CTP10 Search Results

Contextual Info: CTP1002 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)60 I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)2.2 Maximum Operating Temp (øC)100’ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: CTP100 Diodes Center-Tapped Positive CC Silicon Rectifier I O Max.(A) Output Current1.5 @Temp (øC) (Test Condition)75 V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)750m @Temp. (øC) (Test Condition)25’

Contextual Info: CTP1032 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)40m Absolute Max. Power Diss. (W)75m Maximum Operating Temp (øC) I(CBO) Max. (A)4.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: CTP1033 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)40m Absolute Max. Power Diss. (W)75m Maximum Operating Temp (øC) I(CBO) Max. (A)4.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: CTP1000 Diodes Center-Tapped Positive CC Silicon Rectifier I O Max.(A) Output Current1.5 @Temp (øC) (Test Condition)75 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)750m @Temp. (øC) (Test Condition)25’

Contextual Info: CTP1005 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)2.2 Maximum Operating Temp (øC)100’ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: CTP1006 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)2.2 Maximum Operating Temp (øC)100’ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: CTP1004 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)2.2 Maximum Operating Temp (øC)100’ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: CTP1036 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)40m Absolute Max. Power Diss. (W)75m Maximum Operating Temp (øC)75 I(CBO) Max. (A)4.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: CTP1035 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)40m Absolute Max. Power Diss. (W)75m Maximum Operating Temp (øC) I(CBO) Max. (A)4.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: CTP1034 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)40m Absolute Max. Power Diss. (W)75m Maximum Operating Temp (øC) I(CBO) Max. (A)4.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: CTP1003 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)60 I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)2.2 Maximum Operating Temp (øC)100’ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

ams 3654

Abstract: ASTM d792-66 AS1294 ASTM-D-3295 ASTM d792 D3295 Mil-1-7798-A 3651C M-22096A ASTM D412
Contextual Info: CONVOLUTED TUBING Convoluted tubing provides an efficient method of routing and protecting wire harness assemblies, while reducing the chance of installation damage. It also can serve to protect valuable wiring circuits. HellermannTyton’s convoluted tubing offers excellent

Contextual Info: IJC - V f i r A Switching Power Transistor • W K r J Ü lS l 10a 2SC4585 NPN S 6 P I6 S O u tlin e D im ensions (TP10W80HFX) A b s o lu te Maximum R a tin g s m Item s IE !§• Svmbol iSsif'¡S.8S Storage Temperature DC Peak DC ^ Î- ^ flîV jK Base Current

T21NRLC-LDN-NS-00

Abstract: CTP10ELF10MAA00 N33HRLG-LEK-M2-00 T23NRLH-LNN-NS00 N31HRLG-LNK-NS-00 N31HRHJ-LNK-NS-00 T21NRLH-LNN-NS-00 N32HRHJ-LNK-NS-00 15T-01SA-1000-N5RHV-F00-CE T23NRLC-LDN-NS-00
Contextual Info: Stepper Motors and Encoders Stepper Motors • NEMA 17, 23, and 34 sizes • Up to 1710 oz-in. 12.1 N • m holding torque • 3000 rpm max speed • 1.8 deg step angle • Matched with P7000 drives for high performance Encoders • 1000 counts/revolution resolution

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

PH 41113

Abstract: MYS 99 725 ABB inverter motor fault code MYS 99 003
Contextual Info: ProMinent Product Catalog S e c t i o n Ta b R e f e r e n c e Table of Contents. II SECTION TABS PA G E 1 PA G E 2 7 PA G E 6 7  Solenoid & motor pump overview

RESISTOR CR25 philips

Abstract: philips resistor CR25 hp778d pm5171 BZY 56 cr25 philips RESISTOR CR25 BLV33F 2222-809-05002 tv schematic diagram PHILIPS
Contextual Info: APPLICATION NOTE A wide-band class-A linear power amplifier 174 − 230 MHz with 2 transistors BLV33F ECO8005 Philips Semiconductors A wide-band class-A linear power amplifier (174 − 230 MHz) with 2 transistors BLV33F CONTENTS 1 ABSTRACT 2 INTRODUCTION

Contextual Info: 1 2 3 4 5 6 A 7 8 9 SPECIFICATIONS Contact material: Copper alloy Contact plating: Gold Housing material: PC, UL94V-2 UL94V-0 available on request Keyed B A B C Flat oval wire C Round wire Contact blade D D 2 prong for stranded conductor E F Series Type

CTP-100-10-10-PX-MS

Contextual Info: 1 2 3 4 5 6 7 SPECIFICATIONS Contact material: Contact plating: Housing material: Shield material: Shield plating: Wire type: A 8 9 Copper alloy Gold PC, UL94V-2 UL94V-0 available on request Brass 0.25mm Nickel Flat or optional round A B B C C For flat wire

AF114

Abstract: 2N2448 2N27S
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: Routing and Protecting Cable Management Products Convoluted Tubing Convoluted tubing provides an efficient method of routing and protecting wire harness assemblies, while reducing the chance of installation damage. It also can serve to protect valuable wiring