CIRCUIT RC TC Search Results

Contextual Info: C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4521BP TC4521BP 24-STAGE FREQUENCY DIVIDER TC4521BP is frequency divider consisting of 24 stages of flip-flops. The input section is equipped with an inverter to enable to use either RC oscillator circuit or crystal oscillator circuit and to accept

TC4521BP

Contextual Info: TC4521BP TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4521BP TC4521BP 24-Stage Frequency Divider TC4521BP is frequency divider consisting of 24 stages of flip-flop. The input section is equipped with an inverter to enable to use either RC oscillator circuit or crystal oscillator circuit and

Contextual Info: TC4521BP TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4521BP TC4521BP 24-Stage Frequency Divider TC4521BP is frequency divider consisting of 24 stages of flip-flop. The input section is equipped with an inverter to enable to use either RC oscillator circuit or crystal oscillator circuit and

Contextual Info: TC4521BP TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4521BP TC4521BP 24-Stage Frequency Divider TC4521BP is frequency divider consisting of 24 stages of flip-flop. The input section is equipped with an inverter to enable to use either RC oscillator circuit or crystal oscillator circuit and

TC4521BP

Contextual Info: TC4521BP TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4521BP TC4521BP 24-Stage Frequency Divider TC4521BP is frequency divider consisting of 24 stages of flip-flop. The input section is equipped with an inverter to enable to use either RC oscillator circuit or crystal oscillator circuit and

Contextual Info: TC4521BP TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4521BP TC4521BP 24-Stage Frequency Divider TC4521BP is frequency divider consisting of 24 stages of flip-flop. The input section is equipped with an inverter to enable to use either RC oscillator circuit or crystal oscillator circuit and

Contextual Info: TC4521BP TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4521BP TC4521BP 24-Stage Frequency Divider TC4521BP is frequency divider consisting of 24 stages of flip-flop. The input section is equipped with an inverter to enable to use either RC oscillator circuit or crystal oscillator circuit and

Contextual Info: TOSHIBA TC4521BP TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4521BP TC4521BP 2 4 -ST A G E FREQUENCY DIVIDER TC4521BP is frequency divider consisting of 24 stages of flipflop. The input section is equipped with an inverter to enable to use either RC oscillator circuit or crystal oscillator circuit

16PIN

Abstract: TC4521BP
Contextual Info: TO SH IBA TC4521BP TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4521BP TC4521BP 2 4 -STA G E FREQUENCY DIVIDER TC4521BP is frequency divider consisting of 24 stages of flipflop. The input section is equipped with an inverter to enable to use either RC oscillator circuit or crystal oscillator circuit

TC4521BP

Abstract: in26 XTAL 32.768K 50RF 16PIN
Contextual Info: TC4521BP TOSHIBA TO SH IBA CM OS D IGITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC4521BP TC4521BP 2 4 -STAG E FREQUENCY DIVIDER TC4521BP is frequency divider consisting of 24 stages of flipflop. The input section is equipped with an inverter to enable to use either RC oscillator circuit or crystal oscillator circuit

transistor c324

Contextual Info: International [rc Rectifier P D - 9.1076 IRGPC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 1 0ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

VCC38

Abstract: 9-GHz PHA2729-300M gp 431
Contextual Info: Radar Pulsed Power Module, 300 Watts, 2.7-2.9 GHz, 100 µS Pulse, 10% Duty 05/15/01 PHA2729-300M Preliminary Features n n n n n n Outline Drawing Includes RC bias circuit In-Phase Combined Pulsed Power Transistors Input and Output Matched to 50 Ω Soft Substrate εR=10.5 Circuit Board

PHA2729-300M

Contextual Info: Radar Pulsed Power Module, 300 Watts, 2.7-2.9 GHz, 100 µS Pulse, 10% 3/29/02 PHA2729-300M Rev. 0 Outline Drawing Features Q Q Q Q Q Q Includes RC bias circuit In-Phase Combined Pulsed Power Transistors Input and Output Matched to 50 Ω Soft Substrate εR=10.5 Circuit Board

Contextual Info: sim THE RESISTOR PEOPLE PRECISION METAL FILM RESISTORS RC • • • • • SERIES* Metal Film Element Low TCRs over a wide resistance area Wide range of power ratings Tight resistance tolerances available Low noise and negligible voltage coefficient Gives circuit designers wide choice of product

tpw 723

Abstract: ACPL-33XJ ACPL-333J AV02-1940EN
Contextual Info: ACPL-333J/332J/331J/330J Managing Very Narrow Input Pulse Width Application Condition with Simple RC Circuit for Highly Integrated Gate Driver Optocouplers Application Note 5430 Introduction The Non-Overlapping Effect The ACPL-333J/332J/331J/330J are advanced 1.5A to

Contextual Info: TC4521BP C 2M O S DIGITAL IN T EG RA TE D CIRCUIT S ILIC O N M ON OLITH IC TC4521BP 24-STAGE FREQUENCY DIVIDER TC4521BP is frequency divider consisting of 24 stages of flip-flops. The input section is equipped with an inverter to enable to use either RC oscillator

16SVPC270M

Abstract: 7443551200 J 3305-1 BSC042N03MS pdcr 318 adp1870 3225A
Contextual Info: Synchronous Buck Controller with Constant On-Time and Valley Current Mode ADP1870/ADP1871 FEATURES TYPICAL APPLICATIONS CIRCUIT VIN = 2.95V TO 20V VIN CC VOUT RTOP RC ADP1870/ ADP1871 CC2 COMP/EN BST CBST FB COUT Q2 SW VREG DRVL PGND RRES LOAD Figure 1. 100

flyback transformer philips

Abstract: FLYBACK CLAMPING DIODE top225 SOD89 flyback snubber VIPER50 application note TOP221 TOP227Y equivalent VIPER100 Application Note TOP201
Contextual Info: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS APPLICATION NOTE ZenBlockTM Zener with integrated blocking diode TM Philips Semiconductors' new ZenBlock replaces double-diode-, RCD- or RC-snubbers in flyback convertors. The new components offer circuit designers the important benefits of lower component

J 3305-1

Abstract: 16SVPC270M wurth inductor ADP1870 transistor J 3305-1 GRM32ER71E226KE15L pdcr 960 7443551200 ACS 085 infineon cool MOSFET dynamic characteristic test
Contextual Info: Synchronous Buck Controller with Constant On-Time and Valley Current Mode ADP1870/ADP1871 FEATURES TYPICAL APPLICATIONS CIRCUIT VIN = 2.95V TO 20V VIN CC VOUT RTOP RC ADP1870/ ADP1871 CC2 COMP/EN BST CBST FB COUT Q2 SW VREG DRVL PGND RRES LOAD Figure 1. 100

radar amplifier s-band 2.7 2.9 GHZ

Abstract: PHA2731-190M
Contextual Info: PHA2731-190M Radar Pulsed Power Amplifier 190W, 2.7-3.1 GHz, 200 s Pulse, 10% Duty M/A-COM Products Released Outline Drawing Features • • • • • • Input and output matched to 50Ω RC bias circuit included Dual NPN silicon class C power transistors

MAPPST2933-190M

Contextual Info: Preliminary Datasheet DS042806 RADAR PULSED POWER PALLET 190 Watts, 2.9 – 3.3 GHz 200 s Pulse, 10% Duty MAPPST2933-190M Preliminary Outline Drawing FEATURES • • • • • Input and output matched to 50Ω RC bias circuit included Dual NPN silicon class C power transistors

Contextual Info: HDLTEK HT447K0/447P0 4-bit Microcontrollers HT447K0/447P0 SPECIFICATION Features • O perating voltage: 2.4V~5V • RC or crystal oscillator circuit a s system clock • A high driving output line with or w ithout carriers • A n in put port w ith latch capability

3 w RF POWER TRANSISTOR 2.7 ghz

Abstract: radar amplifier s-band 2.7 2.9 GHZ 300 watts amplifier s-band 100 watts transistor s-band 2.7Ghz rc circuit PHA2731-190M 190-W
Contextual Info: PHA2731-190M Radar Pulsed Power Amplifier—190 Watts 2.7—3.1 GHz, 200µs Pulse, 10% Duty Outline Drawing1 Features • • • • • • Input and Output matched to 50Ω RC bias circuit included Dual NPN Silicon class C power transistors Soft substrate εr = 10.5

Radar pallet

Abstract: MAPPST2933-190M
Contextual Info: MAPPST2933-190M Radar Pulsed Power Pallet 190W, 2.9-3.3 GHz M/A-COM Products Released; Outline Drawing Features • • • Input and output matched to 50W RC bias circuit included Dual NPN silicon class C power transistors on in BeO hermetic packages Soft substrate er = 10.5