COOLER THERMISTOR APD Search Results

InGaas PIN photodiode, 1550 nec

Abstract: APD 1550 nm APD for fiber test InGaAs apd photodiode InGaas APD photodiode, 1550 sensitivity apd 1550 OTDR pin Photodiode 1550 nm NR8360JP-BC InGaAs photodiode 1310 1550 InGaas PIN photodiode, 1550 sensitivity application
Contextual Info: PRELIMINARY DATA SHEET NEC's ø30 µm InGaAs APD IN DIP PACKAGE NR8360JP-BC FOR OTDR APPLICATION FEATURES DESCRIPTION • HIGH QUANTUM EFFICIENCY: η = 85 % @ λ = 1310 nm η = 80 % @ λ = 1550 nm NEC's NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is

photodiode 1550nm nep

Contextual Info: InGaAs Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339759-VAR Description CMC Electronics’ 264-339759 Series are using either a InGaAs APD with an ionization ratio of 0.2 or a Silion APD with an ionization ratio of 0.02. The APD is coupled to a Gasfet input

NR8360JP-BC

Abstract: InGaAs apd photodiode C10535E C11531E NR8360JP-BC-AZ X13769X CEL avalanche photodiode ingaas ghz B3350
Contextual Info: PHOTO DIODE NR8360JP-BC φ 30 µm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications and

InGaAs apd photodiode

Abstract: C10535E C11531E NR8360JP-BC
Contextual Info: PRELIMINARY DATA SHEET PHOTO DIODE NR8360JP-BC φ 30 µm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications

Contextual Info: DATA SHEET PHOTO DIODE NR8360JP-BC φ 30 m InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications and

PerkinElmer tr 1700

Abstract: PerkinElmer Avalanche Photodiode
Contextual Info: Features and Benefits PerkinElmer’s new family of APD modules features built in amplifier and thermoelectric cooler. They are ideal for demanding LIDAR and range-finding applications. Ultra low noise equivalent power NEP Introduction The new LLAM series of avalanche

NR8360JP-BC

Abstract: datasheet apd 1550 InGaAs apd photodiode apd 1550 OTDR avalanche photodiode ingaas ghz CEL avalanche photodiode ingaas ghz cooler thermistor APD InGaAs APD photodiode 1550
Contextual Info: PRELIMINARY DATA SHEET ø30 µm InGaAs AVALANCHE PHOTO DIODE NR8360JP-BC 14-PIN DIP MODULE WITH TEC FEATURES DESCRIPTION • HIGH QUANTUM EFFICIENCY: η = 85 % @ λ = 1310 nm η = 80 % @ λ = 1550 nm The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated

Contextual Info: PGA-200 Cooled Single Photon Counting Avalanche Photodiode - Discrete The Princeton Lightwave SPAD is an InGaAs/InP avalanche photodetector designed specifically for single photon counting applications. The device is intended for use at pulsed voltage biases above

cooler thermistor APD

Abstract: 3959 8-pin sar3500
Contextual Info: Silicon Avalanche Photodiode SAR3500 DESCRIPTION The SAR3500 is based on a “reach-through” structure for excellent quantum efficiency and high speed. The APD is hermetically sealed in a modified TO-8 package. The SAR3500 is also available in a hermetically sealed

Contextual Info: Silicon Avalanche Photodiode SAR3500 DESCRIPTION The SAR3500 is based on a “reach-through” structure for excellent quantum efficiency and high speed. The APD is hermetically sealed in a modified TO-8 package. The SAR3500 is also available in a hermetically sealed

Contextual Info: PGA-308 Cooled Single Photon Counting Avalanche Photodiode – Fiber Pigtailed The Princeton Lightwave SPAD is an InGaAs/InP avalanche photodetector designed specifically for single photon counting applications. The device is intended for use at pulsed voltage biases above the

photodiode InGaAs NEP

Contextual Info: Receiver TIA with TEC MICROELECTRONICS 200 MHz , 200 m InGaAs APD Avalanche Photodiode 264-339769-101 Description CMC Electronics’ 264-339769-101 is using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier

PNA-208

Contextual Info: PNA-20X Negative Feedback Avalanche Diodes NFADs Product Features •      Single photon sensitivity SWIR (1000 – 1700 nm) response High gain and low noise Fast response with precise timing Compact and robust Simple readout

NR8360JP-BC

Abstract: bc 7-25 InGaAs apd photodiode PX10160E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings

Contextual Info: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings

S4315

Abstract: S2382 S2383 S2383-10 S2384 S2385 S3884 S5139 S8611 S2381
Contextual Info: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings

s2381

Abstract: S2382 S2383-10 S2383 S2384 S2385 S3884 S5139 S8611
Contextual Info: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings

Contextual Info: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings

S2381

Abstract: S2382 S2383 S2383-10 S2384 S2385 S3884 S5139 S8611 Si apd photodiode rangefinder
Contextual Info: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings

NDL5592

Abstract: InGaAs apd photodiode NDL5506P NDL5506PC NDL5506PS NDL5506PSC NDL5530 NDL5530C
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NDL5516PC

Abstract: NDL5592 InGaAs apd photodiode NDL5500 NDL5500C NDL5516P NDL5520C NDL5530 NDL5530C
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

10 gb laser diode

Abstract: E2560S34 70002 E2561H53 E2561H54 E2561H55 E2561H56 E2561H57 E2561H58 E2561H59
Contextual Info: Data Sheet March 2003 E2561-Series 10 Gb/s EML Modules for up to 80 km Transmission Description Tri Qu int OP TO EL CT 10 RO N Gb /s L 2561 ICS, IN C. ase rM od ule Features • Integrated electroabsorption modulator ■ 1.5 µm wavelength, full C-band

S2383

Contextual Info: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884, S4315 series Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings