CR12CM Search Results

Contextual Info: Preliminary Datasheet CR12CM-12A R07DS1035EJ0400 Rev.4.00 Jul 30, 2013 600V - 12A - Thyristor Medium Power Use Features • IT AV : 12 A • VDRM : 600 V • IGT : 30 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AG-A

REJ03G0350-0100

Abstract: CR12CM-12 CR12CM-12A CR12CM-12A-A8
Contextual Info: CR12CM-12 Thyristor Medium Power Use REJ03G0350-0100 Rev.1.00 Aug.20.2004 Features • IT AV : 12 A • VDRM : 600 V • IGT : 30 mA • Non-Insulated Type • Planar Passivation Type Outline TO-220 4 2, 4 3 1. 2. 3. 4. Cathode Anode Gate Anode 1 12 3 Applications

Contextual Info: Preliminary Datasheet CR12CM-12B 600V - 12A - Thyristor R07DS0232EJ0200 Rev.2.00 Feb 25, 2013 Medium Power Use Features • IT AV : 12 A  VDRM : 600 V  IGT : 30 mA  The product guaranteed maximum junction temperature of 150°C  Non-Insulated Type

PRSS0004AA-A

Abstract: T220AB
Contextual Info: Preliminary Datasheet CR12CM-12B Thyristor R07DS0232EJ0100 Rev.1.00 Dec 20, 2010 Medium Power Use Features • IT AV : 12 A  VDRM : 600 V  IGT : 30 mA  The product guaranteed maximum junction temperature of 150°C  Non-Insulated Type  Planar Passivation Type

Contextual Info: Preliminary Datasheet CR12CM-12B R07DS0232EJ0300 Rev.3.00 Jul 30, 2013 600V - 12A - Thyristor Medium Power Use Features • IT AV : 12 A • VDRM : 600 V • IGT : 30 mA • The product guaranteed maximum junction temperature of 150°C • Non-Insulated Type

CR12CM-12A

Abstract: diagram 3 phase heater CR12CM-12A-A8 PRSS0004AA-A
Contextual Info: CR12CM-12A Thyristor Medium Power Use REJ03G0350-0200 Rev.2.00 Nov 30, 2007 Features • IT AV : 12 A • VDRM : 600 V • IGT : 30 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AA-A (Package name: TO-220) 4

Contextual Info: Preliminary Datasheet CR12CM-12B Thyristor R07DS0232EJ0100 Rev.1.00 Dec 20, 2010 Medium Power Use Features • IT AV : 12 A  VDRM : 600 V  IGT : 30 mA  The product guaranteed maximum junction temperature of 150°C  Non-Insulated Type  Planar Passivation Type

Contextual Info: Preliminary Datasheet CR12CM-12A R07DS1035EJ0300 Previous: REJ03G0350-0200 Rev.3.00 Feb 25, 2013 600V - 12A - Thyristor Medium Power Use Features • Non-Insulated Type  Planar Passivation Type  IT (AV) : 12 A  VDRM : 600 V  IGT : 30 mA Outline

RJH60F7

Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
Contextual Info: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

RJJ0319DSP

Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

rjh60f5

Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
Contextual Info: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

H7N1009MD

Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
Contextual Info: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility