CS 45-12 IOL Search Results

Contextual Info: HM 65687A MATRA MHS 64 K x 1 Ultimate CMOS SRAM Introduction The HM 65687A is a very low power CMOS static RAM organized as 65536 × 1 bit. It is manufactured using the MHS high performance CMOS technology named super CMOS. current typical value = 0.1 µA with a fast access time at

Contextual Info: HM 65688A MATRA MHS 16 K x 4 Ultimate CMOS SRAM Introduction The HM 65688A is a very low power CMOS static RAM organised as 16384 × 4 bits. It is manufactured using the MHS high performance CMOS technology named super CMOS. current typical value = 0.1 µA with a fast access time at

HM62W8127H

Abstract: HM62W8127HJP-30 HM62W8127HJP-35 HM62W8127HJP-45 HM62W8127HLJP-30 HM62W8127HLJP-35 HM62W8127HLJP-45 HM62W9127H HM62W9127HJP-30 HM62W9127HJP-35
Contextual Info: HM62W8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM The HM62W8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word × 8/9-bit. It realize high speed access time 30/35/45 ns with

Contextual Info: M 65698 MATRA MHS 64 K x 4 Ultimate CMOS SRAM Introduction The M 65698 is a very low power CMOS static RAM organized as 65536 × 4 bits. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for

Contextual Info: M 65697 MATRA MHS 256 K x 1 Ultimate CMOS SRAM Introduction The M 65697 is a very low power CMOS static RAM organized as 262144 × 1 bit. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for

F31Z

Abstract: 922z
Contextual Info: HM62W8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI Description The HM62W8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word x 8/9-bit. It realize high speed access time 30/35/45 ns with employing 0.8 fim CMOS

FTS128K32-XXX

Contextual Info: FTS128K32-XXX 128Kx32 SRAM MODULE FEATURES Access Times of 15, 17, 20, 25, 35, 45, 55ns Low Power CMOS MIL-STD-883 M5004 Devices Available TTL Compatible Inputs and Outputs Packaging Built in Decoupling Caps and Multiple Ground Pins for Low Noise Operation

Contextual Info: FTS128K32-XXX 128Kx32 SRAM MODULE FEATURES Access Times of 15, 17, 20, 25, 35, 45, 55ns Low Power CMOS MIL-STD-883 M5004 Devices Available TTL Compatible Inputs and Outputs Packaging Built in Decoupling Caps and Multiple Ground Pins for Low Noise Operation

IS62C256

Abstract: IS62C256-45T IS62C256-45TI IS62C256-45U IS62C256-45UI IS62C256-70T IS62C256-70TI IS62C256-70UI
Contextual Info: IS62C256 32K x 8 LOW POWER CMOS STATIC RAM FEATURES ISSI DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSI's high- • Access time: 45, 70 ns • Low active power: 200 mW typical • Low standby power

Contextual Info: 512K x 8 SRAM MODULE SYS8512FK-20/25/35/45 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 5.0 : November 1999 Description Features The SYS8512FK is plastic 4M Static RAM Module housed in a standard 32 pin Dual-In-Line package

SYS8512FK-20

Abstract: 256KX4
Contextual Info: TRAILING EDGE PRODUCT - MINIMUM ORDER APPLIES 512K x 8 SRAM MODULE SYS8512FK-20/25/35/45 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0 191 2930500 Fax. +44 (0) 191 2590997 Description Features The SYS8512FK is plastic 4M Static RAM Module

G2U TR

Abstract: MIL-STD-883-M5004 Marl
Contextual Info: FTS128K32-XXX 128Kx32 SRAM MODULE Features Access Times of 15, 17, 20, 25, 35, 45, 55ns Low Power CMOS MIL-STD-883 M5004 Available TTL Compatible Inputs and Outputs Packaging Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation • 66 pin, PGA Type H1 , 1.075" square, Hermetic

Contextual Info: 512K x 8 SRAM MODULE SYS8512FK-20/25/35/45 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0 191 2930500 Fax. +44 (0) 191 2590997 Description Features The SYS8512FK is plastic 4M Static RAM Module housed in a standard 32 pin Dual-In-Line package

Contextual Info: PRELIMINARY CYM1828 32K x 32 Static RAM Module Features Functional Description D The CYM1828 is a very high performance 1Ćmegabit static RAM module organized as 32K words by 32 bits. The module is conĆ structed using four 32K x 8 static RAMs mounted onto a multilayer ceramic subĆ

Contextual Info: WED8LM32129C HI-RELIABILITY PRODUCT 128Kx32 SRAM MODULE PRELIMINARY* FEATURES • Access Times of 15, 17, 20, 25, 35, 45, 55ns ■ Packaging ■ Low Power CMOS ■ TTL Compatible Inputs and Outputs ■ Built in Decoupling Caps and Multiple Ground Pins for Low

AS 15 -g

Abstract: HM65789
Contextual Info: HM 65789 MATRA MHS 16 K x 4 High Speed CMOS SRAM with Output Enable Introduction The HM 65789 is a high speed CMOS static RAM organized as 16384 × 4 bits. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 15 ns are available with maximum

Contextual Info: Preview IlM lI September 1989 HM 65688 DATA SHEET 16 k X 4 ULTIMATE CMOS SRAM FEATURES . ACCESS TIME MILITARY/INDUSTRIAL : 45/55 ns max COMMERCIAL : 35/45 ns (max) . VERY LOW POWER CONSUMPTION ACTIVE : 175.0 mW (typ) STANDBY : 2.0 pW (typ) DATA RETENTION : 0.8 jiW (typ)

Contextual Info: IlM lI September 1989 HM 65687 DATASHEET 64 k x 1 ULTIMATE CMOS SRAM FEATURES . ACCESS TIME MILITARY/INDUSTRIAL : 45/55 ns max COMMERCIAL : 35/45 ns (max) . VERY LOW POWER CONSUMPTION ACTIVE : 175.0 mW (typ) STANDBY : 2.0 nW (typ) DATA RETENTION : 0.8 |xW (typ)

Contextual Info: Tem ic M 65697 MATRA MHS 256 K x 1 Ultimate CMOS SRAM Introduction The M 65697 is a very low power CMOS static RAM organized as 262144 x 1 bit. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for

Contextual Info: HM62W1664H Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI Description The HM62W1664H is an asynchronous 3.3 V operation high speed static RAM organized as 64-kword x 16bit. It realizes high speed access time 30/35/45 ns with employing 0.8 |im CMOS process and high speed

Contextual Info: HM62W1664H Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI Description The HM62W1664H is an asynchronous 3.3 V operation high speed static RAM organized as 64-kword x 16bit. It realizes high speed access time 30/35/45 ns with employing 0.8 (Am CMOS process and high speed

AS8S512K3

Abstract: 5962-9461109HMX
Contextual Info: SRAM AS8S512K32 & AS8S512K32A 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 SMD 5962-94611 (Military Pinout)

Contextual Info: SRAM AS8S512K32 & AS8S512K32A 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 SMD 5962-94611 (Military Pinout)

Contextual Info: Tem ic M 65698 MATRA MHS 64 K x 4 Ultimate CMOS SRAM Introduction The M 65698 is a very low power CMOS static RAM organized as 65536 x 4 bits. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for