Content Addressable Memory
Abstract: "Content Addressable Memory" ternary content addressable memory IDT75K52134 Ternary CAM IDT75K62134 idt cam QDR cypress ternary
Text: Product Brief IDT75K52134 IDT75K62134 4.5M and 9M Network Search Engine NSE with QDR Interface To request the full datasheet, please contact your local IDT Sales Representative or call 1-831-754-4555 Introduction Device Description Evolving network speeds require critical functions such as forwarding
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IDT75K52134
IDT75K62134
drw04aa
DSC-6070/00
Content Addressable Memory
"Content Addressable Memory"
ternary content addressable memory
IDT75K52134
Ternary CAM
IDT75K62134
idt cam
QDR cypress
ternary
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Content Addressable Memory
Abstract: ternary content addressable memory QDR cypress "Content Addressable Memory" idt cam IDT75K52134 IDT75K62134 IXP2400 IXP2800 ternary
Text: Product Brief IDT75K52134 IDT75K62134 4.5M and 9M Integrated IP Co-Processors IIPC with QDR Interface To request the full product brief, please contact your local IDT Sales Representative or call 1-831-754-4555 Introduction Device Description Evolving network speeds require critical functions such as forwarding
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IDT75K52134
IDT75K62134
drw04aa
DSC-6070/00
Content Addressable Memory
ternary content addressable memory
QDR cypress
"Content Addressable Memory"
idt cam
IDT75K52134
IDT75K62134
IXP2400
IXP2800
ternary
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Content Addressable Memory
Abstract: "Content Addressable Memory" Ternary CAM ternary content addressable memory
Text: Product Brief IDT75K52134 IDT75K62134 4.5M and 9M Integrated IP Co-Processors IIPC with QDR Interface To request the full product brief, please contact your local IDT Sales Representative or call 1-831-754-4555 Introduction Device Description Evolving network speeds require critical functions such as forwarding
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Original
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PDF
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IDT75K52134
IDT75K62134
drw04aa
DSC-6070/00
Content Addressable Memory
"Content Addressable Memory"
Ternary CAM
ternary content addressable memory
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PD44647186AF5-E22-FQ1-A
Abstract: PD44647366AF5-E25-FQ1-A
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44647094A-A, 44647184A-A, 44647364A-A, 44647096A-A, 44647186A-A, 44647366A-A 72M-BIT QDRTM II+ SRAM 2.0 & 2.5 CLOCK CYCLES READ LATENCY 4-WORD BURST OPERATION Description The μPD44647094A-A and μPD44647096A-A are 8,388,608-word by 9-bit, the μPD44647184A-A and μPD44647186A-A
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PD44647094A-A,
4647184A-A,
4647364A-A,
4647096A-A,
4647186A-A,
4647366A-A
72M-BIT
PD44647094A-A
PD44647096A-A
608-word
PD44647186AF5-E22-FQ1-A
PD44647366AF5-E25-FQ1-A
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44646187A-A 72M-BIT DDR II+ SRAM SEPARATE I/O 2.5 CLOCK CYCLES READ LATENCY 2-WORD BURST OPERATION Description The μPD44646187A-A is 4,194,304-word by 18-bit synchronous double data rate static RAM fabricated with advanced
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PD44646187A-A
72M-BIT
PD44646187A-A
304-word
18-bit
M8E0904E
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PD44647366AF5-E22-FQ1-A
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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M8E0904E
PD44647366AF5-E22-FQ1-A
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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M8E0904E
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Untitled
Abstract: No abstract text available
Text: CY7C1510JV18, CY7C1525JV18 CY7C1512JV18, CY7C1514JV18 72-Mbit QDR -II SRAM 2-Word Burst Architecture Features Configurations • Separate Independent Read and Write Data Ports ❐ Supports concurrent transactions ■ 267 MHz Clock for High Bandwidth ■
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CY7C1510JV18,
CY7C1525JV18
CY7C1512JV18,
CY7C1514JV18
72-Mbit
CY7C1510JV18
CY7C1525JV18
CY7C1512JV18
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CY7C1510JV18
Abstract: CY7C1512JV18 CY7C1514JV18 CY7C1525JV18
Text: CY7C1510JV18, CY7C1525JV18 CY7C1512JV18, CY7C1514JV18 72-Mbit QDR -II SRAM 2-Word Burst Architecture Features Configurations • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 267 MHz clock for high bandwidth ■
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CY7C1510JV18,
CY7C1525JV18
CY7C1512JV18,
CY7C1514JV18
72-Mbit
CY7C1510JV18
CY7C1512JV18
CY7C1510JV18
CY7C1512JV18
CY7C1514JV18
CY7C1525JV18
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CY7C1512JV18
Abstract: CY7C1514JV18 CY7C1525JV18
Text: CY7C1525JV18 CY7C1512JV18 CY7C1514JV18 72-Mbit QDR II SRAM 2-Word Burst Architecture Features Configurations • Separate Independent Read and Write Data Ports ❐ Supports concurrent transactions ■ 267 MHz Clock for High Bandwidth CY7C1525JV18 – 8M x 9
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CY7C1525JV18
CY7C1512JV18
CY7C1514JV18
72-Mbit
CY7C1512JV18
CY7C1514JV18
CY7C1525JV18
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CY7C1512JV18
Abstract: CY7C1514JV18 CY7C1525JV18
Text: CY7C1525JV18 CY7C1512JV18 CY7C1514JV18 72-Mbit QDR II SRAM 2-Word Burst Architecture Features Configurations • Separate Independent Read and Write Data Ports ❐ Supports concurrent transactions ■ 267 MHz Clock for High Bandwidth CY7C1525JV18 – 8M x 9
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CY7C1525JV18
CY7C1512JV18
CY7C1514JV18
72-Mbit
CY7C1512JV18
CY7C1514JV18
CY7C1525JV18
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Untitled
Abstract: No abstract text available
Text: THIS SPEC IS OBSOLETE Spec No: 001-14435 Spec Title: CY7C1525JV18 CY7C1512JV18 CY7C1514JV18, 72-MBIT QDR R II SRAM 2-WORD BURST ARCHITECTURE Sunset Owner: Anuj Chakrapani (AJU) Replaced by: None CY7C1525JV18 CY7C1512JV18 CY7C1514JV18 72-Mbit QDR II SRAM 2-Word Burst
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CY7C1525JV18
CY7C1512JV18
CY7C1514JV18,
72-MBIT
CY7C1514JV18
CY7C1525JV18
CY7C1512JV18
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gs8182q36
Abstract: No abstract text available
Text: GS8182Q18/36D-200/167/133 18Mb Burst of 2 SigmaQuad-II SRAM 165-Bump BGA Commercial Temp Industrial Temp 200MHz–133MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package • Dual Double Data Rate interface
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GS8182Q18/36D-200/167/133
165-Bump
165-bump,
144Mb
200MHz
133MHz
8182Qxx
gs8182q36
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Untitled
Abstract: No abstract text available
Text: GS8182Q18/36D-200/167/133 200MHz–133MHz 1.8 V VDD 1.8 V and 1.5 V I/O 18Mb Burst of 2 SigmaQuad-II SRAM 165-Bump BGA Commercial Temp Industrial Temp SigmaRAM Family Overview Bottom View 165-Bump, 13 mm x 15 mm BGA 1 mm Bump Pitch, 11 x 15 Bump Array JEDEC Std. MO-216, Variation CAB-1
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GS8182Q18/36D-200/167/133
165-Bump
165-bump,
144Mb
200MHz
133MHz
8182Qxx
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Untitled
Abstract: No abstract text available
Text: GS8182T19/37BD-435/400/375/333/300 18Mb SigmaDDR-II+TM Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features • 2.0 Clock Latency • Simultaneous Read and Write SigmaDDR-II Interface • Common I/O bus • JEDEC-standard pinout and package
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GS8182T19/37BD-435/400/375/333/300
165-Bump
165-bump,
818TxxBD
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Untitled
Abstract: No abstract text available
Text: GS8182T19/37BD-435/400/375/333/300 18Mb SigmaDDR-II+TM Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features • 2.0 Clock Latency • Simultaneous Read and Write SigmaDDR-II Interface • Common I/O bus • JEDEC-standard pinout and package
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GS8182T19/37BD-435/400/375/333/300
165-Bump
165-bump,
818TxxBD
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GS818
Abstract: No abstract text available
Text: GS8182T19/37BD-435/400/375/333/300 18Mb SigmaCIO DDR-II+TM Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp 435 MHz–300 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • 2.0 Clock Latency • Simultaneous Read and Write SigmaCIO Interface • Common I/O bus
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GS8182T19/37BD-435/400/375/333/300
165-Bump
165-bump,
818TxxBD
GS818
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RAM32M
Abstract: RAM64X1D SRLC32E RAM128X1D RAM256X1S SRL32 RAM64M ROM64x1 XC6VLX75T ROM256x1
Text: Virtex-6 FPGA Configurable Logic Block User Guide Virtex-6 FPGA CLB [optional] UG364 v1.1 September 16, 2009 [optional] Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development
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UG364
RAM32M
RAM64X1D
SRLC32E
RAM128X1D
RAM256X1S
SRL32
RAM64M
ROM64x1
XC6VLX75T
ROM256x1
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BW110
Abstract: No abstract text available
Text: Preliminary GS8182T19/37BD-450/435/400/375/333/300 18Mb SigmaCIO DDR-II+ Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp 450 MHz–300 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • 2.0 Clock Latency • Simultaneous Read and Write SigmaCIO Interface
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GS8182T19/37BD-450/435/400/375/333/300
165-Bump
165-bump,
GS818Tx36BD-300T.
818TxxBD
BW110
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CV7105
Abstract: No abstract text available
Text: NJM2247A/B mu m If l- NJM2247A/B i, ts ^5 — 7.— A — f >/1? — K (Y , T*To 7 - f y ^ l / 3 > ij, Y, ^ - T .A V R-Y, R-Y, X-<n&WM B-Y hP — =fc B - Y il- t ^ if ib t iS f o K T 'O T f f - t M S C J : U, fcnTtiC L T l ' i t . tt HJH2247ANI/BM • 5 V # .—
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NJM2247A/B
NJM2247A/BlÃ
njm2247am/bm
DMP20
165mV
CV7105
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Untitled
Abstract: No abstract text available
Text: 10 MAT'L NO. ENG NO. 15-24-4557 A -89 81-4 V 4 -LF 9.53 .375 TYP. 0.74 .029 5.08 RECOMMENDED PCB HOLE LAYOUT .200 I V /// /// /M X /, NOTES : 0 2.10 ±0.03 . . 6.98 .275 l"56±0" 10 4X .06 l±.004 I. PLATING POSTPLATE 0 .0 0 2 5 4 /.0 0 0 I00 MIN. TIN
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8981-4P2
PS-8981-4V4/4R
UL94V-0
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d1943g
Abstract: PD1943 PD6120 HPD-61
Text: MOS INTEGRATED CIRCU IT , / ¿ P D 6 1 2 1 „.• D ■T! Pint >Kitsnoiefi aimçmO Î? two or,tOM»ito?Vi art1 tte>' M U L T I- P U R P O S E R EM O T E C O N T R O L T R A N S M IT T E R 1C C M O S LS I D ESCRIPTIO N The ¿¿PD6121 is an infrared remote control transmitter LSI for T V , V C R , stereo components, cassette decks, air con
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uPD6121
WS60-00
bM27525
d1943g
PD1943
PD6120
HPD-61
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uPD6120
Abstract: npd19 KL SN 102 PD1913 Li42 UD1943 ud271 27S9S KL 13 diode UPD6120C102
Text: MOS DIGITAL INTEGRATED CIRCU IT /¿ P D 6 1 2 0 M U L T I- P U R P O S E R E M O T E C O N T R O L T R A N S M IT T E R IC C M O S LSI D ESCRIPTIO N The pPD6120 is an LSI for the transmission of general-purpose, infrared, remote control codes to TV s, V TR s, audio equip
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uPD6120
457sas
/IPD6120
npd19
KL SN 102
PD1913
Li42
UD1943
ud271
27S9S
KL 13 diode
UPD6120C102
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HOA0825-4
Abstract: HOA0825-1 HOA0825-3 HOA0825-2 7N55 6n55 2N55 HOA0825 1T55 5T55
Text: HONEYWELL INC/ MICRO M1E D • 4551330 0013fl75 1 *HONl T - Ml-73 Transmissive With Plastic Encapsulated Components Assemblies Assem blies on this page are based on plastic-encapsulated components from the SEP8506 and SDP8406 device fam ilies. All sensors are phototransistors.
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Ml-73
SEP8506
SDP8406
HOA0825-1
HOA0825-2
HOA0825-3
HOA0825-4
-0-L51
060x0
-0-L55
HOA0825-4
HOA0825-1
HOA0825-3
HOA0825-2
7N55
6n55
2N55
HOA0825
1T55
5T55
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