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    Untitled

    Abstract: No abstract text available
    Text: CMJ10004 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V) I(C) Max. (A)20 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.400


    Original     		PDF CMJ10004

    CMJ10005

    Abstract: LB400M ADE 617
    Text: LEDYNE COMPONENTS 0^17 302 ÜQÛbSHM T • 2ÔE D TCMJ '33-a* 7 10004 NPN POWER DARLINGTON CMJ 10005 C1001 C 1002 20 AMPERE GEOMETRY 513 • High VCEO to 450V • High Gain • Fast Switching TO-3 r - iSS 4» MAXIMUM RATINGS PARAMfTIR SYMBOL CMJ10004 CMJ10005 C1001 C1002


    OCR Scan     		PDF CMJ10004 CMJ10005 C1001 C1002 LB400M ADE 617

    FEME

    Abstract: CMJ10004 ADE 350 C1001 C1002 cmj1000
    Text: CMJ 10004 CMJ 10005 NPN POWER DARLINGTON C1001 C 1002 20 AMPERE GEOMETRY 513 TO-3 • High VCEO to 450V • High Gain • Fast Switching —?JCr 4» SYM KX CMJ100M CMJ10005 C4001 C1002 450 400 400 VCEO 350 450 450 450 V cex 400 500 500 500 450 8.0 8.0 8.0


    OCR Scan     		PDF C1001 C1002 100KHZ CMJ10004 Mj100tt FEME CMJ10004 ADE 350 C1002 cmj1000