CONT BASE 28 Search Results

13.56Mhz rf amplifier module

Abstract: tiris rfid TA31275EVKIT-315 2.4GHz RECEIVER IC tag RFID 134.2khz antenna design ti 13.56mhz loop antenna antenna 13.56MHz transponder amplifier TA31275EVKIT-433 TRF7960 evm RFID LF
Contextual Info: Readers/Modules Cont. NEW! TRF7960 Evaluation Module LF Base Station IC The TRF7960 evaluation module (EVM) helps designers evaluate the performance of the TRF7960 multiple protocol RFID transceiver. The device incorporates an analog front end, protocol handling, framing,

415 Series

Contextual Info: 415 Series - Screw Terminal SPDT, DPDT, 15 Amps LISTED 225G IND. CONT. EQ. The 415 series is a compact, 15 Amp base mounted industrial relay. It is a versatile relay that offers a variety of contact configurations and options. Excellent contact life assures long mechanical life and

transistor ecg36

Abstract: transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180
Contextual Info: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type Description and Application ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) • bbS3TSfl DDD714b MECG (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo

transistor ECG 152

Abstract: Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041
Contextual Info: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) MECG bbS3TSfl DDD714b (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application

fzt458

Contextual Info: SOT223 HIGH VOLTAGE TRANSISTORS Pinout : 1-Base, 2814-Collector, 3-Emitter Type hFE V ^C cont A Plot W M in/M ax 400 0.5 2.0 v CBO v CEO V 400 v CE(sat) M a x at lc / VCE m A / Volts Volts at lc / Ib mA 50/- 100/5 0.5 100/10 h Typ MHz Com plem ent NPN FZT658

NTE1546

Abstract: NTE1553 346 LED 1a 103
Contextual Info: 1U-3* SEE DIAG 419 VIDEO CHROMA, DEMOD, HORIZ, VERT OSC DR, Vco=12V i 42-LEAD DIP, SEE DIAG 335 '• NTE1547 HYBRID TV VOLTAGE REV NTE1546 BASE U - _ INPUT CASE Color Ctrl— E-Cont Out— Vcc (12V)— Delay I n Contrast C tr lVideo Inv I n Video Inv Out—

ECG283

Abstract: ECG263 ECG261 ECG270 darlington pair transistor ECG287 ECG264 ECG288 ECG268 ECG269
Contextual Info: Transistors COnt#d C o lle c to r T o E m itte r V o lts C o lle c to r T o Base V o lts D e s c rip tio n a n d A p p lic a tio n ECG Typ e (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) BVc b o ECG260 bv Ceo Base to E m itte r V o lts B V EBO M a x.

HITACHI DP-28

Abstract: Hitachi DSAUTAZ005
Contextual Info: HN58C256A Series, HN58C257A Series Package Dimensions HN58C256AP Series DP-28 Unit: mm 35.6 36.5 Max 15 13.4 14.6 Max 28 14 1.2 2.54 ± 0.25 0.48 ± 0.10 0.51 Min 1.9 Max 15.24 2.54 Min 5.70 Max 1 + 0.11 0.25 – 0.05 0° – 15° Hitachi Code JEDEC EIAJ

Contextual Info: ADVANCED POWE R TECHNOLOGY b3E I I S/D JJ5J I A dvanced P ow er Te c h n o lo g y OD M m OSSTiOl DDOllDt APT5020HJN 500V 28.0A 0.200 ^ V ' U L Recognized" File No. E145592 S ISOTOP® POWER MOS IV HALF-BRIDGE ISOTOP PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Hitachi DSAUTAZ005

Contextual Info: HN58V256A Series, HN58V257A Series Package Dimensions HN58V256AFP Series FP-28D Unit: mm 18.3 18.8 Max 15 14 1.12 Max 0.17 ± 0.05 0.15 ± 0.04 1 2.50 Max 8.4 28 11.8 ± 0.3 1.7 1.27 0.15 0.40 ± 0.08 0.38 ± 0.06 0.20 M Dimension including the plating thickness

transistor fn 1016

Abstract: transistor r1010 dYNAMIC mIC pre amp ICs FN 1016 mic preamplifier mic PRE-AMPLIFIER ZL300 600 r34 mic amplifier preamplifier st
Contextual Info: ICs for Telephone AN6175K Hands-free Speech Network IC AN6175K 0.9±0.25 0.5±0.1 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 0.96±0.25 13.7±0.3 4.76±0.25 3.3±0.25 +0.1 5 0.0 3 ~ 15° • Features Unit : mm 1 2 3 4 5 6 7 8 9 10 11

APT5020

Abstract: APT5020JN APT5020JN APT
Contextual Info: A D V A N C E D PO WE R TECHNOLOGY b3E ]> • OESVTO'i Ü G 0 1 1 7 b ßflD * A V P A d van ced P o w er Te c h n o l o g y Q D APT5020JN APT5022JN ISOTOP* 500V 500V 28.0A 0.20ÍJ 27.0A 0.22.Q 5 Û "UL Recognized" File No. E145592 S POWER MOS IV' SINGLE DIE ISOTOP® PACKAGE

Hitachi DSAUTAZ005

Contextual Info: HN58V65A Series, HN58V66A Series Package Dimensions HN58V65AP Series HN58V66AP Series DP-28 Unit: mm 35.6 36.5 Max 15 13.4 14.6 Max 28 14 1.2 2.54 ± 0.25 0.48 ± 0.10 0.51 Min 1.9 Max 15.24 2.54 Min 5.70 Max 1 + 0.11 0.25 – 0.05 0° – 15° Hitachi Code

HN58V65-SR

Abstract: HITACHI DP-28 Hitachi DSAUTAZ005
Contextual Info: HN58V65AI, HN58V66AI, HN58V65-SR, HN58V66A-SR Series Package Dimensions HN58V65API Series HN58V66API Series DP-28 Unit: mm 35.6 36.5 Max 15 13.4 14.6 Max 28 14 1.2 2.54 ± 0.25 0.48 ± 0.10 0.51 Min 1.9 Max 15.24 2.54 Min 5.70 Max 1 + 0.11 0.25 – 0.05

Contextual Info: D D3PAK G APT5020SN S 500V 28.0A 0.20Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT5020SN UNIT 500 Volts 28 Continuous Drain Current @ TC = 25°C

APT5020HJN

Abstract: svi 2003 LM 238 Y DIODE H4B apt5020h 5020HJN
Contextual Info: ADVANCED POLI ER TECHNOLOGY b3E i S/D ö S • □ E 5 7 cï G ci DDOUCm » A V P A d va n ced Pow er T e c h n o lo g y 9 OD .J g j: olJS: ]> APT5020HJN ISOTOP* 500V 28.0A 0.20Q ^ 3 ^ "UL Recognized" File No. E145592 S POW ER MOS IV HALF-BRIDGE ISOTOP PACKAGE

apts020

Contextual Info: A dvanced P ow er T e c h n o lo g y 9 O D APT5020SN O S 500V 28.0A 0.20Q H f WER MOS IV1 1 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATINGS Symbol ^D S S All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage

APT8028JVR

Contextual Info: APT8028JVR 28A 0.280Ω Ω 800V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT8028JVR 28A 0.280Ω Ω 800V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT8028JVR 28A 0.280Ω 800V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

714HC

Abstract: 1ER2 APT5020SN
Contextual Info: O D O s A d va n ced P o w er Te c h n o l o g y APT5020SN 500V 28.0A 0.20Í2 POWER MOS IVe N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All R atinns: 1 Parameter Drain-Source Voltage in locc n th cm rica cnA^ifia.

Contextual Info: O D Ô S ADVANCED P ow er Te c h n o l o g y APT5020SN 500V 28.0A 0.20Ü POWER MOS IV< N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S Symbol V DSS All Ratings: T c = 25°C unless otherwise specified. Parameter Drain-Source Voltage

vns0a

Contextual Info: SHC615 B U R R -B R O W N I b b M AVAILABLE IN DIE FORM Wide-Bandwidth, DC RESTORATION CIRCUIT FEATURES APPLICATIONS • PROPAGATION DELAY: 2.2ns • BANDWIDTH: OTA: 750MHz Comparator: 280MHz • BROADCAST/HDTV EQUIPMENT • LOW INPUT BIAS CURRENT: -0.3^iA

BUF600

Abstract: OPA621 OPA623 SHC615 SHC615AP SHC615AU operational transconductance amplifier
Contextual Info: SHC SHC615 615 SHC 615 Wide-Bandwidth, DC RESTORATION CIRCUIT FEATURES APPLICATIONS ● PROPAGATION DELAY: 2.2ns ● BROADCAST/HDTV EQUIPMENT ● BANDWIDTH: OTA: 750MHz Comparator: 280MHz ● TELECOMMUNICATIONS EQUIPMENT ● LOW INPUT BIAS CURRENT: –0.3µA