CI D 2530 Search Results

Contextual Info: 25307^2 Ratings TET «CO L and characteristics □ OOSm.G of Fuji I GBT M B T Module 2 . Equivalent Circuit of Module 3 . Equivalent Ci rcui t -r4CO -OE ~ \/z -D Current Control Ci rcui t ó 4 . Absolute Maxima Ratings ( Tj =25 *C) Items This material and the information herein ¡s the property of

oscillator tunnel diode

Abstract: tunnel diode "tunnel diode" oscillator GaAs tunnel diode Gallium Arsenide tunnel diode back Tunnel diode "tunnel diode" tunnel diode oscillator tunnel diode GaAs "back diode"
Contextual Info: CUSTOM COMPONENTS INC IflE D • 2570252 □□□□□ED 1 ■ x~e>*}~ II OSCILLATOR DIODES GALLIUM ARSENIDE rm RS GHz ohm s ohm s Min. (Typ.) (Typ.) fro Part Number ci Æ » 4515A 15 45 4 .76 4520A 20 45 5 .50 4525A 25 45 6 .36 4530A 30 45 7 .28 2515A

Contextual Info: 2319 M PR E CI NE D ON S I CHI A SOLDER TERMINALS PIN TYPE PINS 2313 -X- Board Thickness Length V -X- Board Thickness Length V 1 2 3 .031 .062 .094 .051 .082 .113 1 2 3 4 .031 .062 .094 .125 .051 .084 .113 .145 2319-X-00-XX-00-00-07-0 2313-X-00-XX-00-00-07-0

CI D 2530

Contextual Info: 2319 M PR E CI NE D ON S I CHI A SOLDER TERMINALS PIN TYPE PINS 2313 -X- Board Thickness Length V -X- Board Thickness Length V 1 2 3 .031 .062 .094 .051 .082 .113 1 2 3 4 .031 .062 .094 .125 .051 .084 .113 .145 2319-X-00-XX-00-00-07-0 2313-X-00-XX-00-00-07-0

PT 30 040 pa

Contextual Info: IN D @ UCT 1 K AN Hz CE ± 1 µ 0% H DC R (O hm s) In cI ∆L AD 10 C % In c∆L I AD 20 C % DC MA RES XI IST MU A M NC SR (O E hm F MI s) NI MU M (M HZ ) Surface Mount Toroidal Power Chokes PA R NU T MB ER Series PTHF-SM & PTKM-SM SERIES PTHF-SM HIGH SATURATION CORE

PTHF330-50SM

Abstract: PTHF100-30SM PTHF10-50SM PTHF25-50SM PTHF50-50SM PTHF75-50SM PTKM25-30SM 100-40SM
Contextual Info: IN D @ UCT 1 K AN Hz CE ± 1 µ 0% H DC R (O hm s) In cI ∆L AD 10 C % In c∆L I AD 20 C % DC MA RES XI IST MU A M NC SR (O E hm F MI s) NI MU M (M HZ ) Surface Mount Toroidal Power Chokes PA R NU T MB ER Series PTHF-SM & PTKM-SM SERIES PTHF-SM HIGH SATURATION CORE

icl 2025

Abstract: 2005A TRANSISTOR IFW 2SA1591 2SC4133 BT 3713
Contextual Info: SANYO SEMICONDUCTOR CORP 32E D 7 cn ? G 7 f c 1 0 0 0 1 1 7 5 - G E3 T— 37— 13 V" T— 35— 11 P N P /N P N Epitaxial Planar Silicon Transistors 2051 Switching Applications with Bias Resistances R1=4.7kflf R2=47kO 2530 Applications Switching circuit, inverter circuit, interface circuit, driver circuit

IEC-444

Contextual Info: CRYSTAL UNITS TOYOCOM GENERAL Quartz crystals are electronic parts which can electrically excite the resonance frequency through the piezoelectric phenomenon. The frequency is determined by the orienta­ tion, or cut angle, and dimension of crystal blanks. The

S12642

Abstract: S12642-0404PA-50 L10941-01 S12642-0404PB-50 HAMAMATSU L9181
Contextual Info: 2014 02 COVER STORY PAGE 2 Life Photonics – Innovative Solutions for Global Challenges OPTO-SEMICONDUCTOR PRODUCTS PAGE 10 Maximise MPPC performance with new MPPC modules ELECTRON TUBE PRODUCTS PAGE 14 Flat panel type PMT with high collection efficiency, H12700

ci 4534

Abstract: ph 2531 mf 2530
Contextual Info: DUAL HIGH SPEED OPTOCOUPLER O U T L IN E D R A W IN G HCPL-2530 HCPL-2531 HCPL-4534 S C H E M A T IC DIMENSIONS IN MILLIMETRES AND INCHES load and a 5.6 k f i p u ll-u p resistor. CTR o f the -2531 is 19% m inim um at l F = 16 mA. Features • HIGH SPEED: 1 Mb/s

SMPS CIRCUIT DIAGRAM 5V 20A

Abstract: 400v 20A ultra fast recovery diode 20MT120UF diode 10a 400v
Contextual Info: I27124 rev. D 02/03 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

Contextual Info: ~ Semiconductor, Inc. TC7662B CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC7662B is a pin-compatible upgrade to the Indus­ try standard TC7660 charge pump voltage converter. It converts a +1,5V to +15V input to a corresponding -1 .5 to

CI D 2530

Abstract: IC A 2531
Contextual Info: E s DUAL HIGH-SPEED TRANSISTOR OPTOCOUPLERS ï i OPTOELECTRONICS HCPL-2530 HCPL-2531 PACKAGE DIMENSIONS DESCRIPTION f t f t db ¿3 The HCPL-2530/31 dual o pto cou p le rs contain tw o com ple te ly separated 700 nm GaAsP LED em itters each o ptica lly c o up le d to

ir igbt 1200V 40A

Abstract: 20MT120UF E78996 bridge
Contextual Info: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

Contextual Info: 5/13/02 5/ Bulletin I27124 rev. A 05/02 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

ultrafast diode 10a 400v

Abstract: X 0238 CE
Contextual Info: 5/13/02 Bulletin I27124 rev. B 10/02 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

diode 5dt

Abstract: ERW05-060
Contextual Info: X. SPECIFICATION DEVICE NAME : SILICON DIODE - TYPE NAME : E RW O5 - 0 6 0 SPEC. No. :_ DATE_ :_ F uji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric C o jid .

Contextual Info: 20MT120UFP Vishay High Power Products "Full-Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient RoHS • 10 µs short circuit capability COMPLIANT • HEXFRED antiparallel diodes with ultrasoft reverse

full bridge driver 600v

Abstract: 20MT120UFP ultrafast igbt S610A
Contextual Info: 20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

20MT120UFP

Contextual Info: 20MT120UFP Vishay High Power Products "Full-Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient RoHS • 10 µs short circuit capability COMPLIANT • HEXFRED antiparallel diodes with ultrasoft reverse

20MT120UF

Abstract: 20MT120UFP E78996 full bridge t
Contextual Info: 20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

Contextual Info: 20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

Contextual Info: VS-20MT120UFP www.vishay.com Vishay Semiconductors “Full Bridge” IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft

Contextual Info: VS-20MT120UFP www.vishay.com Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft