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    BT138-800G

    Abstract: No abstract text available
    Text: BT138-800G 4Q Triac 27 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT78 TO-220AB plastic package intended for use in applications requiring high bidirectional transient and blocking voltage


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    PDF BT138-800G O-220AB) BT138-800G

    Untitled

    Abstract: No abstract text available
    Text: BT152X-400R SCR 26 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring very high inrush current


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    PDF BT152X-400R OT186A O-220F)

    PSMN4

    Abstract: No abstract text available
    Text: TO -2 20F PSMN4R6-100XS N-channel 100V 4.6 mΩ standard level MOSFET in TO220F SOT186A Rev. 1 — 3 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial,


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    PDF PSMN4R6-100XS O220F OT186A) PSMN4

    capacitive discharge ignition

    Abstract: No abstract text available
    Text: BT151X-800C SCR 23 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high bidirectional blocking


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    PDF BT151X-800C OT186A O-220F) capacitive discharge ignition

    Untitled

    Abstract: No abstract text available
    Text: PMPB15XP 12 V, single P-channel Trench MOSFET 19 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


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    PDF PMPB15XP DFN2020MD-6 OT1220)

    TRANSISTOR SMD CODE PACKAGE SOT89 4

    Abstract: No abstract text available
    Text: PBSS5240X 40 V, 2 A PNP low VCEsat BISS transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:


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    PDF PBSS5240X PBSS4240X. TRANSISTOR SMD CODE PACKAGE SOT89 4

    771-BUK7215-55A118

    Abstract: No abstract text available
    Text: DP AK BUK7215-55A N-channel TrenchMOS standard level FET Rev. 02 — 27 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


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    PDF BUK7215-55A 771-BUK7215-55A118 BUK7215-55A

    BT139

    Abstract: bt139-600 application circuit of BT139 bt139600 bt139 Application bt139 600
    Text: TO -22 0A B BT139-600 4Q Triac Rev. 05 — 24 March 2011 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT78 plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high


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    PDF BT139-600 771-BT139-600127 BT139-600 BT139 application circuit of BT139 bt139600 bt139 Application bt139 600

    "Power Diode"

    Abstract: No abstract text available
    Text: TO -22 0A B BYV410-600 Dual enhanced ultrafast power diode Rev. 2 — 5 August 2011 Product data sheet 1. Product profile 1.1 General description Dual enhanced ultrafast power diode in a SOT78 TO-220AB plastic package. 1.2 Features and benefits  High thermal cycling performance


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    PDF BYV410-600 O-220AB) 771-BYV410-600127 BYV410-600 "Power Diode"

    BT138-600

    Abstract: No abstract text available
    Text: BT138-600 4Q Triac 2 August 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT78 TO-220AB plastic package intended for use in applications requiring high bidirectional transient and blocking voltage


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    PDF BT138-600 O-220AB) BT138-600

    1PS76SB10

    Abstract: nxp ordering information MIFARE DESFire sod323 wave soldering
    Text: 1PS76SB10 Schottky barrier single diode 18 July 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD323 very small Surface-Mounted Device SMD plastic package.


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    PDF 1PS76SB10 OD323 AEC-Q101 1PS76SB10 nxp ordering information MIFARE DESFire sod323 wave soldering

    bt137-600

    Abstract: IT-201 bt137 nxp bt137 600
    Text: TO -22 0A B BT137-600 4Q Triac Rev. 5 — 25 March 2011 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications.


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    PDF BT137-600 771-BT137-600 BT137-600 IT-201 bt137 nxp bt137 600

    DIODE BAT86 replacement

    Abstract: bat86
    Text: BAT86 Schottky barrier single diode 25 July 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a hermetically-sealed subminiature SOD68 DO-34 package. The diode


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    PDF BAT86 DO-34) DIODE BAT86 replacement bat86

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20A C BYW29E-200 Ultrafast power diode Rev. 5 — 20 March 2012 Product data sheet 1. Product profile 1.1 General description Ultrafast power diode in a SOD59 2-lead TO-220AC plastic package. 1.2 Features and benefits  Fast switching  Low thermal resistance


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    PDF BYW29E-200 O-220AC)

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PSMN3R0-30YLD N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


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    PDF PSMN3R0-30YLD LFPAK56 LFPAK56

    Untitled

    Abstract: No abstract text available
    Text: SO T2 23 PBSS5360Z 60 V, 3 A PNP low VCEsat BISS transistor 19 February 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS5360Z OT223 SC-73) PBSS4360Z. AEC-Q101

    Electrohydraulic Power Steering

    Abstract: A240D
    Text: BUK7E1R9-40E N-channel TrenchMOS standard level FET 5 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


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    PDF BUK7E1R9-40E OT226 Electrohydraulic Power Steering A240D

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK768R1-40E N-channel TrenchMOS standard level FET Rev. 1.1 — 10 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


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    PDF BUK768R1-40E OT404

    Untitled

    Abstract: No abstract text available
    Text: BUK9637-100E N-channel TrenchMOS logic level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


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    PDF BUK9637-100E OT404

    Untitled

    Abstract: No abstract text available
    Text: TYN20X-800T SCR 23 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring very high inrush current


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    PDF TYN20X-800T OT186A O-220F)

    Untitled

    Abstract: No abstract text available
    Text: PSMN1R8-40YLC N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and


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    PDF PSMN1R8-40YLC

    triac bt138x

    Abstract: BT138X BT138X-600F
    Text: BT138X-600F 4Q Triac 27 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT186A TO-220F "full pack" plastic package intended for use in applications requiring high bidirectional transient and


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    PDF BT138X-600F OT186A O-220F) triac bt138x BT138X BT138X-600F

    BT138X

    Abstract: triac bt138x
    Text: BT138X-800F 4Q Triac 2 August 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT186A TO-220F "full pack" plastic package intended for use in applications requiring high bidirectional transient and


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    PDF BT138X-800F OT186A O-220F) BT138X triac bt138x

    B686

    Abstract: No abstract text available
    Text: BTA312B-800B 3Q Hi-Com Triac 4 October 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated high commutation three quadrant triac in a SOT404 D2PAK surface mountable plastic package intended for use in circuits where high static and dynamic dV/


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    PDF BTA312B-800B OT404 B686