COOLING SYSTEM SC59 Search Results

smc diode

Contextual Info: SOLDER STENCIL GUIDELINES pattern of the opening in the stencil for the drain pad is not critical as long as it allows approximately 50% of the pad to be covered with paste. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads.

motorola M1MA151W

Contextual Info: MOTOROLA Order this document by M1MA151WKT1/D SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diodes M1MA151WKT1 M1MA152WKT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59

sot 223 marking code AH

Abstract: ah sot223
Contextual Info: NUD3112 Integrated Relay, Inductive Load Driver This device is used to switch inductive loads such as relays, solenoids incandescent lamps, and small DC motors without the need of a free−wheeling diode. The device integrates all necessary items such as the MOSFET switch, ESD protection, and Zener clamps. It

nud4001

Abstract: NUD4001DR2 SMD310
Contextual Info: NUD4001D Product Preview Constant Current LED Driver This device is designed to replace discrete solutions for driving LEDs in low voltage DC applications 5V, 12V or 24V. An external resistor allows the circuit designer to set the drive current for different

UN2211T1

Abstract: 2214T
Contextual Info: Order this data sheet by MUN2211T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor TVansistor NPN Silicon Surface Mount TVansistor With M onolithic Bias Resistor N etw ork M UN2211T1 M UN2212T1 M UN2213T1 M UN2214T1 This new series of digital transistors is designed to replace a single device and

motorola diode marking code

Contextual Info: Order this data sheet by M1MA141WAT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Com m on A n ode Silico n Dual S w itc h in g Diode M1MA141WAT1 M1MA142WAT1 Motorola Preferred Devices This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra

Contextual Info: MSA1162GT1, MSA1162YT1 General Purpose Amplifier Transistors PNP Surface Mount • Moisture Sensitivity Level: 1 • ESD Rating: TBD http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage

Contextual Info: MSC2712GT1 General Purpose Amplifier Transistor NPN Surface Mount • Moisture Sensitivity Level: 1 • ESD Rating: TBD http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage

MUN2111T1

Contextual Info: Order this data sheet by MUN2111T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA B ias R e sisto r TVansistor PNP Silicon Surface Mount TVansistor With M onolithic Bias Resistor N etw ork This new series of digital transistors is designed to replace a single device and

Contextual Info: MSC2712GT1, MSC2712YT1 General Purpose Amplifier Transistor NPN Surface Mount • Moisture Sensitivity Level: 1 • ESD Rating: TBD http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage

M1MA152AT1

Contextual Info: MOTOROLA Order this document by M1MA151AT1/D SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is

Contextual Info: MOTOROLA Order this document by M1MA151WAT1/D SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diodes M 1M A 151W A T1 M 1M A 152W A T1 These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59

MMBD201

Abstract: BD201 bd2010 BD301 MMBD2010 318D-03 MMBD101 MMBD2010T1 DIODE WJ SOt23 MMBD3010T1
Contextual Info: MOTOROLA SEMICONDUCTOR — TECHNICAL Order this document bv MMBDIOIOLT1/D DATA MMBDIOIOLTI MMBD2010T~ Switching Diode Pad of the GreenMneTM Portfolio of devices with energy+onsewing traits. This switching diode has the following features: Very Low Leakage s 500 PA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

marking code k4t

Abstract: A151W Q0040 A152W
Contextual Info: MOTOROLA Order this document by M1MA151WKT1/D SEMICONDUCTOR TECHNICAL DATA Common C athode Silicon Dual S w itching Diodes M 1M A151W KT1 M 1M A152W KT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59

318F

Abstract: NUS2401SNT1 SMD310
Contextual Info: NUS2401SNT1 Integrated PNP/NPN Digital Transistors Array This new option of integrated digital transistors is designed to replace a discrete solution array of three transistors and their external resistor bias network. BRTs Bias Resistor Transistors contain a

Contextual Info: MOTOROLA Order this docum ent by M MQA5V6T1/D SEMICONDUCTOR TECHNICAL DATA M M Q A5V6T1 M M Q A 2 0V T 1 5.6 Volt SC-59 Quad M onolithic Common Anode M otorola Preferred Devices Transient Voltage Suppressor for ESD Protection SC-59 QUAD TRANSIENT VOLTAGE SUPPRESSOR

MMBT1010LT1

Abstract: MSD1010T1 SMD310 msd101
Contextual Info: MOTOROLA Order this document by MMBT1010LT1/D SEMICONDUCTOR TECHNICAL DATA  MMBT1010LT1 MSD1010T1 Low Saturation Voltage PNP Silicon Driver Transistors Motorola Preferred Devices Part of the GreenLine Portfolio of devices with energy–conserving traits.

MSD42T1

Abstract: MSD42WT1 SMD310
Contextual Info: MSD42WT1, MSD42T1 Preferred Device NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC-59 packages which are designed for low power surface mount

MMBT1010LT1

Abstract: MSD1010T1 SMD310
Contextual Info: MOTOROLA Order this document by MMBT1010LT1/D SEMICONDUCTOR TECHNICAL DATA  MMBT1010LT1 MSD1010T1 Low Saturation Voltage PNP Silicon Driver Transistors Motorola Preferred Devices Part of the GreenLine Portfolio of devices with energy–conserving traits.

Contextual Info: MMBT1010LT1 Low Saturation Voltage PNP Silicon Driver Transistors Part of the GreenLine Portfolio of devices with energy−conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purpose driver applications. This device is housed in

Contextual Info: MOTOROLA Order this document by M1MA151WKT1/D SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diodes M1MA151WKT1 M1MA152WKT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59

Contextual Info: ON Semiconductort MSD602-RT1 NPN General Purpose Amplifier Transistor Surface Mount ON Semiconductor Preferred Device 3 MAXIMUM RATINGS TA = 25°C 2 Symbol Value Unit Collector–Base Voltage V(BR)CBO 60 Vdc Collector–Emitter Voltage V(BR)CEO 50 Vdc Emitter–Base Voltage

SC2295-BT1

Abstract: marking code transistor HK
Contextual Info: MOTOROLA Order this document by MSC2295-BT1/D SEMICONDUCTOR TECHNICAL DATA NPN RF Am plifier Transistors Surface Mount MSC2295-BT1 MSC2295-CT1 COLLECTOR Motorola Preferred Devices 3 2 1 BASE EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit C ollector-B ase Voltage

Contextual Info: ON Semiconductort MSD601-RT1* MSD601-ST1 NPN General Purpose Amplifier Transistors Surface Mount *ON Semiconductor Preferred Device 3 2 MAXIMUM RATINGS TA = 25°C 1 Symbol Value Unit Collector–Base Voltage V(BR)CBO 60 Vdc Collector–Emitter Voltage V(BR)CEO