COOLFLUX Search Results

BT138-800G

Contextual Info: BT138-800G 4Q Triac 27 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT78 TO-220AB plastic package intended for use in applications requiring high bidirectional transient and blocking voltage

Contextual Info: BT152X-400R SCR 26 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring very high inrush current

PSMN4

Contextual Info: TO -2 20F PSMN4R6-100XS N-channel 100V 4.6 mΩ standard level MOSFET in TO220F SOT186A Rev. 1 — 3 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial,

capacitive discharge ignition

Contextual Info: BT151X-800C SCR 23 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high bidirectional blocking

Contextual Info: PMPB15XP 12 V, single P-channel Trench MOSFET 19 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

TRANSISTOR SMD CODE PACKAGE SOT89 4

Contextual Info: PBSS5240X 40 V, 2 A PNP low VCEsat BISS transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:

771-BUK7215-55A118

Contextual Info: DP AK BUK7215-55A N-channel TrenchMOS standard level FET Rev. 02 — 27 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BT139

Abstract: bt139-600 application circuit of BT139 bt139600 bt139 Application bt139 600
Contextual Info: TO -22 0A B BT139-600 4Q Triac Rev. 05 — 24 March 2011 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT78 plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high

"Power Diode"

Contextual Info: TO -22 0A B BYV410-600 Dual enhanced ultrafast power diode Rev. 2 — 5 August 2011 Product data sheet 1. Product profile 1.1 General description Dual enhanced ultrafast power diode in a SOT78 TO-220AB plastic package. 1.2 Features and benefits  High thermal cycling performance

BT138-600

Contextual Info: BT138-600 4Q Triac 2 August 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT78 TO-220AB plastic package intended for use in applications requiring high bidirectional transient and blocking voltage

1PS76SB10

Abstract: nxp ordering information MIFARE DESFire sod323 wave soldering
Contextual Info: 1PS76SB10 Schottky barrier single diode 18 July 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD323 very small Surface-Mounted Device SMD plastic package.

bt137-600

Abstract: IT-201 bt137 nxp bt137 600
Contextual Info: TO -22 0A B BT137-600 4Q Triac Rev. 5 — 25 March 2011 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications.

DIODE BAT86 replacement

Abstract: bat86
Contextual Info: BAT86 Schottky barrier single diode 25 July 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a hermetically-sealed subminiature SOD68 DO-34 package. The diode

Contextual Info: TO -2 20A C BYW29E-200 Ultrafast power diode Rev. 5 — 20 March 2012 Product data sheet 1. Product profile 1.1 General description Ultrafast power diode in a SOD59 2-lead TO-220AC plastic package. 1.2 Features and benefits  Fast switching  Low thermal resistance

Contextual Info: LF PA K 56 PSMN3R0-30YLD N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

Contextual Info: SO T2 23 PBSS5360Z 60 V, 3 A PNP low VCEsat BISS transistor 19 February 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

Electrohydraulic Power Steering

Abstract: A240D
Contextual Info: BUK7E1R9-40E N-channel TrenchMOS standard level FET 5 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high

Contextual Info: D2 PA K BUK768R1-40E N-channel TrenchMOS standard level FET Rev. 1.1 — 10 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high

Contextual Info: BUK9637-100E N-channel TrenchMOS logic level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high

Contextual Info: TYN20X-800T SCR 23 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring very high inrush current

Contextual Info: PSMN1R8-40YLC N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and

triac bt138x

Abstract: BT138X BT138X-600F
Contextual Info: BT138X-600F 4Q Triac 27 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT186A TO-220F "full pack" plastic package intended for use in applications requiring high bidirectional transient and

BT138X

Abstract: triac bt138x
Contextual Info: BT138X-800F 4Q Triac 2 August 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT186A TO-220F "full pack" plastic package intended for use in applications requiring high bidirectional transient and

B686

Contextual Info: BTA312B-800B 3Q Hi-Com Triac 4 October 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated high commutation three quadrant triac in a SOT404 D2PAK surface mountable plastic package intended for use in circuits where high static and dynamic dV/