CJ 840 Search Results

Contextual Info: A3S80-840 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.840p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage50 Q Factor Min.10k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleChip

tlo82

Abstract: TLO82 datasheet lm147 lm117 3.3V JM38510/10901BGA TLO82 application lm723 LM338 model SPICE LM723 pin details lm842
Contextual Info: Worldwide Sales Offices Linear/Mixed-Signal Designer’s Guide Winter 2002 FRANCE ITALY PRC SWEDEN National Semicondutores da América do Sul Ltda. World Trade Center Av. das Nações Unidas, 12.551 22nd Floor - cj. 2207 04578-903 Brooklyn São Paulo, SP Brasil

10586 motorola

Abstract: 5962-87793012X Vre1
Contextual Info: REVISIONS LTR APPROVED DATE YR-MO-OA DESCRIPTION REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 10 PMICN/A PREPARED BY STANDARDIZED MILITARY DRAWING —-CJŒDBY THIS DRAWMG IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE

PD84001

Abstract: LDMOS DB-84001-960
Contextual Info: D B -84001-960 Schematic MSub R3 FR4 H =20 mil R2 C1 - •-ItR1 R Fin C4 ■r— t— t TL1 - ± - TL2 -± - Tc6 T ct t ~ ~ TL4 Vcc B2 B1 ' J * C3 C2 L1 T4- k i-i TL5 PD84001 J cj T L6 C9 LDMOS ■ » - 1- i/* <Z> » f t TL7 c„J - 1- C5 R F out

adxl 355

Abstract: pj 986 iv PJ 986 L105C
Contextual Info: niclixcon ALUMINUM ELECTROLYTIC CAPACITORS PF Approved by Reliability Center for Electronic Component, Japan-Certification No. RCJ-03-23C Low Im pedance, High R eliab ility series Low Impedance Long Life R CJ Approved Anti-Solvent Feature Low impedance and high reliability withstanding 5000 hour load life at +105‘C 3000/2000 hours

110v 60 hz ac to 220v 50 hz ac inverter

Abstract: bargraph LCD 138314 62089 COP87L40CJM COP87L40CJN N28B rw2n COP87L42CJN-1N ID-40F
Contextual Info: S e m i c o n d u c t o r March 1996 COP87L40CJ/COP87L42CJ microCMOS One-Time Programmable OTP Microcontrollers General Description The COP87L40CJ/COP87L42CJ are members of the COPS 8-bit OTP microcontroller family. It is pin and soft­ ware compatible to the mask ROM COP84C>CJ/COP842CJ

17-18L

Contextual Info: Outline drawings D im ensions in mm and inch 1 mm = 0.0394" 4 TO-247 SMD TO-220 AB TO-263 AA TO-247 AD E H f 1" i n A 4! M J D o , dT T *T 2 CJ i; 3 I ♦ B f I * H i m F * f A I p- C : A 1. Gate 2. Drain (Collector) 3. Source (Emitter) 4. Drain (Collector)

SR30D-16S

Abstract: sr30d-24r SR30D-16R 12218 SR30D-24S SR30B-20 SR30B-4 SR30B-6 SR30B-8 SR30C-10S
Contextual Info: SR30B-12 SR30B-14 SR30B-16 SR30B-18 SR30B-2 SR30B-20 SR30B-24 SR30B-4 SR30B-6 SR30B-8 SR30C-10R SR30C—IO S SR30C-12R SR30C-12S SR30C-16R 1 1 I I I 1 o o o o o 1200 '1440 ¡300 400 500 Í720 840 960 1080 ; 200 •< 79 - CO tss tsa o o o o o o o o o o o o o o o

Contextual Info: RS 252-8409 No of Cores Largest single wire Outer O/D Copper Figure Cable Weight 12 x 1mm 0.16mm 11.4mm 115.2 kg/km 211 kg/km • • • • • • • • • • • • • • Construction: Conductor: bare copper strands acc. to DIN VDE 0295 class 6 + IEC 60228 class 6

Contextual Info: MBR 840 SCHOTTKY DIE SPECIFICATION General Description: TYPE: MBR840 RSingle □Dual Anode 40 V 8 A (Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage

SB840

Contextual Info: SB 840 SCHOTTKY DIE SPECIFICATION General Description: 40 V 8 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS SYM DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) Average Rectified Forward Current IFAV Maximum Instantaneous Forward Voltage

Contextual Info: DATE NO. REV ISIO N S BY A P P ’D W A V E L E N G T H (J j m l SPECTRA L R E S P O NSE Characteristics I 2S C LIMITS PARAMETER SYMBOL SHORT CIRCUIT CURRENT t lOOfc (} OPEN CIRCUIT VOLT • lOOfc SENSITIVITY t 940 na ( 840 VA V0C 0.30 VOLTS 0.40 TC DARK REVERSE CURRENT 2S°C

Contextual Info: R EV ISIO N S >.{ W COP« J /a 4 3 o A c / v £4- ~JU{. 7 3 < Z N / & «¿¿¡o ¿=. 1 . Z ./ 7& o 25533 O s / : /S O E X Z .& 3 £*J 2 S Z O O A < a te •s A ix S a exs. CM S 840 8 E AJ- S t J0V8C CNJ a 9CA LC: 2*30* 26 JU A J^0 ¿ t : / /& } -& • J S S

Contextual Info: M SH-840 M Quad Simultaneous Sample/Hold with Multiplexer IN N O V A T IO N a n d E X C E L L E N C E FEATURES 4 S im ultaneous sample-holds Internal 4-channel multiplexer 775 nsec acquisition tim e 10V step to 0.01 % includes m ultiplexer 2 Channels with optional X10 gain

2SC3953-SPICE

Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
Contextual Info: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f

2N443

Abstract: 2N4429
Contextual Info: m mmRP Pt'csdiscìs M ic r o m s e m i .‘•'WiWM w « ft?ïèiihK&toffj’ 140 C o m m e rc e Drive M o n tg o m eryville , PA 18936 Te!: <215 631-9 840 2N4429 -4 4431 RF & MICROWAVE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS FOR CLASS C APPLICATIONS

Contextual Info: Detailed Specifications & Technical Data METRIC MEASUREMENT VERSION 8402 Multi-Conductor - Two-Conductor, Low-Impedance Cable For more Information please call 1-800-Belden1 Description: 20 AWG stranded 26x34 high-conductivity TC conductors, EPDM rubber insulation, rayon braid, TC braid

Contextual Info: Detailed Specifications & Technical Data METRIC MEASUREMENT VERSION 8404 Multi-Conductor - Four-Conductor Star Quad, Low-Impedance Cable For more Information please call 1-800-Belden1 Description: 20 AWG stranded 19x32 high-conductivity tinned copper conductors, polyethylene insulation, rayon

varicap an

Abstract: BB205 BA282 BA479G BA679 BA682 diodes varicap
Contextual Info: Vishay Semiconductors Physical Explanation General Terminology Semiconductor diodes are used as rectifiers, switchers, Varicaps and voltage stabilizers see chapter ‘Voltage Regulator and Z-diodes’ . Semiconductor diodes are two-terminal solid-state devices having asymmetrical voltage-current

BB205

Abstract: ir tk 69 104 varicap BA282 BA479G BA679 BA682 varicap diode HR varicap diodes diodes varicap
Contextual Info: Vishay Semiconductors Physical Explanation General Terminology Semiconductor diodes are used as rectifiers, switchers, Varicaps and voltage stabilizers see chapter ‘Voltage Regulator and Z-diodes’ . Semiconductor diodes are two-terminal solid-state devices having asymmetrical voltage-current

BB205

Abstract: power diodes with V-I characteristics BA282 BA479G BA679 BA682 Varicap
Contextual Info: Vishay Semiconductors Physical Explanation General Terminology Semiconductor diodes are used as rectifiers, switchers, Varicaps and voltage stabilizers see chapter ‘Voltage Regulator and Z-diodes’ . Semiconductor diodes are two-terminal solid-state devices having asymmetrical voltage-current

smmd-840

Abstract: MMD-810 MMD832-0805-2 SMMD837-SOD323 MMDB30-0402 MMD-835
Contextual Info: Silicon Step Recovery Diodes Description Features The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming.

1x3 berg connector

Abstract: 1x5 berg connector 1x2b 1x30 Si 7722 4KAO
Contextual Info: r All rights strictly reserved. Reproduction or issue to third porties in ony form whatever is not permitted without written authority from the proprietor. Property of BERG ELECTRONICS Copyright BERG ELECTRONICS INC. BERG •L I CT R ONI CS Tous droits strictement reserves.

MMD0840

Abstract: MMD810-T86 MMDB30-B11 mmdb30-0402 MMDB30-E28 MMD820-0805-2 SMMD-840 MMD820-E28 SMMD840-SOD323 MMD805-0805-2
Contextual Info: Silicon Step Recovery Diodes Description Features The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming.