CSTBT IGBT Search Results

SOLAR TRANSISTOR

Abstract: SOLAR INVERTER
Contextual Info: Efficiency Benefits of Full Gate CSTBT in PV Applications Executive Summary Full Gate CSTBT™ allows you to harvest more energy than competing technologies. Powerex Intelligent Power Modules include gate drivers that are optimized for Full Gate CSTBT.

cm150rx1

Abstract: cm100rx-24 CM50MX-24A CM600HX-12A CM50M cm75mx-24a CM450DX-24A cm35mx CM35MX-24A CM600HX-24A
Contextual Info: Product Bulletin Diamond Power Products NX-SERIES IGBTS Package A Package B DESCRIPTION The NX -Series IGBT uses the 5th Generation CSTBT Carrier Stored Trench-Gate Bipolar Transistor chip. The CSTBT chip offers lower losses as compared to previous chip generations.

wind inverter

Abstract: SOLAR TRANSISTOR SOLAR INVERTER mitsubishi power module
Contextual Info: Efficiency Benefits of Full Gate CSTBT in Wind Power Applications Executive Summary Full Gate CSTBT™ allows you to harvest more energy from the same source than competing technologies. There are two major reasons that wind inverter customers focus on efficiency.

H BRIDGE inverters using igbt

Abstract: difference between inverter and ups difference between IGBT and MOSFET IN inverter n Power mosfet depletion
Contextual Info: New MEGA POWER DUAL IGBT Module with Advanced 1200V CSTBT Chip Junji Yamada*, Yoshiharu Yu*, John F. Donlon*, Eric R. Motto* * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan * Powerex Incorporated, Youngwood, Pennsylvania, USA

PM100RLA060

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM100RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM100RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM100CLA120 FLAT-BASE TYPE INSULATED PACKAGE PM100CLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C

E80276

Abstract: PM150RLA120
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM150RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C

E80276

Abstract: PM100CLA120
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM100CLA120 FLAT-BASE TYPE INSULATED PACKAGE PM100CLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM100RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM100RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C

E80276

Abstract: PM150RLA120 optocoupler PC 187
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM150RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM600CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM600CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.8V @Tj=125°C

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM150CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM150CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM200CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM200CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

PM150CLA060

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM150CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM150CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

30KW Inverter Diagram

Abstract: PM300CLA060 IGBT 10 A Optocoupler PC 801
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

PM100CLA060

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM100CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM100CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

E80276

Abstract: PM100RLA060 INVERTER FOR motor
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM100RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM100RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

E80276

Abstract: PM150RLA060
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM150RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM200RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM200RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM300RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

PM100*060

Abstract: optocoupler PC 187
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM100RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM100RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

E80276

Abstract: PM50B4LB060 OPTOCOUPLER 15V
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM50B4LB060 FLAT-BASE TYPE INSULATED PACKAGE PM50B4LB060 FEATURE a Adopting new 5th generation IGBT CSTBT TM ) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.55V @Tj=125°C

E80276

Abstract: PM50B5LA060
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM50B5LA060 FLAT-BASE TYPE INSULATED PACKAGE PM50B5LA060 FEATURE a Adopting new 5th generation IGBT CSTBT TM ) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.55V @Tj=125°C