2SK3634
Abstract: mosfet 60a 200v
Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3634 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 High voltage: VDSS = 200 V Low Ciss: Ciss = 270 pF TYP. VDS = 10 V, VGS = 0 V Built-in gate protection diode
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2SK3634
O-252
2SK3634
mosfet 60a 200v
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SK3712 TO-252 Features High voltage: VDSS = 250 V Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 450 pF TYP. VDS = 10 V, ID = 0 A Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max +0.15 5.55-0.15
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2SK3712
O-252
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ciss
Abstract: 2SK3635
Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3635 TO-252 Features High voltage: VDSS = 200 V Gate voltage rating: +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 30 V Low Ciss: Ciss = 390 pF TYP. Built-in gate protection diode
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2SK3635
O-252
ciss
2SK3635
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mosfet 45a 200v
Abstract: 2SK3712
Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3712 TO-252 Features High voltage: VDSS = 250 V Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 450 pF TYP. VDS = 10 V, ID = 0 A Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max +0.15 5.55-0.15
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2SK3712
O-252
mosfet 45a 200v
2SK3712
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN VZ Series Power MOSFET 2SK2560 F20F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 20A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2560
F20F20VZ
FTO-220
2-24V
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2SK2559
Abstract: No abstract text available
Text: SHINDENGEN VZ Series Power MOSFET 2SK2559 F10F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2559
F10F20VZ
FTO-220
2-24V
2SK2559
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2SK2560
Abstract: 200v mosfet
Text: SHINDENGEN VZ Series Power MOSFET 2SK2560 F20F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 20A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2560
F20F20VZ
FTO-220
2-24V
2SK2560
200v mosfet
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2301A CPH3459 Power MOSFET 200V, 3.7Ω, 0.5A, Single N-Channel http://onsemi.com Features • On-resistance RDS on 1=2.8Ω (typ) 4V drive Halogen free compliance Input Capacitance Ciss=90pF (typ) Protection Diode in Specifications
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ENA2301A
CPH3459
900mm
A2301-5/5
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN VZ Series Power MOSFET 2SK2559 F10F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2559
F10F20VZ
FTO-220
2-24V
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2SK2559
Abstract: No abstract text available
Text: SHINDENGEN VZ Series Power MOSFET 2SK2559 F10F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 10A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.
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2SK2559
F10F20VZ
FTO-220
2-24V
2SK2559
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600PF
Abstract: IRFE230-JQR-B LCC4
Text: Search Results Part number search for devices beginning "IRFE230" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) IRFE230 N-Channel LCC4 200V 4.8A
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IRFE230"
IRFE230
IRFE230-JQR-B
600pF
LCC4
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F20F20
Abstract: 2SK2560
Text: SHINDENGEN VZ Series Power MOSFET 2SK2560 F20F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 20A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.
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2SK2560
F20F20VZ
FTO-220
2-24V
F20F20
2SK2560
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AOTF450
Abstract: No abstract text available
Text: AOTF450L 200V, 5.8A N-Channel MOSFET General Description Product Summary The AOTF450L is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along
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AOTF450L
AOTF450L
AOTF450
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Untitled
Abstract: No abstract text available
Text: ATP613 Ordering number : ENA1903 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP613 General-Purpose Switching Device Applications Features • • • Reverse recovery time trr=60ns typ. Input Capacitance Ciss=350pF(typ.) Halogen free compliance
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ATP613
ENA1903
350pF
A1903-5/5
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Untitled
Abstract: No abstract text available
Text: 2SK4196LS Ordering number : ENA1233A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4196LS General-Purpose Switching Device Applications Features • • ON-resistance RDS on =1.2Ω (typ.) 10V drive • Input capacitance Ciss=360pF Specifications
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2SK4196LS
ENA1233A
360pF
A1233-7/7
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Untitled
Abstract: No abstract text available
Text: ATP613 Ordering number : ENA1903A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP613 General-Purpose Switching Device Applications Features • • • Reverse recovery time trr=60ns typ. Input Capacitance Ciss=350pF(typ.) Halogen free compliance
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ATP613
ENA1903A
350pF
A1903-7/7
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ENA1638B
Abstract: No abstract text available
Text: BFL4001 Ordering number : ENA1638B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4001 General-Purpose Switching Device Applications Features • • ON-resistance RDS on =2.1Ω (typ.) 10V drive • Input capacitance Ciss=850pF (typ.) Specifications
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ENA1638B
BFL4001
850pF
PW10s,
A1638-7/7
ENA1638B
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K4087
Abstract: 2SK4087LS
Text: 2SK4087LS Ordering number : ENA0555D SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4087LS General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =0.47Ω (typ.) Input capacitance Ciss=1200pF (typ.) 10V drive Specifications
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ENA0555D
2SK4087LS
1200pF
PW10s,
A0555-5/5
K4087
2SK4087LS
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mosfet k4085
Abstract: K4085 2sk4085
Text: 2SK4085LS Ordering number : ENA0553E SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4085LS General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =0.33Ω (typ.) Input capacitance Ciss=1200pF (typ.) 10V drive Specifications
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ENA0553E
2SK4085LS
1200pF
PW10s,
A0553-7/7
mosfet k4085
K4085
2sk4085
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K4085
Abstract: mosfet k4085 2SK4085LS
Text: 2SK4085LS Ordering number : ENA0553D SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4085LS General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =0.33Ω (typ.) Input capacitance Ciss=1200pF (typ.) 10V drive Specifications
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ENA0553D
2SK4085LS
1200pF
PW10s,
A0553-5/5
K4085
mosfet k4085
2SK4085LS
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K4198
Abstract: 70710 2SK4198FG rh7-5 A1369 2SK41
Text: 2SK4198FG Ordering number : ENA1369A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4198FG General-Purpose Switching Device Applications Features • • • • ON-resistance RDS on =1.8Ω (typ.) Input capacitance Ciss=360pF (typ.) 10V drive
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2SK4198FG
ENA1369A
360pF
PW10s,
A1369-6/6
K4198
70710
2SK4198FG
rh7-5
A1369
2SK41
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A1370
Abstract: A1370 transistor 2SK4198FS
Text: 2SK4198FS Ordering number : ENA1370B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4198FS General-Purpose Switching Device Applications Features • • • • ON-resistance RDS on =1.8Ω (typ.) Input capacitance Ciss=360pF (typ.) 10V drive
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2SK4198FS
ENA1370B
360pF
PW10s,
A1370-5/5
A1370
A1370 transistor
2SK4198FS
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A1967
Abstract: WPH4003 ENA1967A ph400
Text: WPH4003 Ordering number : ENA1967A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET WPH4003 General-Purpose Switching Device Applications Features • • ON-resistance RDS on =8.2Ω (typ.) Input Capacitance Ciss=850pF (typ.) • 10V drive Specifications
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ENA1967A
WPH4003
850pF
PW10s,
A1967-7/7
A1967
WPH4003
ENA1967A
ph400
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A1370
Abstract: No abstract text available
Text: 2SK4198FS Ordering number : ENA1370C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4198FS General-Purpose Switching Device Applications Features • • ON-resistance RDS on =1.8Ω (typ.) 10V drive • • Input capacitance Ciss=360pF (typ.)
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2SK4198FS
ENA1370C
360pF
A1370-7/7
A1370
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