CMOS-5 NEC Search Results

uPD65801

Abstract: UPD65812 uPD65800 PD65810 PD65811 CMOS Transmission gate Specifications uPD65806 UPD65804 uPD65802 uPD65813
Contextual Info: NEC Electronics Inc. CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, submicron gate arrays, targeted for applications requiring extensive integration and high speeds. The device

D65806

Abstract: 9215K1
Contextual Info: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications

uPD65801

Abstract: uPD65800 UPD65804
Contextual Info: CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, sub­ micron gate arrays, targeted for applications requiring e xtensive in te g ra tio n and high speeds. The device

Contextual Info: M198 The M198 custom drive circuit provides all the necessary circuitry to interface the P35-4700 series wireless LAN to standard 0 /+ 5 V CMOS control levels. Operating from power supplies of plus and minus 5 volts, the M198 converts 5 incoming CMOS control signals to the eight

PD65000

Abstract: 8748 NEC CMOS-5 NEC nec 8748 94Q3 NEC CMOS-4
Contextual Info: SEC CMOS-5 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIM INARY Description The CM O S-5 gate arrays are low -pow er, high-speed integrated circu its fea tu ring 1.2-m icron silicon -ga te CMOS technology. The basic cell on the gate array chip consists o f six transistors, three p-channel and

d27c1024

Abstract: PD27c1024 uPD27C1024
Contextual Info: NEC //PD 27C 1024 6 5 ,5 3 6 X 16-BIT CMOS UV EPROM NEC Electronics Inc. Description Pin Configuration The^PD27C1024 is a 1,048,576-bit, ultraviolet erasable and electrically programmable ROM fabricated with an advanced CMOS process for substantial power savings.

D27c512

Abstract: PD27C512
Contextual Info: NEC /¿PD27C512 6 5 ,5 3 6 X 8-B IT CMOS UV EPROM NEC Electronics Inc. Description Pin Configuration ThejuPD 27C 512 is an ultraviolet erasable, electrically programmable 524,288-bit ROM fabricated with an advanced CMOS process for substantial power savings.

Contextual Info: ISSI IS27DV256 32,768 X 8 DUAL VOLTAGE CMOS EPROM ADVANCE INFORMATION FEBRUARY 1998 FEATURES DESCRIPTION • Dual voltage range operation: 3.0 to 3.6V or 5 V ± 10% T h e /5 5 / IS27DV256 is a dual voltage, low power, high-speed 256K-bit CMOS 32K-word by 8-bit CMOS Programmable

MIC1555

Contextual Info: M IC I 5 5 5 /1 5 5 7 IttyBitty RC Timer / Oscillator General Description Features The MIC1555 IttyB itty™ CMOS RC timer/oscillator and MIC1557 IttyBitty CMOS RC oscillator are designed to pro­ vide rail-to-rail pulses for precise time delay or frequency

Contextual Info: PRELIMINARY KM424C257 CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual po rt Architecture 256K X 4 bits RAM port 5 1 2 x 4 bits SAM port • Performance The Samsung KM 424C257 is a CMOS 2 5 6 K X 4 bit Dual ' Parameter Speed

Contextual Info: PRELIMINARY CMOS DRAM KM49C512 5 1 2 K X 9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 9 C 5 1 2 is a CMOS 5 2 4 ,2 8 8 bit X 9 Dynamic Random A ccess design is optim ized for high perform ance

MSOP-10

Abstract: OPA2355 OPA3355 OPA355 OPA356
Contextual Info: OPA OPA355 OPA2355 OPA3355 35 5 OPA2 355 OPA 335 5 OPA 335 5 SBOS195B – AUGUST 2001 200MHz, CMOS OPERATIONAL AMPLIFIER WITH SHUTDOWN FEATURES DESCRIPTION ● UNITY-GAIN BANDWIDTH: 450MHz APPLICATIONS The OPAx355 series high-speed, voltage-feedback CMOS

Contextual Info: CMOS SHAM KM68V257C 32K x 8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 1 5 ,17ns(Max.) • Low Power Dissipation Standby (TTL) : 30mA(Max.) (CMOS) : 0.1mA(Max.) Operating KM68V2S7C -1 5 : 90mA(Max.) KM68V257C -1 7 : 80mA(Max.)

P100GF-65-3BA-2

Abstract: d16306 IC-3620 D16306AG
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT 64-BIT HIGH-VOLTAGE CMOS DRIVER The /¿PD16306A is a high-voltage CMOS driver for flat display panels such as FIPs and ELs. it consists of a 64bit bidirectional shift register, a 64-bit latch, and a high-voltage CMOS driver. The logic operates on 5 V CMOS level

IC CD4020 timer circuit

Abstract: timer ic cd4020 c1555 MIC1555
Contextual Info: M IC I555/1557 M IC I 5 5 5 /1 5 5 7 IttyBitty RC Timer / Oscillator Advance Information General Description Features The MIC1555 IttyBitty™ CMOS RC timer/oscillator and MIC1557 IttyBitty CMOS RC oscillator are designed to pro­ vide rail-to-rail pulses for precise time delay or frequency

MSOP-10

Abstract: OPA2355 OPA3355 OPA355 OPA356
Contextual Info: OPA355 OPA2355 OPA3355 OPA 355 OPA2 355 OPA 335 5 OPA 33 5 5 SBOS195C – MARCH 2001 – REVISED NOVEMBER 2002 200MHz, CMOS OPERATIONAL AMPLIFIER WITH SHUTDOWN FEATURES DESCRIPTION ● ● ● ● ● The OPA355 series high-speed, voltage-feedback CMOS

MSOP-10

Abstract: OPA2355 OPA3355 OPA355 OPA356
Contextual Info: OPA355 OPA2355 OPA3355 OPA 355 OPA2 355 OPA 335 5 OPA 33 5 5 SBOS195C – MARCH 2001 – REVISED NOVEMBER 2002 200MHz, CMOS OPERATIONAL AMPLIFIER WITH SHUTDOWN FEATURES DESCRIPTION ● ● ● ● ● The OPA355 series high-speed, voltage-feedback CMOS

D16306

Abstract: IC-3620 d16306ag D16306A uPD16306A C10535E IC nec 555 PD16306A
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 64-BIT HIGH-VOLTAGE CMOS DRIVER The ¿¿PD16306A is a high-voltage CMOS driver for flat display panels such as FIPs and ELs. It consists of a 64bit bidirectional shift register, a 64-bit latch, and a high-voltage CMOS driver. The logic operates on 5 V CMOS level

Contextual Info: SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C535 Preliminary SAB 80C515/80C515-16 SAB 80C535/80C535-16 CMOS microcontroller with factory mask-programmable ROM CMOS microcontroller for external ROM • 8 K x 8 R O M S A B 8 0 C 5 1 5 only

KM424C257

Abstract: 6520J 509Y EZ 742 vk 739 Video RAM
Contextual Info: PRELIMINARY KM424C257 CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 256K X 4 bits RAM port 5 1 2 x 4 bits SAM port • Performance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual P a rà ifü fë r - - — Speed

Contextual Info: NEC /iPD75064, 75066, 75068, 75064 A , 75066(A), 75068(A) 5. PERIPHERAL HARDWARE FUNCTIONS 5.1 Ports The follow ing three types of I/O port are provided: • CMOS input ports (PORTO, 1, 11) : 12 • CMOS input/output ports (PORT2,3, 6) : 12 • N-ch open-drain input/output ports (PORT4, 5) :

KM424C257

Abstract: 424C257 Video RAM
Contextual Info: PRELIMINARY M424C257 CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance The Samsung KM 424C257 is a CMOS 2 5 6 K X 4 bit Dual Port DRAM. It consists of a 2 5 6 K X 4 dynamic random

Contextual Info: ADV MICRO MEMORY I M E D § 5 5 7 5 5 a ? f c . â b -z .° \ Advanced Micro Devices Am27C51 131,072-Bit 16384 x 8 High-Performance CMOS PROM DISTINCTIVE CHARACTERISTICS • High-speed (45 ns)/Low-Power (90 mA) CMOS EPROM Technology ■ Direct plug-in replacement for Bipolar PROMs

KM424C257

Contextual Info: PRELIMINARY KM424C257 CMOS VIDEO RAM 2 5 6K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance The Samsung KM 424C257 is a CMOS 2 5 6 K X 4 bit Dual . Parameter Speed