CJ CL A17 Search Results

Contextual Info: MSS40,000 Series Medium Barrier Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS40,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum

SAS SFF-8087

Abstract: SAS SFF-8086 SAS SFF-8484 SFF8484 pinout SFF-8484 cj cl a17 IPASS SAS SFF-8086 SFF-8087 SFF-8643 pinout
Contextual Info: 10 I MATERIAL 79576-5000 79576-5001 79576-5002 79576-5003 79576-5004 79576-9000 79576-9001 79576-9002 79576-9003 79576-9004 79576-5020 79576-5021 79576-5022 79576-5023 79576-5024 APPS I PASS ON BP I PASS ON BP I PASS ON BP I PASS ON BP I PASS ON BP I PASS ON CTRL

smmd-840

Abstract: MMD-810 MMD832-0805-2 SMMD837-SOD323 MMDB30-0402 MMD-835
Contextual Info: Silicon Step Recovery Diodes Description Features The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming.

MMD0840

Abstract: MMD810-T86 MMDB30-B11 mmdb30-0402 MMDB30-E28 MMD820-0805-2 SMMD-840 MMD820-E28 SMMD840-SOD323 MMD805-0805-2
Contextual Info: Silicon Step Recovery Diodes Description Features The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming.

TC 9260 P

Abstract: 64k X 8 30-pin SIMM
Contextual Info: CYM9260 CYM9261B CYM9262A CYM9263 64K x72SR A M 128Kx 72 SRAM 256K x 72 SRAM 512K x 72 SRAM Features • Operates at 66 MHz • Uses 64K x 1 8 ,128K x 18, or 256K x 18 high perfor­ mance synchronous SRAMs • 168-position Angled DIMM from Amp p/n 179508-2

TMS4464

Abstract: TMS 2764 Texas Instruments IC mk4564 mcm6256 tms4500a Fuji Electric tv schematic diagram ET 439 power module fuji mcm6665 74L5138 TMS4500
Contextual Info: SMYOOO2 . ,MOS Memory Data Book 1984 II I III \' h' \/ Commercial and Military , :\ Specifications ' 1'/ ! . .Jf TEXAS INSTRUMENTS Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide _ Glossary/Timing Conventions/Data Sheet Structure

ACC Microelectronics Corporation

Abstract: MCS200 A2028 MOTOROLA MCS2000 "ACC Microelectronics" g245 MD666 A20286 D245
Contextual Info: Order this data sheet by MCS2220/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information PC/AT Integrated Data & Address Buffer The MCS2220 and MCS2220A are basically one high performance buffer chip running in two different modes. The MCS2220 is a buffer chip running in

Contextual Info: HN62415 Series Preliminary 4M 256K x 16-bit and (512K x 8-bit) Mask ROM • DESCRIPTION The Hitachi HN62415 Series is a 4-Megabit CMOS Mask Programmable Read Only Memory organized as 262,144 x 16-bit and 524,288 x 8-bit. The low power consumption of this device makes it ideal for

Contextual Info: TLC545C, TLC545I, TLC546C, TLC546I 8-BIT ANALOG-TO-DIGITAL CONVERTERS WITH SERIAL CONTROL AND 19 INPUTS S LA S 066B - DECEMBER 1985 - REVISED OCTOBER 1996 8-Bit Re so lu ti on A/D C o n v e r t e r N or DW P A C K A G E TOP V IE W M icro p ro cesso r Peripheral or Stand-Alone

MSPD2018

Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345
Contextual Info: Microwave Diodes Schottky Varactor PIN Step Recovery Planar Tunnel MOS / MIS Capacitors Short Form Catalog 2006 About Aeroflex / Metelics The Experience and Resources to Deliver the Technological Edge In many electronics applications, there is simply no margin for

Contextual Info: 74AHC1G17; 74AHCT1G17 Single Schmitt trigger buffer Rev. 1 — 18 March 2014 Product data sheet 1. General description The 74AHC1G17 and 74AHCT1G17 are single buffers with Schmitt-trigger inputs. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in

dtl logic gates

Abstract: DTL 9930 5 input nand gate dtl U6A994659X U6A909359X U6A993059X A1695 rs-flip-flop toggle nand RS flip-flop
Contextual Info: S G S -A TE S Sem iconductors Digital I.C.'s - DTL DTL 9930 Series Integrated Circuits The DTL family can be used in most logic applications where speed is not the all-important parameter. Nevertheless the gate propagation delay is 25nS and flip-flop toggle frequency is 10MHz. Simplicity of

Texas Instruments TTL

Abstract: texas instruments 74LS612 TMS4500 sn74als966 sunny SCO 020 IC PAL 006A tms4500a SN74AS888 A61686 74ls610
Contextual Info: SDVD001 .LSI Logic Data Book 1986 ~ TEXAS INSTRUMENTS General Information LSI Devices Application Reports Mechanical Data LSI Logic Data Book TEXAS INSTRUMENTS IMPORTANT NOTICE Texas Instruments Til reserves the right to make changes in the devices or the device specifications identified in this publication

marking E47

Abstract: cj cl a17 E43 marking C67-C70 SD-85801-018
Contextual Info: B A B 10 11 12 13 14 15 16 4 5 6 7 8 9 VI EW 0 M MA ING SID 17 18 19 20 21 22 23 24 25 26 27 28 29 O m 2 3 ROW 1 E B D C B 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 B B B B B B B B B B B B B B B B B B B B B B B B B B B B B B B B B B B

MSV34,060-0805-2

Abstract: MSV34000 064-E28 092-H20 SMTD3001 082-E28 092-E28 MSV34,064-E28
Contextual Info: 30 V Silicon Varactor Diodes MSV34,000, SMTD & SMTV Series Description Features The work horse of varactors these diodes are built tough with fully passivated mesa construction and Aeroflex / Metelics trimetallization. Featuring a nominal gamma of 0.46 these diodes

MB838200B

Abstract: mb838200 AL4A mb83
Contextual Info: April 1993 Edition 2.0 FUJITSU DATA SHEET MB838200B/BL CMOS 8M-BIT MASK READ ONLY MEMORY 512K x 16 1M x 8 CMOS MASK READ ONLY MEMORY The Fujitsu M B838200B/BL is a CMOS Si-gate mask-programmable static read only memory organized as 524,288 words by 16 bits or 1,048,576 words by 8 bits.

80pin simm

Abstract: SMART Modular Technologies SM832C512P-12 SM832C512P-15
Contextual Info: JUL 1 5 1993 SM832C512P 2MByte 512K x 32 PROM Module General Description Features The SM832C512P is a high performance, 2Mbyte PROM memory module organized as 512K words by 32 bits, in a 80-pin SIMM (single-in-line memory module) package. • High Density : 2Mbyte

Contextual Info: SIEMENS 19 Device Specification / C161 Device Specification The device specification describes the electrical parameters of the device. It lists DC characteristics like input, output or supply voltages or currents, and AC characteristics like timing characteristics

DD313

Abstract: KM718V787-8 KM718V787-9 ZZ3A10 SRAM sheet samsung
Contextual Info: KM718V787 CMOS SRAM ELECTRONICS 128K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION. • Synchronous Operation. • On-Chip Address Counter. • W rite Self-Timed Cycle. • On- Chip Address and Control Registers. • Single 3.3V±5% Power Supply.

Contextual Info: SIEMENS Specification 07,95 Preliminary C165 Revision History: 07.95 Original Version 25 MHz Previous Releases: 09.94 20 MHz Page Subjects (changes since last revision) 8 External Clock Drive Specification changed. 9 ¿6’ ¿1 4 >¿1 5 ! ¿16 >¿17 updated.

Contextual Info: TLC545C, TLC545I, TLC546C, TLC546I 8-BIT ANALOG-TO-DIGITAL CONVERTERS WITH SERIAL CONTROL AND 19 INPUTS S LA S 066B - D E C E M B E R 1985 - R EVISED O C TO B ER 1996 * 8-Bit Resolution A/D Converter • Microprocessor Peripheral or Stand-Alone Operation I

Contextual Info: U i 0354713 0000112 2 • 2bE D April 12, 1990 ADVANCED ELECTRONIC PKG AEPSS1M9 STATIC RAM MODULE > > 1,048,576 x 9 Organization » O n board BUFFERS for all address and control lines » Low profile design, 0.5 inch stand-off height. > > Double sided to maximize

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

S632000

Abstract: cj cl a17
Contextual Info: 2M Bit 262,144 x 8 Static CMOS Mask ROM -> GOULD Preliminary Data Sheet /• iT lI 1 «Semiconductors S632000 (256K x 8) General Description Features The Gould AMI S632000 device is a 2,097,152 bit static m ask program mable C M O S R O M organized as 260,144 words by 8 bits. The device is fully TTL