CMOS 4 VOLTAGE Search Results

cmos fan-out

Abstract: MPC94551EF MPC94551 MPC94551D MPC94551DR2 MPC94551EFR2 MPC92459 0.25 CMOS technology
Contextual Info: DATA SHEET Freescale Semiconductor LowTechnical VoltageData 1:4 CMOS Clock MPC94551 Rev 3, 2/2005 MPC94551 Buffer Low Voltage 1:4 CMOS Clock Buffer The MPC94551 is a CMOS 1:4 fanout buffer. The MPC94551 is ideal for applications requiring lower voltage. Features

Contextual Info: Static CMOS Family o! ROMs •Semiconductors March 1992 Table 3: AMI HIGH DENSITY FAMILY OFROMS COMMERCIAL TEMPERATURE 0° to 70°C Device Name S63314 S63334 S63344 S63408 S63418 Process CMOS CMOS CMOS CMOS CMOS Capacity 4 Meg 4 Meg 4 Meg 8 Meg 8 Meg 512K X8

cmos fan-out

Abstract: MPC94551EF MPC94551 MPC94551D MPC94551DR2 MPC94551EFR2
Contextual Info: MPC94551 Rev 3, 2/2005 Freescale Semiconductor Technical Data Low Voltage 1:4 CMOS Clock Buffer MPC94551 The MPC94551 is a CMOS 1:4 fanout buffer. The MPC94551 is ideal for applications requiring lower voltage. Features • • • • • • • • 1:4 CMOS fanout buffer

S5K* CMOS

Abstract: mirror control CMOS global shutter VGA vga cmos monochrome global shutter vga cmos monochrome global samsung S5K433CA S5K433CA
Contextual Info: 1/4 INCH VGA CMOS IMAGE SENSOR S5K433CA, S5K433LA S5K433CA, S5K433LA 1/4” VGA CMOS Image Sensor Preliminary Specification Revision 0.3.1 July 2002 1 S5K433CA, S5K433LA 1/4” VGA CMOS IMAGE SENSOR DOCUMENT TITLE 1/4” Optical Size 640x480(VGA) 3.3V/2.8V CMOS Image Sensor

S5K* CMOS

Abstract: CMOS image sensor with global shutter linear cmos IMAGE SENSOR Samsung CMOS Image sensor S5K433LA03 S5K433CA03 CMOS global shutter cmos IMAGE SENSOR vga S5K433CA samsung S5K433CA
Contextual Info: 1/4 INCH VGA CMOS IMAGE SENSOR S5K433CA, S5K433LA S5K433CA, S5K433LA 1/4” VGA CMOS Image Sensor Preliminary Specification Revision 0.2 Apr. 2002 1 S5K433CA, S5K433LA 1/4” VGA CMOS IMAGE SENSOR DOCUMENT TITLE 1/4” Optical Size 640x480(VGA) 3.3V/2.8V CMOS Image Sensor

MPC94551EF

Contextual Info: Low Voltage 1:4 CMOS Clock Buffer MPC94551 NRND DATASHEET NRND – Not Recommend for New Designs The MPC94551 is a CMOS 1:4 fanout buffer. The MPC94551 is ideal for applications requiring lower voltage. MPC94551 Features • • • • • • • • 1:4 CMOS fanout buffer

Contextual Info: CMOS Pin Electronics Product Listing January 1999 Part Number Technology Configuration Drivers 211 646 647 649 749 818 846 3µ CMOS 3µ CMOS 3µ CMOS 3µ CMOS 4µ CMOS 4µ CMOS 4µ CMOS D/D D/C/L D/C/L D/C D/C D/C D/D/C/L 2 1 1 8 8 8 1 16 2 – 1 Comparators

Contextual Info: K M 4 4 C 10 0 4 D J CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

Contextual Info: K M 4 4 C 1OOOD J CMOS DRAM ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

Contextual Info: K M 4 4 C lOOODT CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

KM44C1000D

Abstract: KM44V1000D
Contextual Info: K M 4 4 V 1OOODT ELECTRONICS CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

S63256

Contextual Info: Static CMOS A i w i i s ^ ^ _ Family ol ROMs March 1992 V AMI LOW VOLTAGE FAMILY OF ROMS COMMERCIAL TEMPERATURE 0° to 70°C Table 4:. S632000L S631000/001L S63512L S63256L S63128L Process CMOS CMOS CMOS CMOS CMOS Capacity 2 MEG 1 MEG

Contextual Info: MEMORY CMOS 4 x 4 M x 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F64442C-102/-103/-102L/-103L CMOS 4-Bank x 4,194,304-Word x 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64442C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

T54P

Contextual Info: MEMORY CMOS 4 x 4 M x 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F64442C-102/-103/-102L/-103L CMOS 4-Bank x 4,194,304-Word x 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64442C is a CMOS Synchronous Dynamic Random; AecessM em ory SDRAM containing

Contextual Info: MEMORY CMOS 4 x 4 M x 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F64442C-102/-103/-102L/-103L CMOS 4-Bank x 4,194,304-Word x 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64442C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: MEMORY CMOS 4 x 4 M x 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F64442B-103E/-103/-10/-103L/-1OL CMOS 4-Bank x 4,194,304-Word x 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64442B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

JLCC-84

Abstract: cmos aps CMOS line-scan image sensor ADC hard radiation FillFactory STAR-250 STAR250 star tracker digital SUN SENSOR cmos detector JLCC84 STAR250
Contextual Info: STAR250 Radiation Hard CMOS APS STAR250 Radiation Hard CMOS image sensor Datasheets 1 STAR250 Radiation Hard CMOS APS Table of contents 1 Image Sensor Description 4 1.1 Features 4

TCA 875

Abstract: 44C4100 KM44C4100-6
Contextual Info: KM44C4100 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KM 44C 4100 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KM44C4100 CMOS DRAM 4M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 4 1 00 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

2732 cmos eprom

Contextual Info: A M II.W — Static CMOS Family of ROMs _ March 1992 Table 4 continued : AMI LOW VOLTAGE FAMILY OF ROMS COMMERCIAL TEMPERATURE 0° to 70°C Device Name S63364L S6333L/32 S6316L CMOS CMOS CMOS CMOS 64K 64K 32K 16K Organization 8Kx8 8Kx8

455bk

Abstract: POE-455 p21 transistor POE455 LC573010A LC573015A MFP24S 455bk ceramic EN5899
Contextual Info: Ordering number : EN5899 CMOS IC LC573010A, 573015A 4-bit Single Chip Microcontroller Preliminary Overview Package Dimensions LC573010A and LC573015A are CMOS 4-bit microcontroller featuring low-voltage operation and low power dissipation. Both LC573010A and LC573015A incorporate a 4-bit

UCN-4807A

Contextual Info: 4-TO-16 LINE LATCHED DECODER/DRIVERS The UCN5816A and UCN5816EP 4-to-16 line latched decoder/ drivers combine low-power CMOS inputs and logic with 16 highcurrent, high-voltage bipolar outputs. The CMOS inputs cause minimal loading and are compatible with standard CMOS, PMOS, and NMOS

44c4000

Contextual Info: CMOS DRAM KM44C4000 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

tca 761

Abstract: 44C4000-6 KM44C4000
Contextual Info: CMOS DRAM KM44C4000 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications