AP03-049
Abstract: EML DRIVER E2550H57 E2550H58 E2550H59 E2580 IEC60825-1 10 gb laser diode
Text: Data Sheet October 2003 E2550 10 Gb/s EML Modules for up to 40 km Transmission Description 10 G b/ s Tr iQ ui E2 LEC nt OP TO E La 550 TRO NI se CS rM od ul e The E2550 EML, with integral driver IC, is designed for 10 Gb/s DWDM or TDM transmission applications. It
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E2550
DS03-047,
AP03-049
EML DRIVER
E2550H57
E2550H58
E2550H59
E2580
IEC60825-1
10 gb laser diode
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL33B5663A-K9S/F8S/E7S REV: 1.0 General Information 2GB 256M x 72 DDR3 SDRAM ECC RDIMM 240-PIN Description The VL33B5663A is a 256M x 72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS 128M x 8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL clock in BGA
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VL33B5663A-K9S/F8S/E7S
240-PIN
VL33B5663A
28-bit
240-pin
VN-180909
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DDR3 timing diagram
Abstract: 240-PIN DDR3-1066 DDR3-1333 PC3-10600 samsung DDR3 SDRAM 2GB
Text: Product Specifications PART NO.: VL33B5663A-K9S/F8S/E7S REV: 1.0 General Information 2GB 256M x 72 DDR3 SDRAM ECC RDIMM 240-PIN Description The VL33B5663A is a 256M x 72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS 128M x 8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL clock in BGA
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VL33B5663A-K9S/F8S/E7S
240-PIN
VL33B5663A
28-bit
240-pin
240-pin,
VN-180909
DDR3 timing diagram
DDR3-1066
DDR3-1333
PC3-10600
samsung DDR3 SDRAM 2GB
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VL53B5663A-K9S-F8S-E7S
Abstract: dm 136
Text: Product Specifications PART NO: VL53B5663A-K9S-F8S-E7S REV: 1.0 General Information 2GB 256MX72 DDR3 SDRAM ECC 244 PIN Mini-RDIMM Description: The VL53B5663A is a 256Mx72 DDR3 SDRAM high density Mini-RDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered
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VL53B5663A-K9S-F8S-E7S
256MX72
VL53B5663A
128Mx8
28-bit
244-pin
244-pin,
VL53B5663A-K9S-F8S-E7S
dm 136
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: REV: 1.0 VL53B5663A-K9S-F8S-E7S General Information 2GB 256MX72 DDR3 SDRAM ECC 244 PIN Mini-RDIMM Description: The VL53B5663A is a 256Mx72 DDR3 SDRAM high density Mini-RDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered
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VL53B5663A-K9S-F8S-E7S
256MX72
VL53B5663A
128Mx8
28-bit
244-pin
VL53B5663A-K9
PC3-10600
PC3-8500
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PC3-10600
Abstract: No abstract text available
Text: Product Specifications PART NO: REV: 1.0 VL43B5663A-K9S/F8S/E7S General Information 2GB 256MX72 DDR3 SDRAM ECC 204 PIN SO-RDIMM Description: The VL43B5663A is a 256Mx72 DDR3 SDRAM high density SO-RDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered
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VL43B5663A-K9S/F8S/E7S
256MX72
VL43B5663A
128Mx8
28-bit
204-pin
A10/AP
PC3-10600
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: REV: 1.0 VL43B5663A-K9S/F8S/E7S General Information 2GB 256MX72 DDR3 SDRAM ECC 204 PIN SO-RDIMM Description: The VL43B5663A is a 256Mx72 DDR3 SDRAM high density SO-RDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered
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VL43B5663A-K9S/F8S/E7S
256MX72
VL43B5663A
128Mx8
28-bit
204-pin
204-pin,
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240-PIN
Abstract: DDR3-1066 DDR3-1333 PC3-10600 VL33B5663F-K9
Text: Product Specifications PART NO.: VL33B5663F-K9S/F8S/E7S-H REV: 1.2 General Information 2GB 256Mx72 DDR3 SDRAM ULP ECC RDIMM 240-PIN WITH HEAT SPREADER Description The VL33B5663F is a 256Mx72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS
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VL33B5663F-K9S/F8S/E7S-H
256Mx72
240-PIN
VL33B5663F
128Mx8
28-bit
VN-110909
DDR3-1066
DDR3-1333
PC3-10600
VL33B5663F-K9
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL33B5663F-K9S/F8S/E7S-H REV: 1.2 General Information 2GB 256Mx72 DDR3 SDRAM ULP ECC RDIMM 240-PIN WITH HEAT SPREADER Description The VL33B5663F is a 256Mx72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS
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VL33B5663F-K9S/F8S/E7S-H
256Mx72
240-PIN
VL33B5663F
128Mx8
28-bit
VN-110909
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Untitled
Abstract: No abstract text available
Text: FLS0116 MOSFET Integrated Smart LED Lamp Driver IC with PFC Function Features Description • • The FLS0116 LED lamp driver is a simple IC with integrated MOSFET and PFC function. The special “adopted digital” technique automatically detects input
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FLS0116
FLS0116
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ST8008
Abstract: 112X64 CS 78 SEG79 U/25/20/TN26/15/850/SEG72
Text: ST ST8008 80 Output LCD Segment Driver IC PRELIMINARY Notice: Sitronix Technology Corp. reserves the right to change the contents in this document without prior notice. specification. Some parameters are subject to change. This is not a final DESCRIPTION The ST8008 is a 80-output segment driver IC suitable for driving small/medium scale dot matrix LCD panels, and is
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ST8008
ST8008
80-output
96-pin
ST8009
160X96)
112X64
CS 78
SEG79
U/25/20/TN26/15/850/SEG72
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Untitled
Abstract: No abstract text available
Text: 0.362-INCH SEVEN SEGMENT DISPLAYS OPTOELECTRONI CS RED FND350C FND357C FND358C HI-BRITE RED FND360C FND367C FND368C PACKAGE DIMENSIONS O R IE N T A T IO N M AR KS um I I .560 14.224 .550 (13.970) dpO .070 (2.73) .110 (2.794) I T X V D _! .030 (.762)— — 5192
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362-INCH
FND350C
FND357C
FND358C
FND360C
FND367C
FND368C
FND350C
ST2609
ST2610
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thermistor 054
Abstract: No abstract text available
Text: N EC b2E T> • ELECTRONI CS INC b42752S DQ3fiG5b EDM H N E C E DATA SHEET N EC LASER DIODE MODULE NDL5853P, NDL5853PA ELECTRON DEVICE 1 550 nm O PTICAL FIBER COMMUNICATIONS InGaAsP PH A SE-SH IFTED DFB-DC-PBH LA SER DIODE MODULE FOR 2 .5 Gb/s DESCRIPTIO N
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b42752S
NDL5853P,
NDL5853PA
NDL5853P
NDL5853PA
b427525
NPLS853P,
WPL58S3PÀ
thermistor 054
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SC1418
Abstract: SC1418* TRIAC sc151d triac 06040J7 SC151D 06010R5 3FT 85 Q2006
Text: TECCÔR ELECTRONICS INC S4E D flflTSfln 0GQ12ÌS 2 * T Z Ç - I S TECCOR II III ELECTRONICS, INC. 1801 HURD DRIVE IRVING, TEXAS 75038-4385 PHONE 214/580-1515 FAX 214/550-1309 MT2 o MT1 GATED TRIA CS 1-40 AMPS G e n e r a l especially for steady state power handling capability. The
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0GQ12Ã
O-218X
SC1418
SC1418* TRIAC
sc151d triac
06040J7
SC151D
06010R5
3FT 85
Q2006
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Untitled
Abstract: No abstract text available
Text: -2.354 [59.79] MAX.- DATE REV 2/2/06 ECN A2 7457 JM 3 -2 1 -0 6 A3 7549 TRM 7—15—08 A4 8488 TRM APP’D. BY - .550 [13.97] — TYP. 25 ' TYP. GO ro 9 10 B B I -.060 [1.52] TYP. cs o T.280 [7.11] TYP. ^ i—i ro 1 1 i n + H f.3 ^ 4 - 7 2+4+6+S+ 2+4+6+B+
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PR022-01.
CT710047
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L7550
Abstract: DL7500 L5070 7550P
Text: N E C ELECTRONI CS I NC b2E D • bME7S2S 0 0 3 0 0 0 2 D33 « N E C E DATA SHEET NEC LASER DIODE MODULE N D L 755 0P ELECTRON DEVICE 1 550 nm In G a A sP M Q W -D C -P B H -P U L S E D L A S E R D IO D E 14 PIN D IP M O D U L E W IT H S IN G L E M O D E FIBER
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L7550P
NDL5061
NDL5762P
NDL5766P
DL7500P
LS765P
NDL5765P1
L5070
NDL5071
NDL5772P
L7550
DL7500
7550P
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Untitled
Abstract: No abstract text available
Text: CYM1611 — ^ 16K x 16 Static RAM Module CYPRESS SEMICONDUCTOR Features Functional Description • High-density 256-kbit SRAM module T he CYM1611 is a very high performance 256-kbit static R A M module organized as 16K words by 16 bits. T he module is constructed from four 16K x 4 SRAMs in
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CYM1611
256-kbit
CYM1611
CYM16UHV-20M
CYM1611HV-25C
CYM1611LHV-25C
16UHV-25M
CYM1611LHV-25M
CYM1611HV-30C
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Untitled
Abstract: No abstract text available
Text: _ CYM1610 = =r SEMICONDUCTOR 16K x 16 Static RAM Module Features Functional Description • High-density 256K-bit SRAM module The CYM1610 is a high-performance 256-kbit static RAM module organized as 16K words by 16 bits. This module is
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CYM1610
256K-bit
CYM1610
256-kbit
oD-25C
CYM1610HD-25MB
1610HD-35C
CYM1610HD-35MB
CYM1610LHD-35MB
CYM1610HD-45C
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CYM1610
Abstract: LI330
Text: ss= , — ^ This is a partial data sheet. For complete data sheet, see Section 2, Static RAMs. _ CYM1610 SEMICONDUCTOR 16K x 16 Static RAM Module Features • High-denslty 256-kbit SRAM module • High-speed CMOS SRAMs — Access time of 12 ns
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CYM1610
256-kbit
1610111V15
1610HD-20
1610HD-2S
1610HD-35
1610HD-45
1610HD-50
LI330
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LIFO
Abstract: WD1510 WD1511 417-834 MI132 WD1510-00 WD1510-01 WD1510-02 cs-550 is
Text: LIFO/FIFO Buffer Register WD1510-00,-01,-02 OPERATION The WDlSlOcontains a 132 x 9 buffer which may be programmed for 128 x 9 operation. Setting the 128/132 pin to a Logic 0, enables the EMPTY and FULL lines to be activated when 128 bytes are read or written. When the 128/132 line is set to a Logic 1
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WD1510-00
WD1511
128x9
1-800-NET
LIFO
WD1510
417-834
MI132
WD1510-01
WD1510-02
cs-550 is
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Untitled
Abstract: No abstract text available
Text: This is a partial data sheet. F o r com plete data sheet, see Section 8, M odules. CYM1611 CYPRESS' SEMICONDUCTOR 16K x 16 Static RAM Module Features Functional Description • High-density 256-kbit SRAM module The CYM1611 is a very high performance 256-kbit static RAM module organized
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CYM1611
256-kbit
16-bit-wide
CYM1611
11HV-12
1611HV-15
1611HV-20
1611HV-25
1611HV-30
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Untitled
Abstract: No abstract text available
Text: CYM1611 CYPRESS SEMICONDUCTOR 16K x 16 Static RAM Module Features Functional Description • High-density 256-kilobit SRAM module • High-speed — Access time of 12 ns The CYM1611 is a very high performance 256-kilobit static RAM module organized as 16K words by 16 bits. The module is con
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CYM1611
256-kilobit
16-bit-wide
CYM1611HV--
1611PV-12C
1611H
1611PV-15C
1611LHV-20C
CYM1611PV--
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1618H
Abstract: No abstract text available
Text: _ CYM1610 SEMICONDUCTOR 16K x 16 Static RAM Module Features Functional Description • H igh-density 256-kbit SRAM module • H igh-speed CM OS SRAMs T h e CY M 1610 is a h igh-perform ance 256-kbit static R A M m odule organized
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CYM1610
256-kbit
1610LH
1610HD-35C
1610L
1610H
1610HD-45C
1610LHD-45C
1610HD-45M
1618H
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1611H
Abstract: 1611L
Text: CYM1611 r — c y p p fss y — SEMICONDUCTOR 16K x 16 Static RAM Module Features F unctional D escription • T h e CYM 1611 is a very high perform ance 256-kilobit static R A M m odule organized as 16K words by 16 bits. T h e module is con structed using four 16K x 4 static RAM s
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CYM1611
256-kilobit
1611H
1611PV
1611I
I611H
1611L
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