CR 1201 Search Results

1.25kv dc

Abstract: VR10G N1500
Contextual Info: Disc Ceramic Capacitors Temperature Compensating - Class I Performance Characteristics Measured at Dissipation Factor % Ø= 0.6 ± 0.1 (0.024) (0.004) Tolerance 100 V → 500 V 1kV → 5kV 1.0 MHz @ 1.0 Vrms & 25ºC CR ≤ 30 pF → ≤1/CR + 0.07 CR > 30 pF → ≤ 0.1%

12015323

Contextual Info: DO NOT SCALE H G F E O LO > ~ g O h < tr o 2o cr­ oi oo uî irz ou cr Io HIE IT LU Os< s LUÉ O cr LU o < o < û_ D c B A 7 6 5 A 3 2 DATE SYM REVISION RECORD AUTH 22MR93 A PID DWG CREATED DR CK 930012 RKR TLM 10SE93 Al WAS P E 0 4 0 2 7 4 , REVISED NOTE #1 AND RELEASED

Contextual Info: DO NOT SCALE 7 6 5 7 6 5 H G F E O LO > ~g O h < tr o °D _0 cr­ o i cr oÜîoirz U HOÜ IEJ LU S< OIE » LU£ LU q cr 8 < o < CL D C B A F 4 .9 0 D IA E 5 .0 D IA 4 2 .8 0 PART NO F-+-: 1219 I -+-: L+L 1725 1 0 . 3 H EX HOLE - 4 - — -+ -:1-1—i—L-—

Contextual Info: DO NOT SCALE 8 7 6 5 7 6 5 D H G F E O LO > ~g O h < tr o °D _0 cr­ o i cr oo Ü îirz o O UJ HIE LU OIE S<S LU £ LU q cr 8 < o < CL D C B A z\ 3 A 2 DATE SYM REVISION RECORD AUTH DR CK 28M R95 A RELEASED 9 5 0 0 0 5 RMM RRS 28M R95 B MATL S P E C WAS R 0 0 6 7 5 4 7

spark quencher

Abstract: quencher xe1201 ob-105
Contextual Info: 10S0 S'} CR Networks A range of CR networks spark quenchers suitable for many applicatior requiring protection against inductive loads Approvals - UL. CSA, VD SEM KO, DEMKO, NEMKO : PART NO 105 0 53 Model No W 12001 d ! 170 14 0 711 15 0 Ob 15 0 Db XE 120033 17 5 150 80

SKKL91

Contextual Info: SEMIKRON 15E o INC T -Z S -Z .3 , Thyr stor V rsm Diode V V drm V rrm V V rsm V rrm V 1500 1400 2000 1700 1600 2500 R.M.S. motor ci irrent per phase) Symbol Conditions It r m s ; Ifrms It s m ; Ifsm max. Tvj Tvj ft Tvj Tv) (di/dt)cr (dv/dt)cr Tvj tq Tvj

RTL8139 BootROM

Abstract: RTL8139 reference design realtek rtl8139 programming RTL8139 Circuit RTL8139C REV15 RTL8139CL realtek rtl8139 RTL8129 RTL8139A
Contextual Info: RTL8139C L + REALTEK 3.3V SINGLE CHIP FAST ETHERNET CONTROLLER WITH POWER MANAGEMENT RTL8139C(L)+ 6.32 Transmit Priority Polling Register (TPPoll) . 38 6.33 C+ Command Register (C+CR) . 38 6.34 Receive Descriptor Start Address Register (RDSAR). 39

207691-1

Abstract: 207227-1
Contextual Info: Interconnection Systems Selection Guide 82750 Revised 7-95 CR ZIF Cammed Rectangular, Zero Insertion Force Connector System Product Facts • Modular construction for reliabilty and economy ■ Variety of contacts are available lor broad range of mating

sunon 12vdc fan

Contextual Info: SUNON SPECIFICATION FOR APPROVAL CUSTOMER DESCRIPTION DC BRUSHLESS FAN DIMENSIONS 120X120X38 mm MODEL EEC0382B3-0000-A99 SUNON SPEC. NO. D12012730G-00 CUSTOMER APPROVAL NO. APPROVED BY CUSTOMER AUTHORIZED ¡SiJL DRAWN Apple 12/27 CHECKED APPROVED CW-cr SPEC.NO

EEC0251B3-0000-A99

Abstract: EEC0251B3 fans 120x120x25 MTTF sunon fan
Contextual Info: SUNON SPECIFICATION FOR APPROVAL CUSTOMER DESCRIPTION DC BRUSHLESS FAN DIMENSIONS 120X120X25 mm MODEL EEC0251B3-0000-A99 SUNON SPEC. NO. D12012240G-00 CUSTOMER APPROVAL NO. APPROVED BY CUSTOMER AUTHORIZED Apple CHECKED 9 /8 rtJ Cr¥° V SU N O N W E A L T H

XEB1201

Abstract: spark quencher quencher SO 1201 120033 CR 1201 XEB12001 W1201
Contextual Info: CR NETWORKS XE-XEB SERIES Ö ß i- S 0! 3 _ XE Series VDE, SEM KO , DEMKO, NEMKO, UL AND CSA APPROVED Fig 1 P~ @ SPARK QUENCHERS FOR 250V AC # TYPE XE These units have been approved under the safety standards enforced all over the world. They are the

transistor T K 2056

Abstract: K 2056 transistor transistor K 2056
Contextual Info: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage

Contextual Info: • < cr < z CM CM O ro Ld i LU LU < jCO ° o r-i00 * _L <_ NOT TOOLED AE-3022-25A 25 60.0 62.4 22- 03-1221 AE-3 022-22A 22 52.5 54.9 22- 03-1211 2 IA 21 50.0 52.4 22- 03-1201 20A 20 47.5 49.9 -1191 I9A 19 45.0 47.4 -1181 ISA 18 42.5 44.9 -1171 I7A 17 40.0

Contextual Info: I Q NHCATIS ORIGINAL OATACDNTAI« W TMII I H U e f f I S PHFRIETMtY TO I Htfr CTEB B-ECTBOKICS INC, AM SHALL NOT BE DISCLOSE, OFIED CR USEO FOB P g T LBBeuT OR MANUFACTURE WITHOUT EXPRESS MtlTTBi PBWISSKW. DASH NO CABLES ACCDMMDDATED REV H REVISIONS DESCRIPTION

HT 118

Contextual Info: High Voltage Ceramic Capacitors HT/HU Types - Type I Style Type Size h max L max ø D Table of Values Dimensions millimeters inches L h л d p e (ISO) Tightening torque S (m.daN) Rated Rated Cap. Voltage CR (pF) VR (kV) Type 0.3 D ± 2 (.079) h ± 2 (.079)

11N08

Contextual Info: À THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DO NOT SCALE o I— I co o £ U i— i èÉ g=n cr S , - C 0 -.

MET-41

Abstract: TF5S21ZZ
Contextual Info: T AAAM J3A REV. Status REVISION 0 4 / 0 3 / 9 8 TS AUDIO COUPLING MINIATURE ENCAPSULATED TRANSFORM ER DESIGNED TO OPERATE 50mW MAX IN SECONDARY AND REFLECT A PRIMARY IMPEDANCE OF APPROXIMATELY 300 Q CT WITH 600 fi LOAD ON SECONDARY. cr LÜ m I H A. Electrical Specification s @ 2 0 ° C

MAX1016

Contextual Info: Silicon Bipolar MMIC Active Mixer/IF Amplifer MAMD12018 CR-7 Features • • • • • • • • 8 dB C onversion Gain from 50 M H z to 5 GHz IF O utput from DC to 1000 MHz Single Positive Supply: 4 to 8V @ 14 mA Tem perature Range: -55 to + 95°C Term ination Insensitive

Contextual Info: se MIKROn V V drm V rsm rrm I r m s 1' V o lw =4 l/m in ., Tw = 40 °C, ED = 50 %, n = V 1600 A 1750 A 1200 SKIW 1001/12 SKIW 1201/12 1400 SKIW 1001/14 SKIW 1201/14 1600 SKIW 1001/16 SKIW 1201/16 Symbol Conditions Ir m s 11 It s m ft (d i/dt cr Volw = 4 l/mln; T w = 40 °C;

Contextual Info: D THIS DRAWING AND DESIGN HEREON CON­ S T IT U T E S A PROPRIETARY DESIGN OF PACKARD ELE C T R IC DIVISION AND IS NOT TO B E DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD E L E C T R IC DIVISION. DO NOT SCALE O tn I— « > JI— « < o cr o o

Contextual Info: 0 CM in N I so IE z D Z b U' — K ^ AMP' TRADE MARK I A o cr CONTACT NOT SECTIONED =3 ^ * ? b El-C-iÄifo f? I— LU B 00 CM ±0.08 " spaces ^ ^ " ±0.08 2 .5 4 = U TOLERANCES NON-CUMULATI VE li* J R W L wr . . SECT X - X tr o0 d * ln N LD N ""> O ÛC '

Contextual Info: 0 CM in N I so IE z D Z b U' — K ^ AMP' TRADE MARK I A o cr CONTACT NOT SECTIONED =3 ^ * ? b El-C-iÄifo f? I— LU B 00 CM ±0.08 " spaces ^ ^ " ±0.08 2 .5 4 = U TOLERANCES NON-CUMULATI VE li* J R W L wr . . SECT X - X tr o0 d * ln N LD N ""> O ÛC '

MwT-H22

Abstract: H273
Contextual Info: ni CR O U A V E T E C H N O L O G Y bbE i • b l B H l D D □ 0 D D 2 3 H T5T ■ HRUV MwT - H2 26 GHz High Power Pseudomorphic HEMT GaAs FET MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +23 DBM OUTPUT POWER AT 12 GHZ

12077412

Contextual Info: o CO i LD cr < D_ ^ • AU TH 6.00 DIM. WAS G.I5 WITNE5S LIN E . o I7JL86 I5SE87 s=H H jr << o_ 09DE87 0.15 MIN. X 45° C O I N - F U L L LENGTH OF B L A D E - 4 EDGES AS SHOWN. 09JA 8 9 IZ D ê M 2 5 JA ^ 5 - ! CK 97138 GP{ GF 106980 JP. * VIEW ADDED-REV. SYM. REMAINS