CRCW120610R0F Search Results

Contextual Info: MIC2169 Micrel MIC2169 500kHz PWM Synchronous Buck Control IC General Description Features The MIC2169 is a high-efficiency, simple to use 500kHz PWM synchronous buck control IC housed in a small MSOP-10 package. The MIC2169 allows compact DC/DC solutions

MRF6S21140HR3

Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

MRF6S19060N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 0, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19060NR1 MRF6S19060NBR1 Designed for N- CDMA base station applications with frequencies from 1930

CMZ5920B

Abstract: CMZ5944B CMSH2-60
Contextual Info: User's Guide SNVA154A – March 2006 – Revised May 2013 AN-1455 LM5072 Evaluation Board 1 Introduction The LM5072 evaluation board is designed to provide a low cost, fully IEEE 802.3af compliant Power over Ethernet PoE power supply, capable of operating with both PoE and auxiliary (AUX) power sources. The

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR

Contextual Info: Not for New Designs TFDU6103 www.vishay.com Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.4 V to 5.5 V Operation FEATURES • Supply voltage 2.4 V to 5.5 V, operating idle current (receive mode) < 3.3 mA, shutdown current < 1 A over full temperature range

C4532X7R2A105MT

Abstract: cmsh3-40l-nsa SUMMATION current transformer LM5000 LM5000-3MTC LM5000-3MTCX LM5000SD-3 LM5000SD-6 LM5000SDX-3 3.1v ZENER DIODE
Contextual Info: LM5000 High Voltage Switch Mode Regulator General Description Features The LM5000 is a monolithic integrated circuit specifically designed and optimized for flyback, boost or forward power converter applications. The internal power switch is rated for a maximum of 80V, with a current limit set to 2A. Protecting

PTC THERMISTOR TDK

Abstract: inductor 220 mh 4148 vishay smd WE-MIDCOM NCL30001 LM324DG SMD resistor royal ohm PTC THERMISTOR PHILIPS PTC 250 Ohm - 25 - 25 V C3216COG1H TDK PTC 1206
Contextual Info: AND8470/D A 25 to 55 V, 0.7 to 1.5 A, Single Stage Power Factor Corrected Constant Current Offline LED Driver with Flexible Dimming Options Prepared by: Frank Cathell APPLICATION NOTE ON Semiconductor Introduction energy savings without compromising safety and

Contextual Info: TFDU6300 www.vishay.com Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for IrDA Application FEATURES • Compliant to the latest IrDA physical layer specification (up to 4 Mbit/s) with an extended low power range of > 70 cm (typ. 1 m) and TV

1uF, 50V, AVX Corporation

Abstract: CAPACITOR SMD 16v 220 u 12105C475KAT2A visteon 20R0 SMD RESISTANCE power supply 100v 30a schematic schematic diagram PWM 12V 30a mccoy on semiconductor zener 13v smd
Contextual Info: ON Semiconductor Confidential – NDA Required Design Note – DN06056/D Power Supply For Audio Class D Amplifier Device CS51221 Application Input Voltage Output Voltage Output Current Topology Audio 7.6-45 V 18V 8.3A Boost Table 1: CS51221 Audio Power Supply

schematic diagram 48V solar charge controller

Abstract: Solar mppt schematic schematic diagram 12V solar charge controller Solar Charge Controller circuit PWM 12v Solar Charge Controller diagram solar PWM charge controller circuit Diagram schematic diagram 48V solar controller Solar Charge Controller mppt for 1.5 KW Solar Charge Controller Circuit PWM schematic diagram 12V solar controller
Contextual Info: Design Note – DN06054/D Reference Design for Solar Power MPPT Controller Device Application Input Voltage NCP1294 Solar Street Lighting 12-24 V Output Voltage A 13.2V Output Current A Topology 2.0A Table 1: NCP1294 Output Statistics Characteristic Output Voltage

MIC2169A

Abstract: si4174dy IRF7821 MSOP-10 SD103BWS Si4800
Contextual Info: MIC2169B 500kHz PWM Synchronous Buck Control IC General Description Features The MIC2169B is a high-efficiency, simple to use 500kHz PWM synchronous buck control IC housed in small MSOP-10 and MSOP-10 ePad packages. The MIC2169B allows compact DC/DC solutions with a minimal external

MCR50V107M8X11

Abstract: 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3 CRCW120610R0FKTA
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to

J294

Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S23140HR3 MRF6S23140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to

mrf5s19060nr1

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 7, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to

Contextual Info: TFDU6301 Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.4 V to 3.6 V Operation and Low-Voltage Logic (1.8 V) Description The TFDU6301 transceiver is an infrared transceiver module compliant to the latest IrDA physical layer low-power standard for fast infrared data communication, supporting IrDA speeds up to 4 Mbit/s (FIR),

infrared RC6 protocol philips

Contextual Info: TFDU6103 Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.4 V to 5.5 V Operation Description The TFDU6103 is a low-power infrared transceiver module compliant to the latest IrDA physical layer standard for fast infrared data communication,

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to

TFDU6301

Abstract: TFDU6301-TR3 TFDU6301-TT3
Contextual Info: TFDU6301 Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.4 V to 3.6 V Operation and Low-Voltage Logic (1.8 V) Description The TFDU6301 transceiver is an infrared transceiver module compliant to the latest IrDA physical layer low-power standard for fast infrared data

AD250

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 0, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to

MRF6S19060N

Contextual Info: Document Number: MRF6S19060N Rev. 5, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.