CIRTE Search Results

Sumitomo CRM1076NS

Abstract: SUMITOMO g600 CRM1076NS Compound R3589DR-S TISPA79R241DR-S J-STD-22 R3680DR-S crm1076 bourns R3679DR-S
Contextual Info: THYRISTOR SURGE PROTECTORS August 2007 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team PCN Tracking Number 45 New Assembly/Test Site & Green Mold Compound Bourns is qualifying an additional assembly/test site for manufacture of overvoltage protectors in

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: _u _ N AUER PHILIPS/DISCRETE • ObE D bbS3T31 00113bl T ■ BYV33F SERIES T-03-19 SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes,

KDV143F

Abstract: TFSC
Contextual Info: SEMICONDUCTOR KDV143F TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. FEATURES CATHODE MARK Low Operation Current. Small Package . C 1 D 2 B A E MAXIMUM RATING Ta=25 DIM A B C D E F MILLIMETERS _ 0.05 1.00 +

KDV143F

Contextual Info: SEMICONDUCTOR KDV143F TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. FEATURES CATHODE MARK Low Operation Current. Small Package . C 1 D 2 B A E MAXIMUM RATING Ta=25 DIM A B C D E F MILLIMETERS _ 0.05 1.00 +

KDP628UL

Contextual Info: SEMICONDUCTOR KDP628UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. A FEATURES D 1 6 E Array type 6 Diode in one package B Low Capacitance Low Series resistance 12 ) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage

HY5DV281622DT-4

Contextual Info: HY5DV281622DT 128M 8Mx16 DDR SDRAM HY5DV281622DT This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.5 / Aug. 2003

HY5DU561622CTP

Contextual Info: HY5DU561622CTP 256M 16Mx16 DDR SDRAM HY5DU561622CTP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5DV

Contextual Info: HY5DV281622DTP 128M 8Mx16 DDR SDRAM HY5DV281622DTP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

Sumitomo CRM1076NS

Abstract: SUMITOMO g600 G600 mold compound r3589 J-STD-22 G600 JEDEC 95 CRM1076NS TISP4072F3DR-S r36041
Contextual Info: THYRISTOR SURGE PROTECTORS August 2007 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team PCN Tracking Number 45 New Assembly/Test Site & Green Mold Compound Bourns is qualifying an additional assembly/test site for manufacture of overvoltage protectors in

Contextual Info: SEM ICONDUCTOR KDP629UL TECHNI CAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna sw itches in m obile applications. A FEA TU R ES UÜUÎ ÜUÜ nnnhnn i • Array type 4 Diode in one package CQ • Low Capacitance O • Low Series resistance i 6 * -,

HY5DS283222BF

Abstract: HY5DS283222BFP-33
Contextual Info: HY5DS283222BF P 128M(4Mx32) GDDR SDRAM HY5DS283222BF(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

XR-T5683AID-F

Abstract: XRT5683A
Contextual Info: PRODUCT CHANGE NOTICE PCN PART NUMBER(S): PCN No.: 09-0909-02 Refer to Attachment A DATE: October 9, 2009 PART DESCRIPTION: See www.exar.com LEVEL OF CHANGE: [ ] Level I, Customer Approval. [X] Level II, Customer Information. PRODUCT ATTRIBUTE AFFECTED:

CM1437

Abstract: CM1437-04DE
Contextual Info: CM1437 4 and 8 Channel EMI Filter Arrays with ESD Protection Features Product Description • California Micro Devices’ CM1437 is an EMI filter array with ESD protection, which integrates either four or eight pi filters C-R-C . The CM1437 has component

Contextual Info: SEMICONDUCTOR KDV143EL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. FEATURES 1 Low Operation Current. E Small Package . A F E 2 MAXIMUM RATING Ta=25 CHARACTERISTIC G B D C SYMBOL RATING UNIT Reverse Voltage

2N7002KA

Contextual Info: SEMICONDUCTOR 2N7002KA TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ・ESD Protected 2000V. E B L L ・High density cell design for low RDS ON . D ・Voltage controlled small signal switch. 2 A G ・Rugged and reliable.

Contextual Info: HY5DU561622CTP 256M 16Mx16 GDDR SDRAM HY5DU561622CTP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

KDV144EL

Contextual Info: SEMICONDUCTOR KDV144EL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. FEATURES Low Capacitance : CT=0.30[pF] Max. Low Series resistance : rS=1.3[ 1 E ] (Max.) Small Package . A F E G 2 B D G MAXIMUM RATING (Ta=25 )

H A 431

Abstract: BYV43F BYV43F-35 BYV43F-40A M1208 M2845
Contextual Info: — 1.1 N AUER PHILIPS/DISCRETE ObE D • _ bbS3T31 0011407 fl BYV43F SERIES T—03—19 SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring very low forward voltage drop, low capacitance and absence of stored charge. Their electrical

HY5DU573222AFM-25

Abstract: HY5DU573222AFM HY5DU573222AFM-28 HY5DU573222AFM-33 HY5DU573222AFM-36
Contextual Info: HY5DU573222AFM 256M 8Mx32 GDDR SDRAM HY5DU573222AFM This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5DU56822AT-D4/D43 256M-S DDR SDRAM HY5DU56822AT-D4/D43 This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5DW573222F P 256M(8Mx32) GDDR SDRAM HY5DW573222F(P) This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5DV281622DT-6

Abstract: HY5DV281622DT HY5DV281622DT-33 HY5DV281622DT-36 HY5DV281622DT-4
Contextual Info: HY5DV281622DT 128M 8Mx16 GDDR SDRAM HY5DV281622DT This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.5 / Aug. 2003

KDV142EL

Contextual Info: SEMICONDUCTOR KDV142EL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. FEATURES 1 Low Capacitance : CT=0.35[pF] Max. Low Series resistance : rS=1.3[ E ] (Max.) Small Package . A F E 2 MAXIMUM RATING (Ta=25 CHARACTERISTIC