TAL ATS

Abstract: IC SEM 2004 IC SEM 2005 UNL 2003 TOSHIBA cosmoram LPD-D
Contextual Info: COSMORAM Ver. 2.0 Sep./2004 1 About COSMORAM „ Common Specification for Mobile RAM z Agreed by Fujitsu, NEC Electronics and Toshiba z 1st Announcement in March 14, 2002 z Standard Body ¾ Function Truth Table ¾ Configuration Register Definition ¾ Basic Timing Diagram

st 9318

Abstract: cosm NEC Electronics nec ram M17161EJ2V0PF
Contextual Info: COSMORAM About COSMORAM „ Common Specification for Mobile RAM z Agreed by Fujitsu, NEC Electronics and Toshiba z 1st Announcement in March 14, 2002 z Standard Body ¾ Function Truth Table ¾ Configuration Register Definition ¾ Basic Timing Diagram ¾ Pin Assignment

IC SEM 2004

Abstract: IC SEM 2005 cosmoram NTS 10 SEM 2006 TOSHIBA roadmap Memory Selection Guide Toshiba
Contextual Info: COSMORAM Rev. 2.0 Sep./2004 1 About COSMORAM „ Common Specification for Mobile RAM z Agreed by Fujitsu, NEC Electronics and Toshiba z 1st Announcement in March 14, 2002 z Standard Body ¾ Function Truth Table ¾ Configuration Register Definition ¾ Basic Timing Diagram

cosmoram synchronous

Abstract: MB82DBS02163E-70L
Contextual Info: FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11450-2E TM 32 Mbit Mobile FCRAM 1.8 V, Burst Mode & Page Mode MB82DBS02163E-70L FEATURES • • • • Pseudo SRAM with Asynchronous / Synchronous SRAM Interface COSMORAM Common Specifications for Mobile RAM Revision 2

cosmoram synchronous

Contextual Info: FUJITSU MICROELECTRONICS INTRODUCTION SHEET NP05-11462-1E TM 32 Mbit Mobile FCRAM 1.8 V, Burst Mode & Page Mode MB82DBS02163F-70L FEATURES • • • • Pseudo SRAM with Asynchronous / Synchronous SRAM Interface COSMORAM Common Specifications for Mobile RAM Revision 2

lpddr

Abstract: TRCD3C 256-MBIT
Contextual Info: New Products MB82DDS08314A MB82DBS08314A 256M-bit Mobile FCRAM TM Memories for Mobile Applications MB82DDS08314A/MB82DBS08314A 256M-bit Mobile FCRAM with 1.8V power supply voltage conforming to COSMORAM specification. These products adopt DDR burst mode and SDR burst

71WS256NC0BAIAU

Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics

COSMO MARKING

Abstract: S71WS128JB0 S71WS128JC0 S71WS256JC0 WS128J cosmo MARKING CODE COSMO DEVICE MARKING COSMO DEVICE MARKING DATE cosmoram synchronous
Contextual Info: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM ADVANCE DATASHEET Distinctive Characteristics MCP Features „ „ Power supply voltage of 1.7 to 1.95V

4a2g

Abstract: L8212 S71WS-J
Contextual Info: S71WS-J Based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW LQGLFDWHV VWDWHV WKH FXUUHQW WHFKQLFDO

Contextual Info: S71WS-J Based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW LQGLFDWHV VWDWHV WKH FXUUHQW WHFKQLFDO

Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications

TBA 616 datasheet

Abstract: SA047-SA050 sample code read and write flash memory spansion wireless design guide 13th S29WS064N S29WS128N S29WS256N S29WS-N S75WS256NDF S75WS-N
Contextual Info: S75WS256Nxx Based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Mb (8M/4M x 16-Bit) CosmoRAM and 512 Mb ( 32M x 16-bit) Data Storage Data Sheet PRELIMINARY Notice to Readers: This document states the current technical specifications

Contextual Info: S75WS256Nxx Based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Mb (8M/4M x 16-Bit) CosmoRAM and 512 Mb ( 32M x 16-bit) Data Storage Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV

Contextual Info: MB82DBS02163C MB82DBS04163B New Products Cellular Phone Application Specific Memory 32M-bit/64M-bit Burst Mode Mobile FCRAMTM MB82DBS02163C/MB82DBS04163B FUJITSU has unveiled a new pair of enhanced 32M-bit and 64M-bit Mobile FCRAMTM devices that adopt burst mode read/write operations in compliance with

s29gl032n90

Abstract: MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11
Contextual Info: covPG00-00071e.fm 1 ページ ２００７年５月１０日 木曜日 午前１１時２９分 For further information please contact: Japan FUJITSU LIMITED Electronic Devices Business Unit Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,

cosmoram

Abstract: cosmoram synchronous MB82DBS08164C-70L
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11435-1E MEMORY Mobile FCRAMTM CMOS 128 M Bit 8 M wordx16 bit Mobile Phone Application Specific Memory MB82DBS08164C-70L • DESCRIPTION The FUJITSU MB82DBS08164C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-11454-1E MEMORY Mobile FCRAMTM CMOS 128 M Bit 8 M wordx16 bit Mobile Phone Application Specific Memory MB82DBS08164D-70L • DESCRIPTION The FUJITSU MICROELECTRONICS MB82DBS08164D is a CMOS Fast Cycle Random Access Memory

CosmoRAM Revision 4

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-11462-1E MEMORY Mobile FCRAMTM CMOS 32M-Bit 2M-word x 16-bit Mobile Phone Application Specific Memory MB82DBS02163F70L • DESCRIPTION The MB82DBS02163F is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-11448-1E MEMORY Mobile FCRAMTM CMOS 64M-Bit 4M-word x 16-bit Mobile Phone Application Specific Memory MB82DBS04164E-70L • DESCRIPTION The MB82DBS04164E is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static

BL 3102

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-11448-2E MEMORY Mobile FCRAMTM CMOS 64M-Bit 4M-word x 16-bit Mobile Phone Application Specific Memory MB82DBS04164E-70L • DESCRIPTION The MB82DBS04164E is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static

S29GL128P90

Abstract: STM32F10xFWLib STM32F10xxx AN2784 numonyx oneNand flash S29GL128P AN2784 fsmc S29GL128P90FFIR2 M29W128GL70ZA6E NAND512W3A2B
Contextual Info: AN2784 Application note Using the high-density STM32F10xxx FSMC peripheral to drive external memories Introduction This application note describes how to use the High-density STM32F10xxx FSMC flexible static memory controller peripheral to drive a set of external memories. To that aim, it gives

S29GL128P90

Abstract: is61wv51216 STM32F10x_StdPeriph_Lib M29W128xx70 S29GL128P S29GL128P90FFIR2 fsmc numonyx oneNand flash STM32F10xCDE nand512w3a2b
Contextual Info: AN2784 Application note Using the high-density STM32F10xxx FSMC peripheral to drive external memories Introduction This application note describes how to use the High-density STM32F10xxx FSMC flexible static memory controller peripheral to drive a set of external memories. To that aim, it gives

Connecting the FSMC to the LCD Intel

Abstract: AM-240320L8TNQW00H ILI9320 Ampire LCD AM-240320L8TNQW00H TFT LCD Connecting the FSMC to the LCD nand512w3a2cnb intel 8080 AN2790 Color TFT LCD Module intel 8080
Contextual Info: AN2790 Application note TFT LCD interfacing with the high-density STM32F10xxx FSMC Introduction Interactive interfaces are more and more integrated into many applications such as medical devices, process control, mobile phones and other hand-held devices. These interfaces are

S29JL032H70

Contextual Info: FUJITSU MICROELECTRONICS PRODUCT GUIDE 2009.10 Product Guide [ ASSP•Memory•ASIC ] PG00-00091-3E Technical Documentation of Electronic Devices DATA BOOK PRODUCT GUIDE DVD (GENERAL) DATA SHEET MANUAL FUJITSU SEMICONDUCTOR DATA SHEET Semiconductor Data Book