COX 87 Search Results

PDC20269

Abstract: Broadcom switch cli raid fly killer Broadcom cli PDC20268 MPC8220 serial port bluetooth frame stucture Fusion MPT sis900 93C39-1
Contextual Info: Freescale Semiconductor Application Note Document Number: AN3252 Rev. 0, 05/2006 MontaVista Linux Professional Edition 3.1 Guide for MPC8220 i by: Ian Cox TSPG/MCD/CIO/Systems & Applications Engineering This application note shows how to perform a typical

SN74GTL1655

Abstract: SN74GTLPH1655 SN74GTLPH1655DGGR Higgs 3
Contextual Info: Application Report SZZA016B - June 2001 Basic Design Considerations for Backplanes Shankar Balasubramaniam, Ramzi Ammar, Ernest Cox, Steve Blozis, and Jose M. Soltero Standard Linear & Logic ABSTRACT This application report describes design issues relevant to the parallel backplanes typically

transmission line theory

Abstract: backplane design GTL16612 GTL16622A GTLP16612 SN74GTL16622A backplane Layout power supply
Contextual Info: Backplane Design with GTL+ Shankar Balasubramaniam, Ramzi Ammar, Ernest Cox A demonstration system that depicts the performance of GTL+ IC’s in a backplane is explained in this paper. The paper uses the Texas Instruments GTL16622A as an example in the design of the physical

Contextual Info: h ÿ 'y y X £ /Transistors UMH6N IMH6A UMH6N/IMH6A 7 < V l/-T 7 Isolated Mini-Mold Device < > / ^ î - ^ K 7 < I ^/Inverter Driver • i'fJfê \liÈ 0/D im ensions Unit : mm 1) UMT (SC-70), SMT (SC-59) t l Ü f ÿ f l l ic 2 m COx v 9 JUS -7 > V IM H 6A

BUZ12

Abstract: SIPMOS application note depletion MOSFET SPICE n mosfet depletion note BUZ12AL BSP149 equivalent BUZ MOSFET kp1022 SIPMOS BUZ41A
Contextual Info: Power Semiconductor Application Note AN_PSM1e SPICE Models for SIPMOS Components Purpose: Author: Clarification of SIPMOS - SPICE models V1.0 Dr. P. Türkes, Dr. M. März, P. Nance 1 Introduction Powerful new-generation personal computers with a fast main processor and a math-coprocessor

BSP149 equivalent

Abstract: DC chopper n mosfet depletion pspice model parameters BUZ MOSFET kp1022 BSP149 depletion mode mosfet 100 MHz NMOS depletion pspice model SIPMOS SPICE BSS SPICE
Contextual Info: SPICE Models for SIPMOS Components Version: Purpose: Author: 3.1 Clarification of SIPMOS - SPICE models Dr. P. Türkes, Dr. M. März 1 Introduction Powerful new-generation personal computers with a fast main processor and a math-coprocessor allow circuit developers to benefit inexpensively from CAD methods, since such computers make it

CQX31

Abstract: LIGHT DIODE AI CQX32
Contextual Info: CQX 31 • CQX 32 Rot/grün- und rot/gellbleuchtende Lumineszenzdioden GaAsP und GaP Red/green and red/yeliow Light Emitting Diodes (GaAsP and GaP) Anwendung: Zw eifarbige Anzeigen in hochkom m erziellen G eräten Application: Two co lo u r indication in high com m ercial equipm ents

D1876

Abstract: NP100P04PDG NP100P06PDG NP100P06PLG NP36P04KDG 19E-9 m0565 NP50P06KDG NP83P06PDG NP36P06SLG
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

VARIABLE RESISTOR FOOTPRINTS

Abstract: Si4850DY VJ0805Y224KXX C4532X7R1H475M C5750X7R2A475M CMSH3-60M LM340 LM3430 Si4850EY VJ0805Y224KXXA
Contextual Info: National Semiconductor Application Note 1529 Chris Richardson August 2007 Specifications Of The Board Testing The Converter The Evaluation Board has been designed for testing of various circuits using the LM3430 boost regulator controller. A complete schematic for all the components is shown in Figure

VARIABLE RESISTOR FOOTPRINTS

Abstract: C5750X7R2A475M Si4850DY LM5022 C3216X7R1E105K C4532X7R1H475M CMSH2-60M Si4850EY SLF12575T-330M3R2 c5750x
Contextual Info: National Semiconductor Application Note 1557 Chris Richardson May 22, 2008 Specifications Of The Board Enabling The Converter The Evaluation Board has been designed for testing of various circuits using the LM5022 boost regulator controller. A complete schematic for all the components is shown in Figure

AN1529

Abstract: C5750X7R2A475M C3216X7R1E105K C4532X7R1H475M CMSH3-60M LM3430 Si4850DY Si4850EY VJ0805Y224KXXAT AN-1529
Contextual Info: 美国国家半导体公司 应用注释 1529 Chris Richardson 2007年1月 电路板的规格 测试转换器 设计该评估板的目的在于使用LM3430升压稳压控制器来测 图4 所示为效率测量的连接模块图。用于输入和输出的连接

SBR6050

Abstract: SBR6040 SBR6045 SBR8035 SBR8050
Contextual Info: SBR8035 thru SBR8050 I n ter n a tio n a l S e m ic o n d u c to r , I n c . 85 Amp SCHOTTKY POWER RECTIFIER r Dim A B C D E F G H J K M N I \ ISI Part # - . 42 7 . 1 15 - . 22 0 - Max . 6 87 . 7 93 1.000 . 4 47 . 2 00 . 4 50 . 2 49 . 3 75 Min 17.19 - 10.84

VARIABLE RESISTOR FOOTPRINTS

Abstract: C3225X5R1E226M SCHEMATIC DIAGRAM POWER SUPPLY 12v 5A AN-1446 HAT2165H HAT2198R LM3495 MBR0530 RLF12560T-1R0N140 30V variable tracking regulator
Contextual Info: National Semiconductor Application Note 1446 Chris Richardson March 2006 Specifications Of The Board Enabling The Converter The Evaluation Board has been designed for testing of various circuits using the LM3495 buck regulator controller. A complete schematic for all the components is shown in

AN-1439

Abstract: AN1439 E911 LMV112 3MHz-30MHz 1439 National Semiconductor an1439 National Semiconductor an-1439 DEUTSCH RE
Contextual Info: ெࡔࡔॆӷ‫ິࠅ༹ڞ‬ ᆌᆩጀ释 1439 Barry Yuen 2006౎1ሆ ᆅჾ ၎ࢻᆖၚăፕྺᅃ߲ဣཥ‫ڦ‬एጚ้ዓLj޿้ዓ႑ࡽᆌ޿ āā‫ނ‬࿡‫ࢅࣆۉ‬࿮၍߲ටຕጴዺ૙փ܏‫ں‬ण‫߳ׯ‬ዖඇႎ ‫ك‬৫൐ጚඓă৽๟ᄲ൱ߛೕ୲࿘ۨႠĂ‫گ‬၎࿋ሯำࢅ‫گ‬

C3014

Abstract: 0.6 um cmos process
Contextual Info: ISO 9001 Registered Process C3014 CMOS 3µm 5 Volt Single Metal Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage

C3014

Contextual Info: ISO 9001 Registered Process C3014 CMOS 3µm 5 Volt Single Metal Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage

c1027 transistor

Abstract: transistor c1027 C1027 C-1027 transistor npn c1027 transistor equivalent c1027 transistor c1027 equivalent
Contextual Info: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted

C1004

Contextual Info: ISO 9001 Registered Process C1004 CMOS 1.0µm 5 Volt Digital Electrical Characteristics N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Symbol VTN

transistor c1027

Abstract: C1027 c1027 transistor transistor equivalent c1027 C-1027 transistor c1027 equivalent transistor npn c1027 transistor c1027 equivalents
Contextual Info: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted

c1028

Contextual Info: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor

C1028

Abstract: c1028 transistor
Contextual Info: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor

c1027 transistor

Abstract: transistor c1027 C1027 transistor equivalent c1027 transistor c1027 equivalent C-1027
Contextual Info: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted

C1004

Abstract: 07UM
Contextual Info: ISO 9001 Registered Process C1004 CMOS 1.0µm 5 Volt Digital Electrical Characteristics N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Symbol VTN

transistor c1026

Abstract: C1026 C1026 NPN Transistor equivalent transistor C1026 transistor c1026 equivalent c1026 transistor
Contextual Info: ISO 9001 Registered Process C1026 BiCMOS 1.0µm Schottky Diode and Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Minimum Typical 0.50