CHN 714 Search Results

ST CHN 510

Abstract: 83C97 chn 809 chn 809 ST
Contextual Info: 83C97 T e chn o log y, In co rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface and Serial Port PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation S ym bol indentifies product as A u to D U P L E X device. Description

chn 809

Abstract: chn 809 ST Transistor TT 2246 transistor chn 037 MO40 TT 2246 transistor capacitor JA8 KMA Series 232 pin diagram of BC 547 SABRE 408
Contextual Info: 83C95 T e chn o log y, Inco rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters And AUI PRELIMINARY October 1994 S E E Q A u to D U P L E X D esignation Symbol indentifies product as AutoDUPLEX device. D escription The 83C95 is a highly integrated analog interface 1C for

Transistor TT 2246

Abstract: transistor chn 911 TT 2246 transistor jm31a pulse electronics era transformer transistor chn 037 chn 809 S4744
Contextual Info: SEEQ T e chn o log y, Inco rp o rate d 83C96 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation Sym bol indentifies product as A u to D U P L E X device. Description The 83C96 is a highly integrated analog interface 1C for

CHN 617

Abstract: CHN 602 chn 714
Contextual Info: • Microsemi m m Chatsworth, CA m P ro gress P ow ered b y T e chn o log y 21201 Itasca St. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features 10 A m p S ilico n R e ctifie r 50 to 1000 V olts For Surface Mount Applications Extremely Low Thermal Resistance

CHN 550

Abstract: CHN 545 chn 710 CHN 712 chn 538 CHN 431 CHN 709 CHN 741 chn 738 chn 648 equivalent
Contextual Info: R&S ZNC/ZND Vector Network Analyzers User Manual ;xíÇ2 User Manual Test & Measurement 1173.9557.02 ─ 26 This manual describes the following vector network analyzer types: ● R&S®ZNC3 (2 ports, 9 kHz to 3 GHz, N connectors), order no. 1311.6004K12

ST CHN 510

Abstract: chn 714 chn 725 CHN 725 diode CHN 520
Contextual Info: • Microsemi m m Santa Ana, CA m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology 1N6815 (MSASC25H45K) Features 1N6815R Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents

chn 714

Contextual Info: Microsemi m m m Santa Ana, CA Progress Powered b y Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX40N30A Features 300 Volts 40 Amps Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability

chn 714

Contextual Info: Microsemi m m m Santa Ana, CA Progress Powered b y Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX11P50A Features 500 Volts 11 Amps High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode

Contextual Info: Microsemi r n m m Santa Ana, CA Progress Powered b y Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX76N07A Features 70 Volts 76 Amps Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability

chn 714

Contextual Info: Microsemi m m m S a n ta A n a , C A m Progress Powered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEZ50N10A MSAFZ50N10A Features 100 Volts 50 Amps Ultrafast rectifier in parallel with the body diode (MSAE type only)

chn 714

Contextual Info: Microsemi m m m Santa Ana, CA Progress Powered b y Technology m 2830 S. F a irvie w St. Santa Ana, C A 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX20N60A Features 600 Volts 20 Amps Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability

chn 714

Contextual Info: Microsemi m m m Santa Ana, CA m Progress Powered b y Technology 2830 S. F a irvie w St. Santa Ana, C A 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX75N10A Features 100 Volts 75 Amps Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability

CHN 950

Abstract: chn 714
Contextual Info: Microsemi m m m Santa Ana, CA m Progress Powered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAER30N20A MSAFR30N20A Features 200 Volts 30 Amps Ultrafast rectifier in parallel with the body diode (MSAE type only)

Contextual Info: Microsemi r n m m Santa Ana, CA m Progress Powered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEX8P50A Features • 500 Volts 8 Amps High voltage p-channel power mosfet with parallel fast switching, soft

CHN b42

Abstract: chn 743 pin of chn 743 chn 529 CHN 524 chn 729 CHN 849 CHN 616 CHN 847 RYM 17-18
Contextual Info: ADSP-21065L SHARC DSP Technical Reference Revision 2.0, July 2003 Part Number 82-001903-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2003 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written consent

Contextual Info: Microsemi m m m Santa Ana, CA m 2830 S. F a irvie w St. Santa Ana, C A 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology MSAEZ33N20A MSAFZ33N20A Features 200 Volts 33 Amps Ultrafast rectifier in parallel with the body diode (M SAE type only)

MCP3912

Contextual Info: MCP3912 3V Four-Channel Analog Front End Features: Description: • Four Synchronous Sampling 24-bit Resolution Delta-Sigma A/D Converters • 93.5 dB SINAD, -107 dBc Total Harmonic Distortion THD (up to 35th Harmonic), 112 dBFS SFDR for Each Channel • Enables 0.1% Typical Active Power Measurement

chn 714

Abstract: transistor CHN 64
Contextual Info: Microsemi m m m Santa Ana, CA m Progress Powered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAGX60F60A MSAHX60F60A Features 600 Volts 60 Amps 2.9 Volts vce(sat) Rugged polysilicon gate cell structure high current handling capability, latch-proof

FRAME2

Contextual Info: MCP3919 3V Three-Channel Analog Front End Features: Description: • Three Synchronous Sampling 24-bit Resolution Delta-Sigma A/D Converters • 93.5 dB SINAD, -107 dBc Total Harmonic Distortion THD (up to 35th Harmonic), 112 dBFS SFDR for Each Channel • Enables 0.1% Typical Active Power Measurement

CHN 714

Contextual Info: Microsemi m m m S a n ta A n a , C A m Progress Powered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAGZ52F120A MSAHZ52F120A Features 1200 Volts 52 Amps Rugged polysilicon gate cell structure high current handling capability, latch-proof

Contextual Info: MCP3910 3V Two-Channel Analog Front End Features: Description: • Two Synchronous Sampling 24-bit Resolution Delta-Sigma A/D Converters • 93.5 dB SINAD, -107 dBc Total Harmonic Distortion THD (up to 35th harmonic), 112 dB Spurious-Free Dynamic Range (SFDR) for Each

Contextual Info: □IXYS Alabama A ll Am erican Huntsville, AL 205-837-1555 Future Electronics Huntsville, AI. 205-830-2322 N u H orizons Huntsville, AL 205-722-9330 Arizona Future Electronics Phoenix, AZ 602-968-7140 C alifornia North A ll Am erican San Jose, CA 408-441-1300

mode selection table of ic 7495

Contextual Info: group Data Sheet March 1999 Lucent Technologies Bell Labs Innovations T7504 and T5504 Quad PCM Codecs with Filters • Operating temperature range: -4 0 °C to +85 °C Features ■ |a,-law/A-law companding selectable ■ 5 V only Low-power, latch-up-free CMOS technology

Contextual Info: group Data Sheet March 1999 Lucent Technologies Bell Labs Innovations T7504 and T5504 Quad PCM Codecs with Filters • Operating temperature range: -4 0 °C to +85 °C Features ■ |a,-law/A-law companding selectable ■ 5 V only Low-power, latch-up-free CMOS technology