COPPER WIREBONDED DEVICES Search Results

Contextual Info: Exclusive Technology Feature ISSUE: March 2012 Failure Analysis On Power MOSFETs With Copper Wire Bonds by Huixian Wu, Arthur Chiang, and David Le, Vishay Siliconix, Santa Clara, Calif. Copper wire bonds are being used increasingly in microelectronic components as a less expensive alternative to

ipc 9704

Abstract: IPC-9702 strain gage test ipc 9702 FR4 1.6mm substrate ansys darveaux CP-01011-1 solder joint IPC9702 strain rosette
Contextual Info: MODELING AND EXPERIMENTAL CORRELATION OF BGA SOLDER JOINTS UNDER PCB BENDING Anurag Bansal, Yuan Li, and Vadali Mahadev Altera Corporation 101 Innovation Drive M/S 4101, San Jose, CA 95134, USA abansal@altera.com ABSTRACT This study addresses the effects of varying configurations in

SN62MP100AGS90

Abstract: SN62MP100 SN62 100C copper wirebonded devices
Contextual Info: High frequency DC:DC power conversion: The influence of package parasitics Mark Pavier*, Andrew Sawle*, Arthur Woodworth*, Ralph Monteiro*, Jason Chiu*, Carl Blake* * International Rectifier, Holland Road, Hurst Green, Surrey, RH8 9BB, UK * International Rectifier, 233 Kansas St., El Segundo, CA, 90245 USA

Contextual Info: DirectFET  - A Proprietary New Source Mounted Power Package for Board Mounted Power by Andrew Sawle, Martin Standing, Tim Sammon & Arthur Woodworth, International Rectifier, Oxted, Surrey. England Abstract This paper will present a new power semiconductor

parallel connection of MOSFETs

Contextual Info: DirectFET  - A Proprietary New Source Mounted Power Package for Board Mounted Power by Andrew Sawle, Martin Standing, Tim Sammon & Arthur Woodworth, International Rectifier, Oxted, Surrey. England As Presented at PCIM 2001 Abstract This paper will present a new power semiconductor

SD57045

Abstract: CAPACITOR 33PF AN1224 40w resistor hf amplifier for transformer
Contextual Info: AN1224 APPLICATION NOTE LDMOS RF POWER TRANSISTORS FOR FM BROADBOARD APPLICATION Ahmed Mimouni 1. ABSTRACT LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher gain, efficiency,

CAPACITOR 33PF

Abstract: SD57045 AN1224 hf amplifier for transformer 40w resistor 1000 watt ferrite transformer ELECTROLYTIC capacitor, .10uF 50V 30mils
Contextual Info: AN1224 APPLICATION NOTE LDMOS RF POWER TRANSISTORS FOR FM BROADBOARD APPLICATION Ahmed Mimouni 1. ABSTRACT LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher gain, efficiency,

AN-1126

Abstract: AN-1205 land pattern BGA 0.75 TMCL ACLV MO-151 fbga Substrate design guidelines bga Shipping Trays pcb warpage after reflow Epoxy, glass laminate gold embrittlement
Contextual Info: Table of Contents Introduction . 2 Package Overview . 3

FPD3000P100

Abstract: phemt FPD1500P100
Contextual Info: FPD1500P100 1W PACKAGED POWER PHEMT • FEATURES ♦ 29.5 dBm Linear Output Power ♦ 18 dB Power Gain at 2 GHz ♦ 10.5 dB Maximum Stable Gain at 10 GHz ♦ 39 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz • DESCRIPTION AND APPLICATIONS The FPD1500P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility

FPD3000P100

Abstract: FPD750P100
Contextual Info: FPD750P100 0.5W PACKAGED POWER PHEMT • FEATURES ♦ 26.5 dBm Linear Output Power ♦ 18.5 dB Power Gain at 2 GHz ♦ 11.5 dB Maximum Stable Gain at 10 GHz ♦ 36 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz • DESCRIPTION AND APPLICATIONS The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor

SD57045

Abstract: AN1224
Contextual Info: AN1224 Application note Evaluation board using SD57045 LDMOS RF transistor for FM broadcast application Introduction LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher

BGA 256 PACKAGE power dissipation

Abstract: capacitance in BGA package BGA 256 PACKAGE thermal resistance bga Crack Intel BGA Solder
Contextual Info: Technical Notes December 8, 1997 Revision 1.0 THERMAL, ELECTRICAL AND MECHANICAL CONSIDERATIONS IN APPLYING BGA TECHNOLOGY TO A DESIGN ABSTRACT This document briefly discusses the thermal, mechanical and electrical design considerations associated with using ball-grid array components.

FPD3000P100

Contextual Info: FPD3000P100 2W PACKAGED POWER PHEMT • FEATURES ♦ 32.5 dBm Linear Output Power ♦ 17 dB Power Gain at 2 GHz ♦ 9.5 dB Maximum Stable Gain at 10 GHz ♦ 42 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz • DESCRIPTION AND APPLICATIONS The FPD3000P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility

so8 ceramic

Abstract: AN1233 M243 M250 so8 Wire bond
Contextual Info: AN1233 APPLICATION NOTE LDMOS PACKAGES Serge Juhel 1. ABSTRACT LDMOS technology recently implemented at ST is an important step forwards, combining technological and environmental progress. In the basic LDMOS structure figure 1 , a p-epitaxial layer is grown on an

LDMOS

Abstract: 65-nm AN1233 M243 M250
Contextual Info: AN1233 APPLICATION NOTE LDMOS PACKAGES Serge Juhel 1. ABSTRACT LDMOS technology recently implemented at ST is an important step forwards, combining technological and environmental progress. In the basic LDMOS structure figure 1 , a p-epitaxial layer is grown on an

500a mosfet

Abstract: pavi
Contextual Info: Current Handling and Thermal Considerations in a High Current Semiconductor Switch Package Pamela Dugdale and Arthur Woodworth International Rectifier GB Holland Road, Hurst Green Oxted, Surrey RH8 9BB, UK Abstract - This paper presents a discussion of the way in which a

MOSFET VRM

Abstract: IR140CSP IRF6604 100C IRF6607 back Tunnel diode DirectFet
Contextual Info: DirectFETTM Power MOSFET Packaging Technology Enables Discrete Multiphase Converter Design Capable of up to 2MHz/phase Operation Ralph Monteiro, Carl Blake and Jason Chiu International Rectifier 233 Kansas Street, El Segundo, CA 90245 as presented at PCIM China, March 2003

act30bht

Abstract: 13003 transistor power supply circuits 13003 MOSFET transistor ACT30BHT-A ACT30AHT-A act30aht ACT30 flyback 13003 act30bh act30 application
Contextual Info: Datasheet Rev 2, 5/2005 ACT30 ACT30 HIGH PERFORMANCE OFF-LINE CONTROLLER ActiveSwitcherTM IC Family FEATURES GENERAL DESCRIPTION Lowest Total Cost Solution 0.15W Standby Power Emitter Drive Allows Safe NPN Flyback Use Hiccup Mode Short Circuit Current Mode Operation

CDA 194

Abstract: jedec mo-142 footprint jedec ms-024 D2863-77 leadframe C7025 ALJ- 1300 footprint WSON leadframe Cu C7025 MO-052 MO-108
Contextual Info: ‹ Chapter 2 Package Design CHAPTER 2 PACKAGE DESIGN Flammability Rating Oxygen Index Fine-Pitch Ball Grid Array Leadframe Packages Packages and Packing Methodologies Handbook 17 Oct 2008 2-1 ‹ Chapter 2 Package Design FLAMMABILITY RATING The UL Rating for all Spansion products is 94 V-0.

act30bht

Abstract: 13003 transistor power supply circuits ACT30BHT-A 13003 MOSFET transistor ACT30AHT-A 13002 and 13003 power transistor act30b E 13003 TRANSISTOR npn transistors 400V low power to92 flyback 13003
Contextual Info: Datasheet Rev 2, 5/2005 ACT30 ACT30 HIGH PERFORMANCE OFF-LINE CONTROLLER ActiveSwitcherTM IC Family FEATURES GENERAL DESCRIPTION Lowest Total Cost Solution 0.15W Standby Power Emitter Drive Allows Safe NPN Flyback Use Hiccup Mode Short Circuit Current Mode Operation

D2863-77

Abstract: Plastic Encapsulate Diodes bond wire copper hermetic packages PCB land circuit for wind mill footprint plcc 208 cmos methane SENSOR land pattern PQFP 208
Contextual Info: GENERAL INFORMATION Packages INTRODUCTION P lastic surface-mount package designs were developed in the late 1970s in answer to the demand for costeffective solutions to achieving greater board density without sacriÞcing reliability or functionality. Recent developments in these

C0603C100J5GAC

Abstract: C0603C103K5RAC C0603C221J5GAC SLX-2043
Contextual Info: Preliminary Product Description SLX-2043 The Sirenza Microdevices’ SLX-2043 is a low noise amplifier module operating in the 1700 - 2200 MHz frequency band. This device has been optimized to serve high linearity basestation applications where a high intercept point is

JEDEC Matrix Tray outlines

Abstract: IspLSI PCMCIA copper bond wire micro semi BGD35
Contextual Info: Packages INTRODUCTION Vantis provides its programmable logic devices PLDs in a wide range of packages. These packages provide benefits such as high power dissipation capability, small footprint, and high I/O. This section provides details about the packages that Vantis supplies.

footprint jedec MS-026 TQFP

Abstract: PL84 tube AS 108-120 x-ray tube datasheet 144 QFP body size drawing of a geometrical isometric sheet superior Natural gas engines x-ray tube datasheet 026 SMT, FPGA FINE PITCH BGA 456 BALL mo-047 texas
Contextual Info: Packages INTRODUCTION Vantis provides its programmable logic devices PLDs in a wide range of packages. These packages provide benefits such as high power dissipation capability, small footprint, and high I/O. This section provides details about the packages that Vantis supplies.