CONSTRUCTION OF PHOTO DIODE Search Results
CONSTRUCTION OF PHOTO DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC |
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CUZ6V8 |
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Zener Diode, 6.8 V, USC |
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CEZ5V6 |
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Zener Diode, 5.6 V, ESC |
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CUZ6V2 |
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Zener Diode, 6.2 V, USC |
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CUZ30V |
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Zener Diode, 30 V, USC |
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CONSTRUCTION OF PHOTO DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. The MXP4000 series of photo diodes |
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MXP4003 MXP4000 1430nm 1550nm MXP4003 | |
25umContextual Info: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. The MXP4000 series of photo diodes |
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MXP4003 1310nm 1550nm MXP4000 1550nm 1430nm MXP4003 25um | |
1550nm photo diode for 10Gbps
Abstract: MXP4003 MXP4005
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MXP4005 MXP400X 12GHz 1550nm 508um 1430nm 1550nm 1550nm photo diode for 10Gbps MXP4003 MXP4005 | |
MXP4000
Abstract: PIN PHOTO DIODE construction of photo diode
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MXP4000 MXP4000 PIN PHOTO DIODE construction of photo diode | |
Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively |
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MXP4002 MXP4000 1550nm MXP4002 | |
construction of photo diode
Abstract: MXP4001 MXP4003 MXP4000 MXP4002 PHOTO diode
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MXP4002 MXP4000 MXP400X 00E-11 MXP4000 MXP4001 00E-12 MXP4003 construction of photo diode MXP4001 MXP4003 MXP4002 PHOTO diode | |
Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively |
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MXP4002 MXP4000 p50nm MXP4002 | |
Contextual Info: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively |
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MXP4003 1310nm 1550nm MXP4000 1550nm | |
construction of photo diode
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 IR PHOTO DIODE amplifier 1550nm 10mW photo diode
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MXP4001 MXP4000 MXP400X 00E-11 MXP4000 00E-12 MXP4002 MXP4003 00E-13 construction of photo diode MXP4001 MXP4002 MXP4003 IR PHOTO DIODE amplifier 1550nm 10mW photo diode | |
Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively |
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MXP4002 1310nm 1550nm MXP4000 1550nm | |
Contextual Info: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively |
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MXP4001 MXP4000 MXP400X 00E-11 MXP4000 00E-12 MXP4002 MXP4003 00E-13 | |
MXP4002
Abstract: PHOTO diode
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MXP4002 1310nm 1550nm MXP4000 1550nm MXP4002 PHOTO diode | |
Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively |
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MXP4002 MXP4000 MXP400X 00E-11 MXP4000 MXP4001 00E-12 MXP4003 | |
1550nm catv receiver
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 1430nm
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MXP4003 MXP4000 PI714-893-2570 MXP400X 00E-11 MXP4000 MXP4001 00E-12 MXP4002 1550nm catv receiver MXP4001 MXP4002 MXP4003 1430nm | |
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TEMD5080Contextual Info: Tem ic TEMD5000 S e m i c o n d u c t o r s Silicon PIN Photodiode Description TEMD5000 is a high speed and high sensitive PIN photo diode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO-5 devices in many applications. |
OCR Scan |
TEMD5000 TEMD5000 950nt 18-Oct-96 TEMD5080 TEMD5080 | |
Contextual Info: Temic TEMD5100 S e m i c o n r i u c t n r s Silicon PIN Photodiode Description T E M D 5 100 is a high speed and high sensitive PIN photo diode in a m iniature flat plastic package. Its top view construction m akes it ideal as a low cost replacem ent of |
OCR Scan |
TEMD5100 950nm) 18-Oct-96 | |
construction of photo diode
Abstract: GaAs array, 850nm 850nm Receivers reliability testing for photo diode
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MXP7A01 10Gbps) MXP7000 850nm 850nm construction of photo diode GaAs array, 850nm 850nm Receivers reliability testing for photo diode | |
construction of photo diode
Abstract: photo diode array amplifier MXP7A02 GaAs array, 850nm IR PHOTO DIODE amplifier 207UM
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MXP7A02 10Gigabit MXP7000 850nm construction of photo diode photo diode array amplifier MXP7A02 GaAs array, 850nm IR PHOTO DIODE amplifier 207UM | |
2um ir photodiode
Abstract: construction of photo diode GaAs 10Gbps photodiode chip photo diode array MXP7A01 GaAs array, 850nm Photo Modules IR PHOTO DIODE amplifier
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MXP7A01 10Gbps) 10Gigabit MXP7000 850nm 2um ir photodiode construction of photo diode GaAs 10Gbps photodiode chip photo diode array MXP7A01 GaAs array, 850nm Photo Modules IR PHOTO DIODE amplifier | |
Contextual Info: MXP7001 – 10Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel |
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MXP7001 10Gbps MXP7000 850nm 850nm | |
PIN photodiode 850nm
Abstract: MXP7000 MXP7001
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MXP7001 10Gigabit MXP7000 850nm PIN photodiode 850nm MXP7001 | |
construction of photo diode
Abstract: MXP7000 MXP7002 PIN PHOTO DIODE GaAs wafer 850nm Receivers
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MXP7002 125Gbps MXP7000 850nm construction of photo diode MXP7002 PIN PHOTO DIODE GaAs wafer 850nm Receivers | |
Contextual Info: MXP7002 – 2.5Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel |
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MXP7002 MXP7000 850nm 850nm | |
photo diode
Abstract: MXP4003 photo diode 10 Gbps pin photo diode MXP4000 sdh microsemi photo diode pin 10 Gbps "Photo Diode" construction of photo diode 1550nm 10mW photo diode
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MXP4003 MXP4000 1310nm 1550nm MXP4003 photo diode photo diode 10 Gbps pin photo diode sdh microsemi photo diode pin 10 Gbps "Photo Diode" construction of photo diode 1550nm 10mW photo diode |