CS 630 F Search Results

Contextual Info: PIXYS Phase Control Thyristor CS 630 ITRM Ss =1400A I' = 630 A VRRM = 1200-1600 V tavm Type 3 4 1200 1400 1600 1200 1400 1600 Symbol CS 630-12io1 CS 630-14io1 CS 630-16io1 Maximum Ratings Test Conditions 1400 630 A A 10 ms 50 Hz , sine 8.3 ms (60 Hz), sine

CR thyristor

Abstract: CS thyristor D-68623 thyristor cs 630
Contextual Info: Phase Control Thyristor CS 630 ITRMS = 1400 A ITAVM = 630 A VRRM = 1200 - 1600 V VRSM V RRM VDSM V DRM V V Type 1 2 3 2 4 3 4 1200 1400 1600 1200 1400 1600 CS 630-12io1 CS 630-14io1 CS 630-16io1 1 Symbol Test Conditions ITRMS ITAVM TC = 85°C; 180° sine I TSM

1794A

Abstract: Belden 7855A
Contextual Info: REV. -16.00 [.630]- DATE NC ECR NO. 0 7 /0 2 /1 0 xxxxxx DESCRIPTION INITIAL RELEASE 7.70 [.303] I— 4.00 [.157]- m ÈkmÈm RECO M M ENDED CABLE STRIPPING DIM’S in 1 Î2 5 CS CM £ in ^ ro in o S I in ro tn IO r^ ro o m o in 00 05 S 2 E Œ - 22.00 [. 866 ]-

R107

Abstract: R220
Contextual Info: Standard Products UTCAM-EngineTM Dynamically Configurable Content Addressable Memory Engine Advanced Datasheet April 1998 FEATURES External Memory q Drives up to 32 gigabytes of memory q Can drive either SRAM or SDRAM Host Interface q Configurable data bus

IGCT thyristor ABB

Abstract: IGCT thyristor current max VT115 A115 B115 HFBR-1528 HFBR-2528 MTA-156 igct abb Pressure transmitter TBD
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 630 5x103 1.8 2 2800 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4510 PRELIMINARY Doc. No. 5SYA1223-06 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and

K4T1G044QQ

Contextual Info: RDIMM DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 1Gb Q-die 72-bit ECC 60FBGA and 63DDP with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

DDR3 jedec 21-c

Abstract: MT41J256M4 micron quad die ddr3 MICRON ddr3
Contextual Info: 2GB, 4GB x72, ECC, SR 240-Pin DDR3 VLP RDIMM Features DDR3 SDRAM VLP RDIMM MT18JDF25672PZ – 2GB MT18JDF51272PZ – 4GB Features Figure 1: 240-Pin VLP RDIMM (R/C M) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, very low-profile registered dual in-line

Contextual Info: 2GB, 4GB, 8GB x72, ECC, DR 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT18JSF25672AZ – 2GB MT18JSF51272AZ – 4GB MT18JSF1G72AZ – 8GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C E) Module height: 30.0mm (1.181in) • DDR3 functionality and operations supported as

micron ddr3

Contextual Info: 2GB, 4GB x72, ECC, SR 240-Pin DDR3 VLP RDIMM Features DDR3 SDRAM VLP RDIMM MT18JDF25672PZ – 2GB MT18JDF51272PZ – 4GB Features Figure 1: 240-Pin VLP RDIMM (R/C M) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, very low-profile registered dual in-line

MT41J256M8

Abstract: 2403 GB 123 DDR3 UDIMM SPD JEDEC MT41J512M8
Contextual Info: 2GB, 4GB, 8GB x72, ECC, DR 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT18JSF25672AZ – 2GB MT18JSF51272AZ – 4GB MT18JSF1G72AZ – 8GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C E) Module height: 30.0mm (1.181 in.) • DDR3 functionality and operations supported as

MT18JSF25672PZ

Abstract: MT18JSF51272PZ-1G9
Contextual Info: 2GB, 4GB x72, ECC, SR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT18JSF25672PZ – 2GB MT18JSF51272PZ – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C C2) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module

max 1782

Abstract: DDR3-1866 RDIMM SPD JEDEC MT18JSF25672PZ
Contextual Info: 2GB, 4GB x72, ECC, SR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT18JSF25672PZ – 2GB MT18JSF51272PZ – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C C2) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module

MT18KSF1G72PZ-1G4

Abstract: MT18KSF1G72PZ-1G6 MT18KSF1G72 MT18KSF25672PZ MT41K1G4
Contextual Info: 2GB, 4GB, 8GB x72, ECC, SR 240-Pin 1.35V DDR3L RDIMM Features 1.35V DDR3L SDRAM RDIMM MT18KSF25672PZ – 2GB MT18KSF51272PZ – 4GB MT18KSF1G72PZ – 8GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C C and C2) • DDR3L functionality and operations supported as

M393T5663QZ3

Abstract: M393T5160QZA M393T5663QZA M393T5160QZA-CF7 M393T5660QZA
Contextual Info: RDIMM DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 1Gb Q-die 72-bit ECC 60FBGA and 63DDP with Pb-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THM 91002S/L-85, 10 , 12 description! The THM91002S/L is a 1,048,576 words by 9 bits dynamic RAM module which assembled 9 pcs of TC511002J on the printed circuit board. The THM91002S/L is optimized for application to the systems which are required

MT18JSF51272AZ

Abstract: MT18JSF25672AZ-1G6 MT18JSF1G72AZ-1G9 MT18JSF51272AZ-1G9
Contextual Info: 2GB, 4GB, 8GB x72, ECC, DR 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT18JSF25672AZ – 2GB MT18JSF51272AZ – 4GB MT18JSF1G72AZ – 8GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C E3) Module height: 30.0mm (1.181in) • DDR3 functionality and operations supported as

MT18KSF1G72PZ-1G6

Abstract: MT18KSF25672PZ MT41K1G4
Contextual Info: 2GB, 4GB, 8GB x72, ECC, SR 240-Pin DDR3L RDIMM Features 1.35V DDR3L SDRAM RDIMM MT18KSF25672PZ – 2GB MT18KSF51272PZ – 4GB MT18KSF1G72PZ – 8GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C C and C2) • DDR3L functionality and operations supported as

MT18KSF1G72PZ-1G6

Abstract: MT18KSF25672PZ MT41K1G4
Contextual Info: 2GB, 4GB, 8GB x72, ECC, SR 240-Pin DDR3L RDIMM Features 1.35V DDR3L SDRAM RDIMM MT18KSF25672PZ – 2GB MT18KSF51272PZ – 4GB MT18KSF1G72PZ – 8GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C C and C2) • DDR3L functionality and operations supported as

MT41J256m8

Contextual Info: 2GB, 4GB x72, ECC, DR 240-Pin DDR3 VLP RDIMM Features DDR3 SDRAM VLP RDIMM MT18JDF25672PDZ – 2GB MT18JDF51272PDZ – 4GB Features Figure 1: 240-Pin VLP RDIMM (MO-269 R/C L) Module height: 18.75mm (0.738in) • DDR3 functionality and operations supported as defined in the component data sheet

Contextual Info: 2GB, 4GB x72, ECC, DR 240-Pin DDR3 VLP RDIMM Features DDR3 SDRAM VLP RDIMM MT18JDF25672PDZ – 2GB MT18JDF51272PDZ – 4GB Features Figure 1: 240-Pin VLP RDIMM (MO-269 R/C L) Module height: 18.75mm (0.738in) • DDR3 functionality and operations supported as defined in the component data sheet

Contextual Info: 2GB, 4GB x72, ECC, SR 240-Pin DDR3 VLP RDIMM Features DDR3 SDRAM VLP RDIMM MT18JDF25672PZ – 2GB MT18JDF51272PZ – 4GB Features Figure 1: 240-Pin VLP RDIMM (R/C M) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, low-profile registered dual in-line memory

Contextual Info: DDR2 SDRAM VLP RDIMM DDR2 VLP Registered SDRAM MODULE 240pin VLP Registered Module based on 512Mb E-die 72-bit ECC 60FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

64KA15

Contextual Info: 2GB, 4GB, 8GB x72, DR 240-Pin 1.35V DDR3L RDIMM Features 1.35V DDR3L SDRAM RDIMM MT18KSF25672PDZ – 2GB MT18KSF51272PDZ – 4GB MT18KSF1G72PDZ – 8GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C B, R/C B1) • DDR3L functionality and operations supported as

DDR200

Abstract: DDR266 DDR333 W3EG72126S-D3 DEVICE MARKING CODE T10C 13003 d
Contextual Info: W3EG72126S-D3 -JD3 -AJD3 White Electronic PRELIMINARY* 1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL FEATURES DESCRIPTION Double-data-rate architecture The W3EG72126S is a 128Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of eighteen 128Mx4