CRCW12062R7FKEA Search Results

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to

MOSFET J162

Abstract: CW12010T0050G
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 1, 11/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 0, 7/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

250GX-0300-55-22

Abstract: j6808 GRM32RR71H105KA01B 2508051107Y0 F 5M 365 R T491D106K050at A114 A115 AN1955 C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to