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    4067B

    Abstract: 4097B hcc4067b SS1G ci 4067
    Text: s G S - T H O M S O N 07C D I 7 T 2 cia37 0 0 1 4 3 3 ^ 4 I m rrR A TFn '• IN Itb K A Ib U : . h d c /h c f «¡ o tb 1 HCCfHCF 4097B C IR C U IT S - 4IC 08853 ' T-SI ' I I ANALOG MULTIPLEXERS/DEMULTIPLEXERS: 4067B SIN G LE 16-CHANNEL 4097B D IF F E R E N T IA L 8-CHANNEL


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    PDF 4067B 4097B 4067B 16-CHANNEL 4097B 4067B, 4097B. hcc4067b SS1G ci 4067

    SC250D3

    Abstract: 2sc2501
    Text: MOTOROLA SC ÍD I OD ES /O PTO} 77 Öl D e | b3b72SS □ □ 7 cia37 7 J V ' à S - ' / S ' SC 250 S C 2 5 0 3 SC 251 T riacs Bidirectional Triode Thyristors . . . designed primarily for industrial and military applications for the control of ac loads in applications such as light dimmers, power supplies, heating controls,


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    PDF b3b72SS MT20- SC250D3 2sc2501

    SGS15DB070D

    Abstract: sc0039 HALF BRIDGE NPN DARLINGTON POWER MODULE sgsI5 Diode D7E SGS15DB080D sgs15d
    Text: S G S-THONSON 07E D | 7=15=1237 QOlñTSb b 73C 1 8 9 8 5 u TRANSPACK NPN POWER A SG St5 D B 0 7 0 Îl DARLINGTON SGS15DB080D MODULE APPLICATIONS: These products are silicon NPN power dariingtons in half bridge configuration for industrial switching applications with three-phase mains operation.


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    PDF SGS15DB080D 15KVA SGS15DB070D sc0039 HALF BRIDGE NPN DARLINGTON POWER MODULE sgsI5 Diode D7E sgs15d

    diode byx

    Abstract: BYX67-1000 DIODE REDRESSEMENT BYX 13 400 R byx 21 diode byx 67-1000 diode byx 32 BYX/400 BYX67 400 BYX67-600
    Text: STCd S G S—THOMSON O | 7 cî 2 c] c! 3 ? BYX 67-600, R BYX 67-1000, (R) 1 H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY R EC T IFIE R DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02299 D f-Û HIGH VOLTAGE V RRM 6 0 0 -+ 1 0 0 0 V


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    PDF 1/4-28UNF CB-34) diode byx BYX67-1000 DIODE REDRESSEMENT BYX 13 400 R byx 21 diode byx 67-1000 diode byx 32 BYX/400 BYX67 400 BYX67-600

    Thomson-CSF semiconductor

    Abstract: diodes B2V BZV36 MARKING BUX BZV36A-B BZV32 BZV33B
    Text: S^C D 1 s G S-THOMSON O 7^21337 aaOSSbE M THOMSON-CSF * BZV 32,A ,B — BZV 36,A ,B DIVISION SEMICONDUCTEURS V O L TA G E REFERENCE D IO D ES TE M P E R A T U R E C O M P E N S A TE D DIODES D E RÉFÉRENCE D E TENSION (COMPENSÉES EN TEMPÉRA TURE) EPI Z


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    PDF 7121E37 BZV32 BZV36, CB-102) Thomson-CSF semiconductor diodes B2V BZV36 MARKING BUX BZV36A-B BZV33B

    4072B

    Abstract: 4071B-QUAD 4071B 4075B 4072 08 gates TL AND Gates
    Text: S G S-THOHSON D7C 1 | 7121237 GDMSfaH 3 | C O S /M O S a aV INTEGRATED CIRCUITS ' 7929225 , HCC/HCF 4071B 4072b h c c /h c f l J y ' HCC/HCF 40758 _ 4LC 08878 U T - V 3 - 2 ./ S G S SEMICONDUCTOR CORP rncLiMINARY DATA 4071B *•QUAD 2-INPUT OR GATE 4072B - QUAD 4-INPUT OR GATE


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    PDF 4071b 4072b 4075b 4071B-QUAD 4075B 4071B/4072B 33TOV 4072 08 gates TL AND Gates

    diode byx

    Abstract: PAS 1066 byx 21
    Text: STCd | S G S—THOMSON O 7 cî 2 c] c!3? BYX 67-600, R BYX 67-1000, (R) 1 H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02299 D f-Û HIGH VOLTAGE V RRM 600 -+ 1000 V 'F (A V ) <Tcm « 100°C)


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    PDF CB-425) CB-262) CB-262 CB-19) CB-428) CB-244 diode byx PAS 1066 byx 21