CMOS 4098 Search Results

AO4L

Abstract: ld3p AO15A AO16A FD3S AO15AN AO23L BT8C datasheet MTC-35400 mux2*1
Contextual Info: MTC-35000 CMOS 0.5µ Standard Cell Library Services October ‘98 CMOS Family Features • Technology - 0.5µ CMOS for mixed analog 2 digital application - 0.5 micron CMOS transistors, triple layer metal, single or doble poly layer - Self-aligned twin tub Nand P-wells

4342414

Abstract: AS7C34098 AS7C4098
Contextual Info: March 2001 AS7C4098 AS7C34098 5V/3.3V 256K x 16 CMOS SRAM • Low power consumption: STANDBY Features - 110 mW AS7C4098 /max CMOS - 72 mW (AS7C34098)/max CMOS • AS7C4098 (5V version) • AS7C34098 (3.3V version) • Industrial and commercial temperature

AS7C34098

Abstract: AS7C4098 cmos4098
Contextual Info: May 2001 AS7C4098 AS7C34098 5V/3.3V 256K x 16 CMOS SRAM • Low power consumption: STANDBY Features - 110 mW AS7C4098 /max CMOS - 72 mW (AS7C34098)/max CMOS • AS7C4098 (5V version) • AS7C34098 (3.3V version) • Industrial and commercial temperature

cmos 4098

Contextual Info: AS7C4098 AS7C34098 September 2001 5V/3.3V 256K x 16 CMOS SRAM • Low power consumption: STANDBY Features - 110 mW AS7C4098 /max CMOS - 72 mW (AS7C34098)/max CMOS • AS7C4098 (5V version) • AS7C34098 (3.3V version) • Industrial and commercial temperature

AS7C34098

Abstract: AS7C4098
Contextual Info: January 2001 AS7C4098 AS7C34098 5V/3.3V 256K x 16 CMOS SRAM • Low power consumption: STANDBY Features - 110 mW AS7C4098 /max CMOS - 72 mW (AS7C34098)/max CMOS • AS7C4098 (5V version) • AS7C34098 (3.3V version) • Industrial and commercial temperature

AS7C4098-20JC

Abstract: 4342414
Contextual Info: August 2000 AS7C4098 AS7C34098 5V/3.3V 256K x 16 CMOS SRAM • Low power consumption: STANDBY Features - 110 mW AS7C4098 /max CMOS - 72 mW (AS7C34098)/max CMOS • AS7C4098 (5V version) • AS7C34098 (3.3V version) • Industrial and commercial temperature

AS7C34098

Abstract: AS7C4098
Contextual Info: June 2000 AS7C4098 AS7C34098 5V/3.3V 256K x 16 CMOS SRAM • Low power consumption: STANDBY Features - 110 mW AS7C4098 /max CMOS - 72 mW (AS7C34098)/max CMOS • AS7C4098 (5V version) • AS7C34098 (3.3V version) • Industrial and commercial temperature

LR40981A

Abstract: LR40981 pulse dialer phones
Contextual Info: Pulse Dialer CM OS LSI LR 40981A LR40981A • Pulse Dialer CMOS LSI Pin Connections Description T h e LR40981A is a CMOS LSI for pulse dialer with redial which integrates a ceram ic reso n ato r as a frequency reference. V dd | T V REF [j[ CO L , T ■ Features

7507C

Abstract: transistor equivalent for 2N5401 "Constant Current diode"
Contextual Info: SHARP E L E K / MELEC 1SE O I D IV fllö G T T fl 0 0 G 1 2 7 A Pulse Dialer CMOS LSI LR40982 • LR40982 T-75 -07-07 Pulse Dialer CMOS LSI Pin Connections Description The LR40982 is a CMOS LSI for pulse dialer with redial which integrates a ceramic resonator as a fre­

DIN527

Abstract: TH58NS100DC
Contextual Info: TH58NS100DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 1-GBIT 128M x 8 BITS CMOS NAND E PROM (128M BYTE SmartMedia ) DESCRIPTION The TH58NS100 is a single 3.3-V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable

Contextual Info: TH58NS100DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1-GBIT 128M x 8 BITS CMOS NAND E PROM (128M BYTE SmartMedia TM ) DESCRIPTION The TH58NS100 is a single 3.3-V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable

7C34098-20

Abstract: AS7C34098 AS7C4098
Contextual Info: High Performance 256Kx16 CMOS SRAM AS7C4098 AS7C34098 256K×16 CMOS SRAM Preliminary information Features • Organization: 262,144 words × 16 bits • High speed - 15/20/25/35 ns address access time - 8/10/12/15 ns output enable access time • Low power consumption

LR40981A

Abstract: telephone keyboard schematic schematic diagram for ac power line voltage con
Contextual Info: SHARP E L E K / M ELEC is e D IV d | aiaov^a 7S b | L R 40981A a o a ia Pulse Dialer CM O S LSI LR40981A ~0 7 - 0 ~ ¡ Pulse Dialer CMOS LSI P in C o n n e c t i o n s D e s c r ip t i o n The LR40981A is a CMOS LSI for pulse dialer with redial which integrates a ceramic resonator as a

AS7C31026

Abstract: AS7C34098 AS7C3513 AS7C4098 7c34098-12
Contextual Info: AS7C4098 AS7C34098 5V/3.3V 256Kx16 CMOS SRAM Features • Easy memory expansion with CE, OE inputs • TTL- and CMOS-compatible, three-state I/ • 44-pin JEDEC standard packages - 400 mil SOJ - 400 mil TSOP II • Center power and ground pins for low noise

74573

Abstract: 74574 7486 XOR GATE 7486 full adder latch 74574 7408, 7404, 7486, 7432 7490 Decade Counter 74373 cmos dual s-r latch 2 bit magnitude comparator using 2 xor gates design a BCD counter using j-k flipflop
Contextual Info: Semiconductor Logic Device Cross-Reference Here is a comprehensive cross-reference of TTL and CMOS chips that are readily available over the counter from such places as Maplin Electronics in the UK . Tables of both TTL and CMOS devices are provided along with tables grouping chips with the same functionality together.

Contextual Info: H igh Performanc e 25ÓKX16 CMOS SRAM AS7C.4098 AS7C34098 2 5 6 K X 1 6 CMOS SRAM Preliminary information Features • O r g a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 b its 1E asy m e m o r y e x p a n s i o n w i t h C E, O E in p u ts • H ig h sp e e d

Contextual Info: TH58NVG5S0FTA20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 32 GBIT 4G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58NVG5S0F is a single 3.3V 32 Gbit (36,305,895,424 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 16384 blocks.

Contextual Info: TH58NYG4S0FBAID TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 16 GBIT 2G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58NYG4S0F is a single 1.8V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks.

TH58NVG*D

Contextual Info: TH58NVG4S0FBAID TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 16 GBIT 2G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58NVG4S0FBAID is a single 3.3V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks.

TH58NVG5S0FTAK0

Contextual Info: TH58NVG5S0FTAK0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 32 GBIT 4G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58NVG5S0F is a single 3.3V 32 Gbit (36,305,895,424 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 16384 blocks.

Contextual Info: TOSHIBA CONFIDENTIAL TENTATIVE TH58NVG5S0FTA20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 32 GBIT 4G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58NVG5S0F is a single 3.3V 32 Gbit (36,305,895,424 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 16384 blocks.

TH58100FT

Abstract: DIN527
Contextual Info: TH58100FT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1-GBIT 128M x 8 BITS CMOS NAND E PROM DESCRIPTION The TH58100 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 8192 blocks. The device has a 528-byte

DIN 4102

Abstract: TH58100FT working and block diagram of ups DIN527
Contextual Info: TH58100FT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1-GBIT 128M ´ 8 BITS CMOS NAND E PROM DESCRIPTION The TH58100 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes ´ 32 pages ´ 8192 blocks. The device has a 528-byte

2N555

Contextual Info: LR40982 Pulse Dialer C M O S LSI LR40982 • Pulse Dialer CMOS LSI Pin Connections Description T he LR40982 is a CMOS LSI for pulse dialer with rediaJ which in tegrates a ceram ic reso n ato r as a fre­ quency reference. Vdd E ■ VR E F H COLi T COLz [T