CR 406 TRANSISTOR Search Results

cr 406 transistor

Abstract: BUZ54
Contextual Info: PowerMOS transistor BUZ54 N AMER PHILIPS/DISCRETE — DhE D • ^ 5 3 ^ 3 1 0D14717 5 ■ “ T - $ cH 3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in

1N5411

Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Contextual Info: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal

cr 406 transistor

Abstract: 2SD2096 8002 Amplifier IC transistor t114
Contextual Info: 2SD2096 Transistor, NPN Features Dimensions Units : mm • available in HRT package • low collector saturation voltage, typically VCE(sat) = 0.3 V at Ic/Ib = 2 M 0.2 A • excellent current-to-gain characteristics 2SD2096 (HRT) • large collector loss: Pc = 1.8 W

Q62702-D1070

Abstract: TRANSISTOR D 1785 BD430
Contextual Info: asc D • â23SbOS OüOMBS'i 5 m Z I Z G ■ BD 430 PNP Silicon Planar Transistor ',cr. 0 4 3 5 9 SIEMENS AKTI EN 6E SE LL SCH AF D T -3 3 -/ 7 BD 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in

cr 406 transistor

Abstract: QM100DY-2HB
Contextual Info: MITSUBISHI TRANSISTOR MODULES j QM100DY-2HBK ¡ HIGH POWER SWITCHING USE INSULATED TYPE I Q M 100DY-2HBK i Í • Ic Collector current. 10QA Collector-emitter voltage.1000V • hFE DC current gain.750

cr 406 transistor

Abstract: MC3344P MC3344 RC differentiator MC3344L id2l 600PA AD1385 DS9665
Contextual Info: . MC3344 PROGRAMMABLE WITH The MC3344 designed FREQUENCY ADJUSTABLE is a generaI purpose SWiTCH HYSTERESIS programmable frequency for use in systems where a load must be switched at a predetermined an external resistor and determined frequency. Switch frequency

MRF2001M

Abstract: motorola transistor r 724 MRF2001
Contextual Info: 12E D I t3b?ESM 0000024 T | MO T OR OL A SC r - 33-o¿r XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA _ T h e R F L in e _ 1 .0 W 2 GHz NPN SILICON MICROWAVE POWER TRANSISTOR M IC R O W A V E POWER T R A N S IS TO R . . . designed for Class B and C common base broadband amplifier

transistor SMD p05

Abstract: 1981-R TRANSISTOR SMD 2X y 127 D TRANSISTOR 476 16q CP QUICK CONNECT L-398 LDA100 LDA101 LDA110
Contextual Info: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 Output Characteristics Collector Current mA Typical Capacitance (pF) (Ve.= 1 0 V ;f = 1MHz) Collector Dark Current (nA) (Ve. = SV; lF= 0mA)

MARCON NH capacitor

Abstract: UT141-25 neosid* 10k UT-141-25 4.7kohm trimmer RG316-25 mount chip transistor 13W diode L2.70 ferrite core shield transformer pin connection vk200 ferrite bead
Contextual Info: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is

SMD transistor UY

Abstract: smd transistor 406 1981-R TRANSISTOR SMD catalog transistor smd 127 transistor SMD p05 smd transistor 079 LDA100 transistor a102 LDA111
Contextual Info: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 O utput C haracteristics C ollecto r C urrent mA Typical C apacitance (pF) (V e. = 1 0 V ;f = 1M Hz) C o llecto r D ark C urrent (nA)

MRF2016M

Abstract: MRF201 MRF2016
Contextual Info: 12E D £ b3b?254 ÜOflñGSa 4 | MOT ORC LA SC MOTOROLA "33-11 XSTRS/R F S E M IC O N D U C T O R TECHNICAL DATA MRF2016M T h e R F L in e 16 W 2 GHz M IC R O W A V E POW ER T R A N S IS T O R NPN SILICON MICROWAVE POWER TRANSISTOR N P N S IL IC O N . . . d esign ed for C la ss B and C com m on b a se broadband am plifier

regulator 4468

Abstract: transistor BU406 BU406 BU407 Transistor 80139 flyback transformer philips 12vk
Contextual Info: PHILIPS INTERNATIONAL P h ilip s S e m ic o n d u c to rs 45E D _ □ TllGÛBb 003ÜÔ31 _ P r o d u c t s p e c ific a tio n Silicon diffused power transistors // Q U IC K R E F E R E N C E D A T A H igh -vo ltage, high-speed,

arco 406

Abstract: mrf141g transistor fet N-Channel RF Amplifier RF TOROIDS Design Considerations
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

st 339

Abstract: st339 diode 937 ke SLOTTED OPTICAL SWITCH for C3 937 ke ST1131-11 KE 34A
Contextual Info: SLOTTED OPTICAL SWITCH op fiE L tm yics H21A1/2/3 SVM BQi MiUIMETERS MAX. MIN. •D 1 - S I ±y _ ^ 3 *1 SECTION X - X~T~ LEAD PROFILE ST?339*01 INCHES MIN, A W .7 11.0 ,422 433 A- 3.0 a? 119 .125 At 3.0 32 .113 125 <8*> b, .SCO .750 .50 NOM. .024 ,030

IR 2148A

Contextual Info: GENERAL -.A Y O U I SEMICONDUCTOR SiZES FOR THE RECOMMENDED SURFACE MOUNT MINIMUM RECTIFIER MOUNTING AND THE DA H FL A T P A O G E N E R A L S E M IC O N D U C T O R R E C O M M E N D E D M IN IM U M M O U N T IN G PAD LAYO UT S IZ E S TO R THE S U R FA C E MO UNT R E C T IF IE R A N D THE FL£~ PACK

Contextual Info: BA9702FS Regulator, switching, 3 channel The BA9702FS is a switching regulator that uses a pulse width modulated system for a very stable output. Dimensions Units : mm BA9702FS (SSOP-A24) It contains three sets of error amplifiers, protectors, and pulse mode modulated

SFC 2723

Abstract: TDB1146DP SFC 2723 M SFC2723 la 78140 TDB1146 sf.c thomson TDB1146-DP voltage regulator thomson CSF TDB1146CM
Contextual Info: o THOMSON-EFCIS Circuits Intégrés TDB1146 R E G U L A T E U R H A U T E T E N S IO N D E P R E C IS IO N P R E C IS IO N H IGH V O L T A G E R E G U L A T O R - V Le TDB1146 est un régulateur de tension à structure intégrée monolithique réalisé en technologie haute

8U406

Abstract: T0252 ba05sfp BA05FP BU2879 32segx4com ba1032 BU9716AK bu9716 BA312
Contextual Info: Memory/Standard tCs Table of Memory/Standard ICs Table of Memory / Standard ICs Ferroelectric memory Operating voltage range Capacity oils 16k Bit configurato Power supply Product No. (word X bit} BR24CF16F voltage (V) 2,048 X 8 5 Read (V) Write (V) 4.5 -5 .5

4GIT

Contextual Info: MOTOROLA Order this document by MMDF2P02HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M M D F2P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS P-Channel Field Effect Transistors DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS

ICS8538-31

Abstract: ICS8538BG-31 ICS8538BG-31LF ICS8538BG-31LFT ICS8538BG-31T 8538BG-31
Contextual Info: ICS8538-31 Integrated Circuit Systems, Inc. LOW SKEW, 1-TO-8, CRYSTAL OSCILLATOR/ LVCMOS-TO-3.3V LVPECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS8538-31 is a low skew, high performance 1-to-8 Cr ystal Oscillator/LVCMOS-to-3.3V HiPerClockS LVPECL Fanout Buffer and a member of the

874-D20

Abstract: transformer JS 0432 d 2037 transistor 2n918 die 2N918 2N918UB 2N918 thermal resistance
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 24 August 2010. MIL-PRF-19500/301K 24 May 2010 SUPERSEDING MIL-PRF-19500/301J 12 October 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, LOW-POWER,

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Abstract: nb 358 d
Contextual Info: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD PRELIMINARY DATA • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)

1XFH12n100

Abstract: transistor 13n80
Contextual Info: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure

Contextual Info: £3 National Semiconductor August 1990 LH2426 Triple 80 MHz CRT Driver General Description Features The LH2426 contains three wide bandwidth, large signal amplifiers designed for large voltage swings at high frequen­ cies. The amplifiers work on a transimpedance principal i.e.,