CS 23-16 THYRISTOR Search Results

E113

Abstract: E119 7E17 8IO2 IXYS cs
Contextual Info: Discrete Thyristors Contents Package style Type Page 16 CS 8-.io2 E1-2 19 19 CS19-.ho1 CS 19-.ho1S E1-4 19 CS20-.io1 E1-7 32 CS 23 E1-10 31 CS 30 E1-13 CS 35 E1-16 CS45-.Î01 CS45-.Î01R new E1-19 100 CS 72 E1-22 164 CS 142 E1-24 380 CS300 E1-26

SCR 2146

Abstract: 72-12io8 cs 45-12IO1 scr 2032 IGD 001 tg-500 IXYS SCR Gate Drive CS 45-16io1R 300-12io3 CS thyristor cs 3-06
Contextual Info: Discrete Thyristors Contents 2 1 Type Page 1800 1600 1400 A VRRM/VDRM V 1200 IT(AV)M 800 Package style 1 16 ● ● CS 8-.io2 E1-2 2 3 19 19 ● ● ● ● CS 19-.ho1 CS 19-.ho1S E1-4 4 19 CS 20-.io1 E1-7 1 32 ● CS 23 E1-10 4 31 ● ● ● CS 30

mq137

Abstract: csf369 CSF499 00Q0 CS 661
Contextual Info: I X Y S CORP 1ÖE D • 4hñb22b 00Q0 7 7 S 7 ■ Line Commutated Thyristors o o o o • • • /VRFm V o o o o CM CO V- T“ • • Itav 1400 200 Version 1 008 Type o o <o T— CS 5 2.3 CS 8 2.3 C S 16 C S 23 C S 35 C S 52 2.3 2.3 4 1,8 25 60 50 C S 72

A2529

Abstract: CS 8-12 10MSA
Contextual Info: Thyristors, SCRs S C R = Silicon Controlled Rectifier Phase Control Thyristors Thyristors are very rugged devices. Compared to all oth e r co ntro lle d sem i-co n d uctor components, they feature the highest current capacity per chip area, especially at high

CS5 thyristor

Abstract: CS 23-16 thyristor CS 23-08 thyristor CS 23-06 thyristor CS 110 thyristor CS 23-04 thyristor CS thyristor cs 6-06 cs 16-12 cs 6-06 CS thyristor cs 6
Contextual Info: Netzthyristoren Thyristor Phase control thyristors Vdrm Vrrm Itrms V A T A V lf ic Itavm 85°C r Typ/type CS 0,8-02 do CS 0,8-04 do CS 0,8-06 do CS 0,8-07 do CS 0,8-08 do CS CS CS CS CS 3-02 3-04 3-06 3-07 3-08 do do do do do 2 2 2 \ bzw. 2 2 r 2 21 bzw.

Contextual Info: A S E A BROUN/ABB "ai SEMICON GOMöBDö □ O D O lb 'T irjT ' Netzthyristoren Thyristor Phase control thyristors Vdrm Vrrm Itrms V A T A V lfic Itavm Tc = 85°C r Typ/type A/°C It s m n \H 8,3 ms 10 ms A ¡T 10 ms (Tvjm ) Tvj=45°C tvjm A!s fifis Idrm

CS thyristor cs 6-06

Abstract: CS 23-16 thyristor CS5 thyristor CS 23-06 thyristor CS thyristor cs 3-04 CS thyristor cs 6 CS 23-04 thyristor CS thyristor cs 3-06 cs 8-12 Thyristor CS 23-08 thyristor
Contextual Info: A S E A BROUN/ABB "ai SEMICON GOMöBDö □ O D O lb 'T irjT ' Netzthyristoren Thyristor Phase control thyristors Vdrm Vrrm Itrms V A T A V lfic Itavm Tc = 85°C r Typ/type A/°C It s m n \H 8,3 ms 10 ms A ¡T 10 ms (Tvjm ) Tvj=45°C tvjm A!s fifis Idrm

cs 23-12

Abstract: scr 2308 CS 8-12 10MSA
Contextual Info: , Thyristors SCRs SCR = Silicon Controlled Rectifier Phase Control Thyristors Thyristors are very rugged devices. Compared to all other semiconductor components, they feature the highest current capacity per chip area, espe­ cially at high voltage. They are mainly

T 4512 H diode

Abstract: diode T 4512 H cs 23-12 cs 45-12 iol
Contextual Info: , Thyristors SCRs SC R = Silicon Controlled Rectifier Phase Control Thyristors {S C R = S ilic o n C o n tro lle d R e c tifie r) Thyristo rs are v e ry rugged devices. C o m p a re d to all o ther controlled se m ico n d u cto r com pone nts, they featu re

CS 8-12

Abstract: CS45-08iol CS630 CS2014 CS30-16 CS30-16iol CS45-16 300-12io3 CS1250 cs 35-12
Contextual Info: , Thyristors SCRs Phase Control Thyristors SC R = S ilicon C o ntrolled R ectifier Thyristors are very rugged devices. Compared to all other sem iconductor components, the y feature the highest current capacity per chip area, especially at high voltage. They are mainly used as

thyristor BBC CS 0,6

Abstract: thyristor BBC thyristor BBC cs 16 thyristor BBC CS thyristor BBC cs 3 02 do2 thyristor BBC cs 550 bbc cs 130 thyristor brown boveri thyristors BBC CS-130-08 thyristor BBC CS 3,5
Contextual Info: BBC Technical Data Silicon-Semiconductor BTOW NB0U6BI Components Printed order nr. Thyristors D GHS 30393 E T h y ris to rs a re c o n tro lle d s e m ic o n d u c to r ce lls . T h e y a re b e in g p ro d u c e d in a fo u r layer a rra n g e m e n t w ith a lto g e th e r th re e pn ju n c tio n s Si, s 2, s3, see Fig. 1 b. In reverse

DG406BP25

Abstract: HS- 2000V lN2430 gate turn-off 300a 1000v thyristor Gate Turn-Off Thyristors
Contextual Info: DG406BP25 DG406BP25 Gate Turn-off Thyristor Replaces version, DS4090-3.0 DS4090-4.0 November 2005 LN24306 APPLICATIONS KEY PARAMETERS ITCM 1200A VDRM 2500V IT(AV) 500A dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC).

Contextual Info: DG406BP25 DG406BP25 Gate Turn-off Thyristor Replaces version, DS4090-3.0 DS4090-4.0 November 2005 LN24306 APPLICATIONS KEY PARAMETERS ITCM 1200A VDRM 2500V IT(AV) 500A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC).

ixys cs8

Abstract: CS808IO2 CLA30E1200HB CS8-12IO2 cla30e CS thyristor cs 3-06 IXYS CS8-0812 THYRISTOR
Contextual Info: CS 8 Phase Control Thyristors VRRM = 800-1200 V IT RMS = 25 A IT(AV)M = 16 A VRSM VDSM VRRM VDRM TO-64 V V 900 1300 800 1200 Type 1 2 2 3 3 CS 8-08io2 CS 8-12io2 1 M5 t 1 = Anode, 2 = Cathode, 3 = Gate Test Conditions IT(RMS) IT(AV)M TVJ = TVJM Tcase = 85°C; 180° sine

45C100

Abstract: TO64 CS thyristor cs 3-06
Contextual Info: CS 8 Phase Control Thyristors VRRM = 800-1200 V IT RMS = 25 A IT(AV)M = 16 A VRSM VDSM VRRM VDRM TO-64 V V 900 1300 800 1200 Type 1 2 2 3 3 CS 8-08io2 CS 8-12io2 1 M5 1 = Anode, 2 = Cathode, 3 = Gate Symbol Test Conditions Maximum Ratings IT(RMS) IT(AV)M

IGCT thyristor ABB

Abstract: IGCT thyristor current max VT115 A115 B115 HFBR-1528 HFBR-2528 MTA-156 igct abb Pressure transmitter TBD
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 630 5x103 1.8 2 2800 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4510 PRELIMINARY Doc. No. 5SYA1223-06 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and

DG406BP

Contextual Info: DG406BP25 DG406BP25 Gate Turn-off Thyristor DS4090-5 July 2014 LN31730 APPLICATIONS KEY PARAMETERS 1200A ITCM VDRM 2500V 500A IT(AV) dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC). ■ Uninterruptable Power Supplies

IGCT thyristor ABB

Abstract: igct abb IGCT 3300V A115 B115 HFBR-1528 HFBR-2528 MTA-156 VT115 IGCT thyristor current max
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 5500 520 3.5x103 2.3 2.3 3300 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 06F6010 PRELIMINARY Doc. No. 5SYA1222-05 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and

THYRISTOR cs 550 16

Abstract: thyristor cs 550 CS 110 thyristor CS 250-12 thyristor CS thyristor cs 6 thyristor cs 52 CS thyristor cs 5-10
Contextual Info: A S E A BROWN/ABB SENICON D^ A3 OOMflBOñ □□□□173 Netzthyristoren Thyristor Jf Vdrm Vrrm •trm s V A kAVi^C •tavm Tc = 85°C A/°C A Itsm ft Ovjm 10 ms) 8,3 ms 10 ms Tv j=45°C tvjm A2S A!s A A 3300 54500 45000 V A 350/70 275 CS 295-08 to 4 CS 295-12 to 4

CS thyristor cs 3-06

Contextual Info: Phase Control Thyristors CS 8 ITRMS = 25 A ITAVM = 16 A VRRM = 800 - 1200 V VRSM VRRM VDSM VDRM V V 900 1300 800 1200 Type TO-64 1 2 2 3 3 CS 8-08io2 CS 8-12io2 1 M5 Symbol Test Conditions ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine I TSM TVJ = 45°C; VR = 0

DG406BP25

Abstract: AN4506 AN4839 DS4090-3
Contextual Info: DG406BP25 DG406BP25 Gate Turn-off Thyristor Replaces March 1998 version, DS4090-2.3 DS4090-3.0 January 2000 APPLICATIONS KEY PARAMETERS 1000A ITCM VDRM 2500V 400A IT AV dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC).

300a 1500v thyristor

Abstract: DG406BP25
Contextual Info: DG406BP25 DG406BP25 Gate Turn-off Thyristor Replaces March 1998 version, DS4090-2.3 DS4090-3.0 January 2000 APPLICATIONS KEY PARAMETERS 1000A ITCM VDRM 2500V IT AV 400A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC).

DG406BP25

Contextual Info: DG406BP25 DG406BP25 Gate Turn-off Thyristor Replaces March 1998 version, DS4090-2.3 DS4090-3.0 January 2000 APPLICATIONS KEY PARAMETERS 1000A ITCM VDRM 2500V IT AV 400A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC).

SG2000EX26

Contextual Info: TO SH IBA SG2000EX26 TOSHIBA GATE TURN-OFF THYRISTOR INVERTER APPLICATION • • • • • LOW SNUBBER TYPE SG2000EX26 Unit in mm Repetitive Peak Off-State Voltage : V d r m = 2500 V Note 1 R.M.S On-State Current : It (RMS) = 1050 A Peak Turn-Off Current