CONTROLLED AVALANCHE RECTIFIER DIODES FR 27 Search Results

Diode BYW 56

Contextual Info: N AMER PHILIPS/DISCRETE bbS3T31 002bb77 525 » A P X b5E D BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in herm etically sealed axial-leaded glass envelopes, capable of absorbing reverse transients. They are intended for rectifier applications in colour television circuits as well as general purpose appli­

BY627

Contextual Info: N AMER PHILIPS/DISCRETE bRE » • b b S a ' m DDEbSIS b^l I IAPX BY627 M AINTENANC E TYPE CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diode in hermetically sealed axial-leaded ID * envelope capable o f absorbing reverse transients, intended fo r rectifier applications in colour television circuits as well as general pur­

Contextual Info: ^ 3 ffgyair* OSB 9415 SERIES OSM9415 SERIES , OSS 9415 SERIES ^53=131 DDESIOS 5 • MAINTENANCE TYPE N AF1ER PHILIPS/DISCRETE 2SE D HIGH-VOLTAGE RECTIFIER STACKS T -22-07 Ranges of high-voltage rectifier assemblies, incorporating controlled avalanche diodes mounted on

TELEVISION EHT TRANSFORMERS

Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Contextual Info: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes

IEC60-2

Contextual Info: GENERAL EXPLANATORY NOTES RECTIFIER DIODES REVERSE RECOVERY When a semiconductor rectifier diode has been conducting in the forward direction sufficiently long to establish the steady state, there will be a charge due to minority carriers present. Before the device can

PF6HZ

Abstract: P8HZ P6HZ PL10HZ R10HZR P10HZ F62Z P4HZR PL6HZ
Contextual Info: DIODES DE REDRESSEMENT A AVALANCHE CONTROLEE controlled avalanche rectifier diodes Vrw M TYPES ^ V RA @ I r = 1 0 0 jiA V VRRM Vo (V) 1A c my my mxy n PL PL PL PL / 4 HZ 6 HZ 8 HZ 10 HZ 2A 1N 1N 1N 1N IN o 3938 3939 3940 3941 3942 my my F 42 Z F 62 Z F 82 Z

TRANSISTOR BC 187

Abstract: AN569 MTDF1P02HD SMD310 TRANSISTOR BC 545
Contextual Info: MOTOROLA Order this document by MTDF1P02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTDF1P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistor Micro8 devices are an advanced series of power MOSFETs

AN569

Abstract: MTDF1N03HD MTDF1N03HDR2 SMD310
Contextual Info: MTDF1N03HD Preferred Device Power MOSFET 1 Amp, 30 Volts N–Channel Micro8t, Dual These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed

Mullard Mullard quick reference guide

Abstract: CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier
Contextual Info: The Mullard Technical Handbook i t made up of four sets of Books, each comprising several parts:Book 1 light blue Sem iconductor Devices Book 2 (orange) Valves and Tubes Book 3 (green) Com ponents, M aterials and Assem blies Book 4 (purple or dark blue)

MTDF1P02HDR2

Abstract: TRANSISTOR BC 187 AN569 MTDF1P02HD SMD310
Contextual Info: MTDF1P02HD Preferred Device Power MOSFET 1 Amp, 20 Volts P–Channel Micro8t, Dual These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed

mosfet transistor 800 volts.200 amperes

Contextual Info: MTSF2P03HD Preferred Device Power MOSFET 2 Amps, 30 Volts P−Channel Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. Micro8 devices are designed

MTSF2P03HD

Abstract: AN569 MTSF2P03HDR2 SMD310
Contextual Info: MTSF2P03HD Preferred Device Power MOSFET 2 Amps, 30 Volts P–Channel Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed

AN569

Abstract: MTSF3N03HD MTSF3N03HDR2 SMD310 DEVICE MARKING aa
Contextual Info: MOTOROLA Order this document by MTSF3N03HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTSF3N03HD Medium Power Surface Mount Products TMOS Single N-Channel Field Effect Transistor Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs

STR-F6514

Abstract: STR-F6654 EQUIVALENT schematic diagram power supply str f6654 STR-F6524 STRF6523 STR-F6656 EQUIVALENT STR-F6523 schematic diagram power supply str f6656 STR-F6656 STR-F6654
Contextual Info: Preliminary Product Specification - 12th September, 1997. STR-F6600 Series ««* * / f l l •i• ■i rr i m_ ri -«««*■- _ M icrosystems E urope Ltd. c — u > n n f \ ie n SNIPS PRIMARY 1C. Advantages i i > ■ Gmtìtj Redated P arts Count A nd »dw Rated MOSFET

Contextual Info: MTDF1C02HD Preferred Device Power MOSFET 1 Amp, 20 Volts Complementary Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. Micro8 devices are designed

Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

AN569

Abstract: MTDF1C02HD MTDF1C02HDR2 SMD310 "step recovery diode" 1.7 pf
Contextual Info: MTDF1C02HD Preferred Device Power MOSFET 1 Amp, 20 Volts Complementary Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed

AN569

Abstract: MTDF1C02HD SMD310
Contextual Info: MOTOROLA Order this document by MTDF1C02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTDF1C02HD Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs

SMD310

Abstract: AN569 MTDF2N06HD MTDF2N06HDR2
Contextual Info: MTDF2N06HD Preferred Device Power MOSFET 2 Amps, 60 Volts N–Channel Micro8t, Dual Micro8 devices are an advanced series of Power MOSFETs that contain monolithic back–to–back zener diodes. These zener diodes provide protection against ESD and unexpected transients. These

Contextual Info: MTDF1N02HD Preferred Device Power MOSFET 1 Amp, 20 Volts N−Channel Micro8t, Dual These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. Micro8 devices are designed

d3n04h

Abstract: AN569 MMDF3N04HD MMDF3N04HDR2
Contextual Info: MMDF3N04HD Preferred Device Power MOSFET 3 Amps, 40 Volts N–Channel SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode

d3n04h

Abstract: AN569 MMDF3N04HD MMDF3N04HDR2 SMD310
Contextual Info: MOTOROLA Order this document by MMDF3N04HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF3N04HD Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistor Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs

AN569

Abstract: MTDF1N02HD MTDF1N02HDR2 SMD310
Contextual Info: MOTOROLA Order this document by MTDF1N02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTDF1N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistor Micro8 devices are an advanced series of power MOSFETs

AB Electronic

Contextual Info: MTSF1P02HD Preferred Device Advance Information Power MOSFET 1 Amp, 20 Volts P−Channel Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. Micro8 devices are designed