CN-CS 1600 S1 Search Results
CN-CS 1600 S1 Result Highlights (1)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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D1U74T-W-1600-12-HB4AC | Murata Manufacturing Co Ltd | AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs |
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CN-CS 1600 S1 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SIEMENS BUP 403 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 2 P in i G Type VCE BUP 403 600V 42A C Pin 3 E Package Ordering Code TO-220 AB C67078-A4406-A2 Maximum Ratings |
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O-220 C67078-A4406-A2 GPT05 6235bD5 | |
BT 816 triac
Abstract: ky 202 h thyristor thyristor aeg thyristor BBC CS 8-12 Halbleiterbauelemente DDR ky 201 thyristor tesla typ 202 thyristor thyristor AEG t 10 n 600 thyristor BBC thyristor BBC CS 0,6
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5066 cpu
Abstract: LC75854W kss4 A03705 se-b3 TDA 0162 cm LC75854E OTV52295TH SQFP64 DL-05
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EN5066A LC75854E, 5854W LC75854E LC75854W 5066 cpu kss4 A03705 se-b3 TDA 0162 cm OTV52295TH SQFP64 DL-05 | |
Contextual Info: SIEMENS 1M X 64-Bit Dynamic RAM Module HYM 641010GS-60/-70 HYM 641020GS-60/-70 Preliminary Information • 1 048 576 words by 64-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle time (-70 version) |
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64-Bit 641010GS-60/-70 641020GS-60/-70 514400BJ/BT) 74ABT244 023SbDS | |
C3205 transistor
Abstract: C4106 C4106 transistor C3205 Transistor C3205 k3505 MP67B k2255 L0307 c4106 datasheet
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24C02 wp stContextual Info: SIEMENS 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module HYM HYM HYM HYM 168pin unbuffered DIMM Module with serial presence detect 64V1605GU-50/-60/-70 64V1645GU-50/-60/-70 72V1605GU-50/-60/-70 72V1645GU-50/-60/-70 Preliminary Information |
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64-Bit 72-Bit 168pin 64V1605GU-50/-60/-70 64V1645GU-50/-60/-70 72V1605GU-50/-60/-70 72V1645GU-50/-60/-70 L-DIM-168-14 V1605/45GU-50/-60/-70 24C02 wp st | |
ST14Contextual Info: Digital Step Attenuator 75Q _ 31.5 dB, 0.5 dB Step 6 Bit, Parallel Control Interface, Dual Supply Voltage Product Features • Dual Supply Voltage: V DD=+3V, VSS=-3V • Immune to latch up • Excellent accuracy, 0.1 dB Typ • Parallel control Interface |
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DC-2000 DAT-31575-PN+ DAT-31575-PN TB-341 Page2of12 ST14 | |
74HC4060TContextual Info: MOTOROLA SC - C L O G I O G2 D | t, Bb7 aSE QGflGbEfl MOTOROLA 7 T-*4S 'Z 2~ n SEMICONDUCTOR TECHNICAL DATA MC54/74HC4060 1 4-S tage Binary Ripple Counter w ith Oscillator J SUFFIX CERAMIC CASE 620-09 High-Performance Silicon-Gate CMOS . The MC54/74HC4060 is identical in pinout to the standard CMOS MC14060B. The |
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MC54/74HC4060 MC14060B. MC54/74HC4060 74HC4060T | |
sc11092
Abstract: sc11066 DY8 001 transformer transistor c1850 SC11011 C1650 C1850 DY9 transformer DY11 coil connection SC11077
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11094CV/CQ/CN SC11094 11094CV-CQ-CN sc11092 sc11066 DY8 001 transformer transistor c1850 SC11011 C1650 C1850 DY9 transformer DY11 coil connection SC11077 | |
Contextual Info: Bulletin 125183/B International S R e c tifie r ST103S SERIES Stud Version INVERTER GRADE THYRISTORS Features • A ll d iffu s e d d e s ig n ■ C e n te r a m p lify in g g a te ■ G u a ra n te e d hig h d v /d t ■ G u a ra n te e d h ig h d i/d t ■ H ig h s u rg e c u rre n t c a p a b ility |
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125183/B ST103S ST103S D-448 D-449 | |
Contextual Info: Preliminary Spec. M it s u b is h i l s is Some contents are subject to change without notice. MH16S64PFC -7,-7L,-8,-8L,-10,-10L 1073741824-BIT 16777216 - WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH16S64PFC is 16777216 - word by 64-bit Synchronous DRAM module. This consists of eight |
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MH16S64PFC 1073741824-BIT 64-BIT 8Mx16 144-pin MIT-DS-0293-0 | |
NE532N
Abstract: NE532 NE532D NE532FE
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NE532 500/uA) NE532 NE532N NE532D NE532FE | |
002435M
Abstract: diode d92 02 LC75854W TB D83 diode TRANSISTOR D123 ENN5066B LC75854E SQFP64 transistor d133 LC75854
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ENN5066B LC75854E, 5854W LC75854E LC75854W 00243bb 002435M diode d92 02 TB D83 diode TRANSISTOR D123 ENN5066B SQFP64 transistor d133 LC75854 | |
M1668Contextual Info: February 199? PRELIMINARY ero Linear ML6686 Intelligent Token Ring Physical Interface GENERAL DESCRIPTION FEATURES The ML6686 Token Ring Physical Interface Circuit is designed for ISO/IEC 8802-5 networks using unshielded twisted pair UTP or shielded twisted pair (STP) media. |
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ML6686 M16686 ML6686 900pf 220pF L6686CQ 32-Pin M1668 | |
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Ceramic Capacitors
Abstract: sic-safco capacitor capacitor sic-safco Sic-Safco tableau des boitiers cms FIRADEC condensateur chimique 1000 uf EUROFARAD smd ceramic capacitor Microspire varistance
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Contextual Info: FAIBLE EPAISSEUR LOW PROFILE CERAMIC CHIP CAPACITORS CLASS 1 AND 2 CONDENSATEURS FAIBLE EPAISSEUR Ces condensateurs de faible épaisseur maximum 0,5 mm , peuvent, grâce à un design adapté des circuits imprimés, être montés directement sous les circuits intégrés dont ils peuvent assurer le |
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F-67441 | |
78058T
Abstract: nec 78054 PD78052GC 78058
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uPD78052 uPD78053 uPD78054 uPD78055 uPD78056 uPD78058 /iPD78052 PD78054 78K/0 /iPD78P054, 78058T nec 78054 PD78052GC 78058 | |
mitsumi fe415-g11
Abstract: fe415-g11 mitsumi tuner k1r smd mitsumi lc filter mitsumi fm tuner block A7MCS AV8100 Data sheet tuner mitsumi Mitsumi fm fe415-g11
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TEA5757HL; TEA5759HL mitsumi fe415-g11 fe415-g11 mitsumi tuner k1r smd mitsumi lc filter mitsumi fm tuner block A7MCS AV8100 Data sheet tuner mitsumi Mitsumi fm fe415-g11 | |
DIN 7337
Abstract: blind rivet N 7337 rivquick T1 blind rivets RIVET 7337B din7337 RIVET 3.2 X 8 R/rivquick T1
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OPA2686Contextual Info: B U R R -B RO W N OPA2686 Dual, Wideband, Low Noise, Voltage Feedback OPERATIONAL AMPLIFIER ííiíS ' FEATURES APPLICATIONS • HIGH GAIN BANDWIDTH: 1.6GHz • LOW NOISE, DIFFERENTIAL AMPLIFIERS • LOW INPUT VOLTAGE NOISE: 1.4nV/VHz • xDSL RECEIVER AMPLIFIER |
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OPA2686 -90dBc 12mA/chan. OPA2686 ZZ182 | |
81117822e
Abstract: 81117822
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SDC4UV6482D- 32MByte 6482D 168-pin, 81117822E- 32MByte 81117822e 81117822 | |
SG300EX11
Abstract: SG300R11 SG300R12 SG300U12 SG300W11 SG300W12 T-40 R20N
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SG300rR, SG300Gr I3-28A2A) 125-C, SG300R11 SG300R12 SC300U11 SG300U12 SG300EX11 SG300W11 SG300W12 T-40 R20N | |
Contextual Info: cP IITSU June 1997 Revision 1.1 data sh e e t SDC4UV6482C- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The S D C 4U V 6482C -(67/84/100/125)T-S is a high performance, 32-m egabtye synchronous, dynamic RAM module organized as |
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SDC4UV6482C- 32MByte 6482C 168-pin, 1117822A 32MByte | |
1000w audio amplifier circuit diagram database
Abstract: 3000 Watt BTL Audio Amplifier 1000w audio amplifier circuit diagram 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM LME49810 hp laptop battery pinout 300w audio amplifier circuit diagram 300w rms audio amplifier circuit diagram 36v 10W Audio amplifier audio Amp. mosfet 1000 watt
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Perfo-223 OT-23 CSP-32 SC-70 O-263 O-252 O-220 1000w audio amplifier circuit diagram database 3000 Watt BTL Audio Amplifier 1000w audio amplifier circuit diagram 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM LME49810 hp laptop battery pinout 300w audio amplifier circuit diagram 300w rms audio amplifier circuit diagram 36v 10W Audio amplifier audio Amp. mosfet 1000 watt |