ3725A CP237 2n3725a 2N3725 transistor 2N3725 MPQ3725 MPQ3725A chip die npn transistor	PDF
2N2369A Abstract: CMPT2369 CP207 chip die npn transistor chip die transistor transistor npn 29 Contextual Info: Central TM Semiconductor Corp. PROCESS CP207 Small Signal Transistor NPN - Saturated Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 14 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 3.1 x 2.9 MILS Emitter Bonding Pad Area	Original	CP207 2N2369A CMPT2369 16-August 435-111OCESS 2N2369A CMPT2369 CP207 chip die npn transistor chip die transistor transistor npn 29	PDF
CMPT2369 Abstract: 2N2369A CP207 chip die npn transistor Contextual Info: PROCESS CP207 Central Small Signal Transistor TM Semiconductor Corp. NPN - Saturated Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 14 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 3.1 x 2.9 MILS Emitter Bonding Pad Area	Original	CP207 2N2369A CMPT2369 435-11PROCESS CMPT2369 2N2369A CP207 chip die npn transistor	PDF
Transistor 2N3866 Abstract: 2N3866 2N3866 application note RF 2N3866 CP223 CP-22-3 chip die npn transistor chip die transistor Contextual Info: PROCESS CP223 Central Small Signal Transistor TM Semiconductor Corp. NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 3.5 MILS DIAMETER Emitter Bonding Pad Area 3.5 x 3.5 MILS	Original	CP223 2N3866 435-182Chip Transistor 2N3866 2N3866 2N3866 application note RF 2N3866 CP223 CP-22-3 chip die npn transistor chip die transistor	PDF
2N2484 Abstract: CMPT6429 CMPT2484 CMPT5088 CMPT5089 CMPT6428 CP188 Transistor 2N2484 chip die npn transistor Contextual Info: Central TM Semiconductor Corp. PROCESS CP188 Small Signal Transistor NPN - Low Noise Amplifier Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 15 x 15 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area	Original	CP188 CMPT2484 CMPT5088 CMPT5089 CMPT6428 CMPT6429 2N2484 2N2484 CMPT6429 CMPT2484 CMPT5088 CMPT5089 CMPT6428 CP188 Transistor 2N2484 chip die npn transistor	PDF
CMPT3090L Abstract: CMXT3090L CP309 CXT3090L CZT3090L Contextual Info: PROCESS CP309 Power Transistor NPN - Low Saturation Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 41.3 x 41.3 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 9.4 x 9.2 MILS Emitter Bonding Pad Area 12.8 x 10.2 MILS Top Side Metalization	Original	CP309 CMPT3090L CXT3090L CZT3090L CMXT3090L 22-March CMPT3090L CMXT3090L CP309 CXT3090L CZT3090L	PDF
CMPT6429 Abstract: 2N2484 CMPT2484 CMPT5088 CMPT5089 CMPT6428 CP188 Contextual Info: Central TM Semiconductor Corp. PROCESS CP188 Small Signal Transistor NPN - Low Noise Amplifier Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 15 x 15 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area	Original	CP188 CMPT2484 CMPT5088 CMPT5089 CMPT6428 CMPT6429 2N2484 14-August CMPT6429 2N2484 CMPT2484 CMPT5088 CMPT5089 CMPT6428 CP188	PDF
395 transistor Abstract: CP221 CZT2000 Transistor 395 Contextual Info: PROCESS CP221 Central Small Signal Transistor NPN- High Voltage Darlington Transistor Chip TM Semiconductor Corp. PROCESS DETAILS Process EPITAXIAL BASE Die Size 39.5 X 39.5 MILS Die Thickness 9.8 MILS Base Bonding Pad Area 3.9 x 5.1 MILS Emitter Bonding Pad Area	Original	CP221 CZT2000 395 transistor CP221 CZT2000 Transistor 395	PDF

2N5109 Abstract: NPN planar RF transistor CP229 chip die npn transistor chip die transistor Contextual Info: PROCESS CP229 Small Signal Transistors NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.7 x 21.7 MILS Die Thickness 8.7 MILS Base Bonding Pad Area 3.2 MILS Diameter Emitter Bonding Pad Area 3.4 x 3.4 MILS Top Side Metalization	Original	CP229 2N5109 2N5109 NPN planar RF transistor CP229 chip die npn transistor chip die transistor	PDF
CJDD3110 Abstract: CP311 Contextual Info: PROCESS CP311 Power Transistor NPN High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 109.5 x 109.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 23.6 x 15.4 MILS Emitter Bonding Pad Area 37.8 x 15.8 MILS Top Side Metalization	Original	CP311 CJDD3110 CJDD3110 CP311	PDF
CMPT6429 Abstract: 2N2484 CMPT2484 CMPT5088 CMPT5089 CMPT6428 CP188 Contextual Info: PROCESS CP188 Central Small Signal Transistor NPN - Low Noise Amplifier Transistor Chip TM Semiconductor Corp. PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 15 x 15 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area	Original	CP188 CMPT2484 CMPT5088 CMPT5089 CMPT6428 CMPT6429 2N2484 CMPT6429 2N2484 CMPT2484 CMPT5088 CMPT5089 CMPT6428 CP188	PDF
MJ15003 Abstract: mj15003 equivalent CP176 multi emitter transistor Contextual Info: PROCESS CP176 Central Power Transistor TM Semiconductor Corp. NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process MULTI EPITAXIAL PLANAR Die Size 203 x 227 MILS Die Thickness 12.5 ± 1.0 MILS Base Bonding Pad Area 38 x 76 MILS Emitter Bonding Pad Area	Original	CP176 MJ15003 MJ15003 mj15003 equivalent CP176 multi emitter transistor	PDF
CMPTA29 Abstract: CP257 MPSA28 MPSA29 Contextual Info: PROCESS CP257 Central Small Signal Transistor NPN - High Voltage Darlington Transistor Chip TM Semiconductor Corp. PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 4.9 x 4.9 MILS Emitter Bonding Pad Area	Original	CP257 MPSA28 MPSA29 CMPTA29 21-September CMPTA29 CP257 MPSA28 MPSA29	PDF
2N3440 Abstract: CMPTA42 equivalent mpsa42 2N3439 CMPT6517 CMPTA44 CP310 CXTA44 CZTA42 CZTA44 Contextual Info: Central TM Semiconductor Corp. PROCESS CP310 Small Signal Transistor NPN - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS	Original	CP310 2N3439 2N3440 CMPTA42 CMPTA44 CMPT6517 CXTA44 CZTA42 CZTA44 MPSA42 2N3440 CMPTA42 equivalent mpsa42 2N3439 CMPT6517 CMPTA44 CP310 CXTA44 CZTA42 CZTA44	PDF
CMLT3410 Abstract: CMPT3410 CMST3410 CMUT3410 CP341V CXT3410 Contextual Info: PROCESS CP341V Small Signal Transistors NPN - Low VCE SAT Transistor Chip PROCESS DETAILS Process Epitaxial Planar Die Size 18 x 18 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.8 x 3.8 MILS Emitter Bonding Pad Area 3.8 x 3.8 MILS Top Side Metalization	Original	CP341V CMLT3410 CMPT3410 CMST3410 CMUT3410 CXT3410 CMLT3410 CMPT3410 CMST3410 CMUT3410 CP341V CXT3410	PDF
2N3904 Abstract: CZT3904 CXT3904 2N3904 die 2N3904 equivalent 2n3904 npn 2N3904 NPN transistor datasheet 2N3904 transistor data sheet free download chip die npn transistor CMLT3904E Contextual Info: PROCESS CP192V Small Signal Transistors NPN - Amp Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13 x 17 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.0 X 3.0 MILS Emitter Bonding Pad Area 3.0 X 3.0 MILS Top Side Metalization	Original	CP192V 2N3904 CMKT3904 CMLT3904E CMPT3904 CMST3904 CXT3904 CZT3904 15-August 2N3904 CZT3904 CXT3904 2N3904 die 2N3904 equivalent 2n3904 npn 2N3904 NPN transistor datasheet 2N3904 transistor data sheet free download chip die npn transistor CMLT3904E	PDF
MICROSEMI 2N2222A Abstract: 2n2222a die 2N2222A JANTXV 10VDC Transistor 2N2222A 2N2222A chip die npn transistor Transistor 2N2222A microsemi Contextual Info: 2N2222A DIE A Microsemi Company 580 Pleasant St. Watertown, MA 02172 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION SWITCHING TRANSISTOR NPN SILICON FEATURES: n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS	Original	2N2222A MIL-PRF-19500/255 10Vdc, 100kHz< MICROSEMI 2N2222A 2n2222a die 2N2222A JANTXV 10VDC Transistor 2N2222A chip die npn transistor Transistor 2N2222A microsemi	PDF
SILICON TRANSISTOR CORP Abstract: MPSH10 datasheet CMPTH10 CP302 MPSH10 MPSH11 chip die npn transistor Contextual Info: PROCESS CP302 Central Small Signal Transistor TM Semiconductor Corp. NPN - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.3 x 2.3 MILS Emitter Bonding Pad Area 2.5 x 2.3 MILS	Original	CP302 MPSH10 MPSH11 CMPTH10 CMPTH11 SILICON TRANSISTOR CORP MPSH10 datasheet CMPTH10 CP302 MPSH10 MPSH11 chip die npn transistor	PDF

CHIP DIE NPN TRANSISTOR Search Results

CHIP DIE NPN TRANSISTOR Result Highlights (5)

CHIP DIE NPN TRANSISTOR Datasheets Context Search

chip die npn transistor

transistor equivalent CT 2n5551

transistor 2N3725

SILICON TRANSISTOR CORP

MPSA13

CP237

2N2369A

CMPT2369

Transistor 2N3866

2N2484

CMPT3090L

CMPT6429

395 transistor

2N5109

CJDD3110

CMPT6429

MJ15003

CMPTA29

2N3440

CMLT3410

2N3904

MICROSEMI 2N2222A

SILICON TRANSISTOR CORP