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    COMMON EMITTER TRANSISTORS Search Results

    COMMON EMITTER TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    COMMON EMITTER TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MS2203 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • • • • • • • 1090 MHz 18 VOLTS POUT = 0.6 WATTS GP = 10.8 dB MINIMUM CLASS A OPERATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS COMMON EMITTER CONFIGURATION The MS2203 is a common emitter, silicon NPN, microwave


    Original     		PDF MS2203 MS2203

    Untitled

    Abstract: No abstract text available
    Text: MS2203 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 1090 MHz 18 VOLTS POUT = 0.6 WATTS GP = 10.8 dB MINIMUM CLASS A OPERATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS COMMON EMITTER CONFIGURATION DESCRIPTION: The MS2203 is a common emitter, silicon NPN, microwave


    Original     		PDF MS2203 MS2203

    MS2203

    Abstract: No abstract text available
    Text: MS2203 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 1090 MHz 18 VOLTS POUT = 0.6 WATTS GP = 10.8 dB MINIMUM CLASS A OPERATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS COMMON EMITTER CONFIGURATION DESCRIPTION: The MS2203 is a common emitter, silicon NPN, microwave


    Original     		PDF MS2203 MS2203

    SD5000

    Abstract: M122 S10A015
    Text: SD5000 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . PRELIMINARY DATA GOLD METALLIZATION EMITTER SITE BALLASTING INTERNAL INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC PACKAGE COMMON EMITTER CONFIGURATION POUT = 1.5 W MIN. WITH 9.5 dB GAIN


    Original     		PDF SD5000 S10A015 SD5000 M122 S10A015

    Untitled

    Abstract: No abstract text available
    Text: SD4590 RF & MICROWAVE TRANSISTORS 800-960MHz CELLULAR BASE STATION . . . . . GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT/OUTPUT MATCHING COMMON EMITTER CONFIGURATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY 26 VOLT, 900 MHz PERFORMANCE


    Original     		PDF SD4590 800-960MHz SD4590

    SD1489

    Abstract: airtronic ATC 100A
    Text: SD1489 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION


    Original     		PDF SD1489 SD1489 airtronic ATC 100A

    push pull class AB RF linear

    Abstract: ATC 100A SD1489
    Text: SD1489 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION


    Original     		PDF SD1489 SD1489 push pull class AB RF linear ATC 100A

    M208

    Abstract: SD4590
    Text: SD4590 RF & MICROWAVE TRANSISTORS 800-960 MHz CELLULAR BASE STATION . . . . . GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT/OUTPUT MATCHING COMMON EMITTER CONFIGURATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY 26 VOLT, 900 MHz PERFORMANCE


    Original     		PDF SD4590 -28dB SD4590 M208

    SD1490

    Abstract: ATC 100A
    Text: SD1490 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 28 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION


    Original     		PDF SD1490 SD1490 ATC 100A

    ZO 150

    Abstract: SD1490 zo 150 66
    Text: SD1490 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 28 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION


    Original     		PDF SD1490 SD1490 ZO 150 zo 150 66

    gold capacitor

    Abstract: SD5000 thomson capacitor M122 S10A015
    Text: SD5000 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . PRELIMINARY DATA GOLD METALLIZATION EMITTER SITE BALLASTING INTERNAL INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC PACKAGE COMMON EMITTER CONFIGURATION P OUT = 1.5 W MIN. WITH 9.5 dB GAIN


    Original     		PDF SD5000 S10A015 SD5000 gold capacitor thomson capacitor M122 S10A015

    SD1456

    Abstract: push pull class AB RF linear TCC3100
    Text: SD1456 TCC3100 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION


    Original     		PDF SD1456 TCC3100) TCC3100 SD1456 push pull class AB RF linear TCC3100

    SD1476

    Abstract: 1uF 63V LCC7950 resistor 1W
    Text: SD1476 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 55 - 88 MHz 32 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB PUSH PULL HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR


    Original     		PDF SD1476 SD1476 1uF 63V LCC7950 resistor 1W

    30mils

    Abstract: SD1732 TDS595 transistor cross ref RF UHF modulat applications of Transistor BDX 54
    Text: SD1732 TDS595 RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 25 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION


    Original     		PDF SD1732 TDS595) TDS595 SD1732 30mils TDS595 transistor cross ref RF UHF modulat applications of Transistor BDX 54

    SD1732

    Abstract: TDS595 s3 vision LCC capacitor S2
    Text: SD1732 TDS595 RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 25 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION


    Original     		PDF SD1732 TDS595) TDS595 SD1732 TDS595 s3 vision LCC capacitor S2

    R45X

    Abstract: 20AWG M208 SD4590
    Text: SD4590 RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT/OUTPUT MATCHING COMMON EMITTER CONFIGURATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY 26 VOLT, 900 MHz PERFORMANCE


    Original     		PDF SD4590 -28dB STD-883D SD4590 R45X 20AWG M208

    SD1456

    Abstract: TCC3100 push pull class AB RF linear
    Text: SD1456 TCC3100 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION


    Original     		PDF SD1456 TCC3100) TCC3100 SD1456 TCC3100 push pull class AB RF linear

    VK200 FERRITE

    Abstract: 22 J.63 capacitor vk-200 ferrite choke VK-200 M142 SD4017
    Text: SD4017 RF & MICROWAVE TRANSISTORS 806-960 MHz CELLULAR BASE STATIONS . . . . . . GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT MATCHING DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY COMMON EMITTER CONFIGURATION POUT = 30 W MIN. WITH 7.5 dB GAIN


    Original     		PDF SD4017 SD4017 VK200 FERRITE 22 J.63 capacitor vk-200 ferrite choke VK-200 M142

    Untitled

    Abstract: No abstract text available
    Text: CA3081, CA3082 Semiconductor September 1998 General Purpose High Current NPN Transistor Arrays 480.4 Features • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter


    OCR Scan     		PDF CA3081, CA3082 CA3081 CA3082 100mA)

    ca3081

    Abstract: ca3082 common collector npn array transistor Common collector configuration F16 DIODE 3082
    Text: 33 CA3081, CA3082 ^ «f ":.l! ; General Purpose High Current NPN Transistor Arrays " Features Description • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter


    OCR Scan     		PDF CA3081, CA3082 CA3081 CA3082 100mA) common collector npn array transistor Common collector configuration F16 DIODE 3082

    vp 3082

    Abstract: CA3081 CA3082
    Text: CA3081, CA3082 M A ßE»» General Purpose High Current NPN Transistor Arrays November 1996 Features D escription • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter


    OCR Scan     		PDF CA3081, CA3082 CA3081 CA3082 100mA) vp 3082

    MRF839

    Abstract: MRF839F
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF839 MRF839F The RF Line NPN Silicon RF Power Transistors 2 3 W 806-960 MHz RF POWER TRANSISTORS COMMON-EMITTER NPN SILICON . . . designed for 12.5 Volt UHF large-signal, common-emitter amplifier applications in


    OCR Scan     		PDF MRF839F MRF839

    MDC03

    Abstract: Marking TRANSISTOR 737 common collector pnp array common collector npn array MFW14 Diode marking MFW transistor marking code 2C MDC-03 6 "transistor arrays" ic pnp 8 transistor array
    Text: MDC03 Transistor, array, 3 x NPN, 3 x PNP Features Dimensions Units: mm • • available in MFW14 package package marking: MDC03 • three NPN transistors with common emitter and three PNP transistors with common emitter are mounted in single package •


    OCR Scan     		PDF MDC03 MFW14 MFW14) MDC03 -100m -100m QG153EH Marking TRANSISTOR 737 common collector pnp array common collector npn array Diode marking MFW transistor marking code 2C MDC-03 6 "transistor arrays" ic pnp 8 transistor array

    Untitled

    Abstract: No abstract text available
    Text: Transistors General Purpose Transistor Common Emitter Dual Transistors UMY1N/FMY1A •F e a tu re s 1) Both 2SA1037AK ch ip and 2SC241ZK chip in UMT and SMT packages. 2) PNP and NPN transistors are con­ nected in common emitter config­ uration. 3) M ounting co st and area can be


    OCR Scan     		PDF 2SA1037AK 2SC241ZK SC-88A 32MHz