CSD25301W1015 Search Results

Contextual Info: CSD25301W1015 www.ti.com SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010 P-Channel NexFET Power MOSFET Check for Samples: CSD25301W1015 FEATURES 1 • • • • • • • PRODUCT SUMMARY Ultra Low Qg and Qgd Small Footprint Low Profile 0.62mm Height

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Abstract: CSD25301W1015
Contextual Info: P-Channel CICLON NexFET Power MOSFETs CSD25301W1015 Product Summary Features • Ultra Low Qg & Qgd D D • Small Footprint S S • RoHS Compliant nC 0.32 nC VGS= -1.5V 175 mΩ VGS=-2.5V 80 mΩ VGS=-4.5V 62 mΩ Vth Top View Level Package V 2.0 RDS on

CSD25301W1015

Abstract: G003
Contextual Info: CSD25301W1015 www.ti.com. SLPS210 – AUGUST 2009 P-Channel NexFET Power MOSFET

Contextual Info: CSD25301W1015 www.ti.com SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010 P-Channel NexFET Power MOSFET Check for Samples: CSD25301W1015 FEATURES 1 • • • • • • • PRODUCT SUMMARY Ultra Low Qg and Qgd Small Footprint Low Profile 0.62mm Height

CSD25301W1015

Abstract: G003
Contextual Info: CSD25301W1015 www.ti.com. SLPS210 – AUGUST 2009 P-Channel NexFET Power MOSFET

Contextual Info: CSD25301W1015 www.ti.com. SLPS210 – AUGUST 2009 P-Channel NexFET Power MOSFET

Contextual Info: P-Channel CICLON NexFET Power MOSFETs CSD25301W1015 Product Summary Features • Ultra Low Qg & Qgd D D • Small Footprint S S • RoHS Compliant nC 0.32 nC VGS= -1.5V 175 mΩ VGS=-2.5V 80 mΩ VGS=-4.5V 62 mΩ Vth Top View Level Package V 2.0 RDS on

Contextual Info: CSD25301W1015 www.ti.com SLPS210 – AUGUST 2009 P-Channel NexFET Power MOSFET Check for Samples: CSD25301W1015 FEATURES 1 • • • • • • • PRODUCT SUMMARY Ultra Low Qg and Qgd Small Footprint Low Profile 0.62mm Height Pb Free RoHS Compliant

CSD25301W1015

Abstract: G003
Contextual Info: CSD25301W1015 www.ti.com SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010 P-Channel NexFET Power MOSFET Check for Samples: CSD25301W1015 FEATURES 1 • • • • • • • PRODUCT SUMMARY Ultra Low Qg and Qgd Small Footprint Low Profile 0.62mm Height

BQ24153

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Contextual Info: Power Management Guide Power Management Guide 2014 2014 www.ti.com/power www.ti.com/power Power Management Guide Introduction and Contents Texas Instruments TI offers complete power solu­tions with a full line of highperformance products. These products, which range from standard linear

Texas Instruments Power Management Guide

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Contextual Info: Power Management Guide www.ti.com/power 2013 Power Management Guide Introduction and Contents Texas Instruments TI offers complete power solu­tions with a full line of highperformance products. These products, which range from standard linear regulators to highly efficient DC/DC

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Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Arduino Mega2560

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Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

TPS40K

Abstract: ti n channel mosfet NexFet High Current CSD75205W1015 CSD75204W15 CSD16401Q5 NexFET WLP 1500 Csd25302q2 CSD23201W10
Contextual Info: NexFET Power MOSFETs Quick Reference Guide TM Overview Today’s designers of high-power computing, networking, server systems and power supplies face increasingly stringent energy-efficient requirements. Texas Instruments’ acquisition of CICLON Semiconductor Device

CSD17310

Abstract: CSD17312 NexFET CSD87312Q3E CSD18532Q5B NexFet High Current CSD16321 CSD87353 CSD25401 CSD25302
Contextual Info: NexFET Power MOSFETs Power Management Quick Reference Guide TI’s premier power management inno­ vation called NexFET™ technology combines vertical current flow with a lateral power MOSFET. It provides a low on resistance and requires an extremely low gate charge with industry-standard