CISS 200V Search Results

2SK3634

Abstract: mosfet 60a 200v
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3634 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 High voltage: VDSS = 200 V Low Ciss: Ciss = 270 pF TYP. VDS = 10 V, VGS = 0 V Built-in gate protection diode

Contextual Info: Transistors IC SMD Type Product specification 2SK3712 TO-252 Features High voltage: VDSS = 250 V Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 450 pF TYP. VDS = 10 V, ID = 0 A Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max +0.15 5.55-0.15

ciss

Abstract: 2SK3635
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3635 TO-252 Features High voltage: VDSS = 200 V Gate voltage rating: +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 30 V Low Ciss: Ciss = 390 pF TYP. Built-in gate protection diode

mosfet 45a 200v

Abstract: 2SK3712
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3712 TO-252 Features High voltage: VDSS = 250 V Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 450 pF TYP. VDS = 10 V, ID = 0 A Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max +0.15 5.55-0.15

Contextual Info: SHINDENGEN VZ Series Power MOSFET 2SK2560 F20F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 20A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

2SK2559

Contextual Info: SHINDENGEN VZ Series Power MOSFET 2SK2559 F10F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK2560

Abstract: 200v mosfet
Contextual Info: SHINDENGEN VZ Series Power MOSFET 2SK2560 F20F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 20A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

Contextual Info: Ordering number : ENA2301A CPH3459 Power MOSFET 200V, 3.7Ω, 0.5A, Single N-Channel http://onsemi.com Features • On-resistance RDS on 1=2.8Ω (typ)  4V drive  Halogen free compliance  Input Capacitance Ciss=90pF (typ)  Protection Diode in Specifications

Contextual Info: SHINDENGEN VZ Series Power MOSFET 2SK2559 F10F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

2SK2559

Contextual Info: SHINDENGEN VZ Series Power MOSFET 2SK2559 F10F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 10A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.

600PF

Abstract: IRFE230-JQR-B LCC4
Contextual Info: Search Results Part number search for devices beginning "IRFE230" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) IRFE230 N-Channel LCC4 200V 4.8A

F20F20

Abstract: 2SK2560
Contextual Info: SHINDENGEN VZ Series Power MOSFET 2SK2560 F20F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 20A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.

AOTF450

Contextual Info: AOTF450L 200V, 5.8A N-Channel MOSFET General Description Product Summary The AOTF450L is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along

Contextual Info: ATP613 Ordering number : ENA1903 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP613 General-Purpose Switching Device Applications Features • • • Reverse recovery time trr=60ns typ. Input Capacitance Ciss=350pF(typ.) Halogen free compliance

Contextual Info: 2SK4196LS Ordering number : ENA1233A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4196LS General-Purpose Switching Device Applications Features • • ON-resistance RDS on =1.2Ω (typ.) 10V drive • Input capacitance Ciss=360pF Specifications

Contextual Info: ATP613 Ordering number : ENA1903A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP613 General-Purpose Switching Device Applications Features • • • Reverse recovery time trr=60ns typ. Input Capacitance Ciss=350pF(typ.) Halogen free compliance

ENA1638B

Contextual Info: BFL4001 Ordering number : ENA1638B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4001 General-Purpose Switching Device Applications Features • • ON-resistance RDS on =2.1Ω (typ.) 10V drive • Input capacitance Ciss=850pF (typ.) Specifications

K4087

Abstract: 2SK4087LS
Contextual Info: 2SK4087LS Ordering number : ENA0555D SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4087LS General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =0.47Ω (typ.) Input capacitance Ciss=1200pF (typ.) 10V drive Specifications

mosfet k4085

Abstract: K4085 2sk4085
Contextual Info: 2SK4085LS Ordering number : ENA0553E SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4085LS General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =0.33Ω (typ.) Input capacitance Ciss=1200pF (typ.) 10V drive Specifications

K4085

Abstract: mosfet k4085 2SK4085LS
Contextual Info: 2SK4085LS Ordering number : ENA0553D SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4085LS General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =0.33Ω (typ.) Input capacitance Ciss=1200pF (typ.) 10V drive Specifications

K4198

Abstract: 70710 2SK4198FG rh7-5 A1369 2SK41
Contextual Info: 2SK4198FG Ordering number : ENA1369A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4198FG General-Purpose Switching Device Applications Features • • • • ON-resistance RDS on =1.8Ω (typ.) Input capacitance Ciss=360pF (typ.) 10V drive

A1370

Abstract: A1370 transistor 2SK4198FS
Contextual Info: 2SK4198FS Ordering number : ENA1370B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4198FS General-Purpose Switching Device Applications Features • • • • ON-resistance RDS on =1.8Ω (typ.) Input capacitance Ciss=360pF (typ.) 10V drive

A1967

Abstract: WPH4003 ENA1967A ph400
Contextual Info: WPH4003 Ordering number : ENA1967A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET WPH4003 General-Purpose Switching Device Applications Features • • ON-resistance RDS on =8.2Ω (typ.) Input Capacitance Ciss=850pF (typ.) • 10V drive Specifications

A1370

Contextual Info: 2SK4198FS Ordering number : ENA1370C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4198FS General-Purpose Switching Device Applications Features • • ON-resistance RDS on =1.8Ω (typ.) 10V drive • • Input capacitance Ciss=360pF (typ.)