V30010
Abstract: CMST3410 CMST7410 C07 MARKING CODE
Text: CMST3410 NPN CMST7410 PNP SURFACE MOUNT COMPLEMENTARY LOW VCE SAT SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST3410, CMST7410 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy
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CMST3410
CMST7410
CMST3410,
CMST3410:
CMST7410:
OT-323
100mA
500mA
100MHz
V30010
C07 MARKING CODE
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v30010
Abstract: marking C07 CMST7410 CMST3410
Text: CMST3410 NPN CMST7410 PNP SURFACE MOUNT SUPERminiTM COMPLEMENTARY SILICON LOW VCE SAT TRANSISTORS SOT-323 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL Collector-Base Voltage VCBO Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST3410, CMST7410 types are complementary silicon
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CMST3410
CMST7410
OT-323
CMST3410,
CMST3410:
CMST7410:
100mA
500mA
100MHz
v30010
marking C07
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Untitled
Abstract: No abstract text available
Text: CMST3410 NPN CMST7410 PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT COMPLEMENTARY LOW VCE SAT SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST3410, CMST7410 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy
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Original
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PDF
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CMST3410
CMST7410
CMST3410,
CMST3410:
CMST7410:
OT-323
CMST3410)
CMST7410)
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marking C07
Abstract: No abstract text available
Text: CMST3410 NPN CMST7410 PNP SURFACE MOUNT COMPLEMENTARY LOW VCE SAT SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST3410, CMST7410 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy
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Original
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PDF
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CMST3410
CMST7410
CMST3410,
CMST3410:
CMST7410:
OT-323
100mA
500mA
100MHz
marking C07
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CHIP TRANSISTOR
Abstract: transistor 18x18 CMLT7410 CMPT7410 CMST7410 CMUT7410 CP741V
Text: PROCESS CP741V Small Signal Transistors PNP - Low VCE SAT Transistor Chip PROCESS DETAILS Process Epitaxial Planar Die Size 18 x 18 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.8 x 3.8 MILS Emitter Bonding Pad Area 3.8 x 3.8 MILS Top Side Metalization
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CP741V
CMLT7410
CMPT7410
CMST7410
CMUT7410
CHIP TRANSISTOR
transistor
18x18
CMLT7410
CMPT7410
CMST7410
CMUT7410
CP741V
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cp741
Abstract: CMLT7410 CMPT7410 CMST7410 CMUT7410 CP741V small signal transistors
Text: PROCESS CP741V Small Signal Transistors PNP - Low VCE SAT Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.7 x 17.7 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.8 x 3.8 MILS Emitter Bonding Pad Area 3.8 x 3.8 MILS Top Side Metalization
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CP741V
CMLT7410
CMPT7410
CMST7410
CMUT7410
22-March
cp741
CMLT7410
CMPT7410
CMST7410
CMUT7410
CP741V
small signal transistors
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a42e
Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn
Text: Small Signal Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless
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OD-923
OT-923
OT-953
OD-523
OT-523
OT-563
OD-323
OT-323
OT-363
OD-123
a42e
IC 7410
sot-89 A63
CZT900K
npn 2907A
2222a
A77 SOT23
2222ae
A92E
3906 npn
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CMLT7410
Abstract: CMPT7410 CMST7410 CMUT7410 CP741V
Text: PROCESS CP741V Small Signal Transistors PNP - Low VCE SAT Transistor Chip PROCESS DETAILS Process Epitaxial Planar Die Size 18 x 18 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.8 x 3.8 MILS Emitter Bonding Pad Area 3.8 x 3.8 MILS Top Side Metalization
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CP741V
CMLT7410
CMPT7410
CMST7410
CMUT7410
12-August
CMLT7410
CMPT7410
CMST7410
CMUT7410
CP741V
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