C27P
Abstract: zener diode f7 850 zener diode marking E7 zener diode F6 zener diode E7 Diode SMA marking code f4 MARKING CODE f5 5 lead G7 diode sma diode H4 H3 diode
Text: BZD27C Series 0.8 W Surface Mount Glass Passivated Zener Diode Dimensions in mm. Voltage 11 to 240 V CASE: M1F DO219AA Power 0.8 W R • Silicon planar zener diodes • Low profile surface-mount package • Zener and surge curren specification • Low leakage curren
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BZD27C
DO219AA)
C200P
C27P
zener diode f7 850
zener diode marking E7
zener diode F6
zener diode E7
Diode SMA marking code f4
MARKING CODE f5 5 lead
G7 diode
sma diode H4
H3 diode
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z15 Diode glass
Abstract: zener diode z33 diode Z27 Zener diode z12 15 Z15 marking diode diode Z47 MARKING CODE 24Z MARKING Z68 24z diode Z68 MARKING
Text: BZD27C Series 0.8 W Surface Mount Glass Passivated Zener Diode Dimensions in mm. Voltage 11 to 240 V CASE: M1F DO219AA Power 0.8 W R • Silicon planar zener diodes • Low profile surface-mount package • Zener and surge curren specification • Low leakage curren
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BZD27C
DO219AA)
C200P
z15 Diode glass
zener diode z33
diode Z27
Zener diode z12 15
Z15 marking diode
diode Z47
MARKING CODE 24Z
MARKING Z68
24z diode
Z68 MARKING
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zener diode marking E7
Abstract: zener diode E7 zener diode f7 850 Diode SMA marking code f4 SMA Diode marking code g7 diode SMA marking 141 zener diode f7 BZD27C zener diode F6 BZD27C11P
Text: BZD27C SERIES 0.8 Watts Voltage Regulator Diodes Sub SMA Features Silicon planar zener diodes Low profile surface-mount package Zener and surge curren specification Low leakage curren Excellent stability High temperature soldering 260oC / 10 sec. at terminals
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BZD27C
260oC
zener diode marking E7
zener diode E7
zener diode f7 850
Diode SMA marking code f4
SMA Diode marking code g7
diode SMA marking 141
zener diode f7
zener diode F6
BZD27C11P
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Untitled
Abstract: No abstract text available
Text: BZD27C SERIES 0.8 Watts Voltage Regulator Diodes Sub SMA Features Silicon planar zener diodes Low profile surface-mount package Zener and surge curren specification Low leakage curren Excellent stability High temperature soldering 260oC / 10 sec. at terminals
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BZD27C
260oC
BZD27C47P
BZD27C62P
BZD27C68P
BZD27C100P
BZD27C120P
BZD27C200P
BZD27C220P
BZD27C240P
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Untitled
Abstract: No abstract text available
Text: BZD27C SERIES 0.8 Watts Voltage Regulator Diodes Sub SMA Features Silicon planar zener diodes Low profile surface-mount package Zener and surge curren specification Low leakage curren Excellent stability High temperature soldering 260oC / 10 sec. at terminals
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BZD27C
260oC
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Untitled
Abstract: No abstract text available
Text: SPX4041 Precision 1.24V Shunt Voltage Reference FEATURES • Voltage Tolerance.1% and 2% ■ Wide Operating Curren.100µA to 15mA ■ Low Temperature Coefficient.50ppm/°C ■ Fixed Reverse Breakdown Voltage.1.24V
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SPX4041
50ppm/
TL431
SPX4041
OT-23
SPX4041S/TR
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Untitled
Abstract: No abstract text available
Text: S2A thru S2M SURFACE MOUNT GLASS PASSIVATED RECTIFIERS REVERSE VOLTAGE POWER CURREN - 50 to 1000Volts - 2.0 Amperes SMB FEATURES ● Glass passivated chip ● For surface mounted applications ● Low reverse leakage current .083 2.11 .075(1.91) ● Low forward voltage drop
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1000Volts
300US
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Untitled
Abstract: No abstract text available
Text: Transistors Transistors Diodes IC IC SMDType Type SMD Product specification FMW3 • Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=50mA 1 FMW3 2 3 ■ Absolute Maximum Ratings Ta = 25℃ Parameter
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300mW
100MHz
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Untitled
Abstract: No abstract text available
Text: S2A thru S2M SURFACE MOUNT GLASS PASSIVATED RECTIFIERS REVERSE VOLTAGE POWER CURREN - 50 to 1000Volts - 2.0 Amperes SMB FEATURES ● Glass passivated chip ● For surface mounted applications ● Low reverse leakage current .083 2.11 .075(1.91) ● Low forward voltage drop
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1000Volts
300US
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type General purpose Dual PNP Transistors FMS4 • Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=-50mA 1 2 3 FMS4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating
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300mW
-50mA
100MHz
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type General purpose Dual PNP Transistors FMS3 • Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=-50mA 1 2 3 FMS3 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating
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300mW
-50mA
100MHz
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Untitled
Abstract: No abstract text available
Text: SPX4041 Precision 1.24V Shunt Voltage Reference FEATURES • Voltage Tolerance.1% and 2% ■ Wide Operating Curren.100µA to 15mA ■ Low Temperature Coefficient.50ppm/°C ■ Fixed Reverse Breakdown Voltage.1.24V
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SPX4041
50ppm/
TL431
SPX4041
OT-23
SPX4041S/TR
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5KP10A
Abstract: 5KP10CA 5KP11A 5KP11CA 5KP12A 5KP12CA 5KP13A 5KP13CA 5KP14A 5KP14CA
Text: 5KP SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.0 TO 250 Volts 5000 Watt Peak Pulse Power REVERS REVERSE BREAKDOWN BREAKDOWN PEAK E STANDTEST VOLTAGE VOLTAGE PULSE PART NUMBER LEAKAG OFF CURREN VBR V MIN. VBR(V) MAX.
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20x20mm)
50mVp-p
5KP10A
5KP10CA
5KP11A
5KP11CA
5KP12A
5KP12CA
5KP13A
5KP13CA
5KP14A
5KP14CA
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Untitled
Abstract: No abstract text available
Text: Product specification FMW4 • Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=50mA 1 FMW4 2 3 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO 120 V
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300mW
100MHz
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TVST5VESGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD TVST5VESGP ULTRA-LOW CAPACITANCE TVS VOLTAGE 5 V 150 WATTS PEAK PULSE POWER FEATURES *150W peak pulse power dissipation rating at tp= 8X20uSec * Low leakage curren a *Protects up to two I/O lines SC-75/SOT-416 * High temperature soldering guaranteed :
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8X20uSec
SC-75/SOT-416
oC/10
SC-75
TVST5VESGP
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Untitled
Abstract: No abstract text available
Text: Transistors Diodes IC SMD Type Product specification FMS3 • Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=-50mA 1 2 3 FMS3 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage
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300mW
-50mA
100MHz
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type General purpose Dual NPN Transistors FMW4 • Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=50mA 1 FMW4 2 3 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating
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300mW
100MHz
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Untitled
Abstract: No abstract text available
Text: LCE SERIES LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE 6.5 TO 30 Volts 1500 Watt Peak Pulse Power Maximum Maximum StandBreakdown Test M Reverse Clamping off Voltage Curren PART Voltage Leakage Voltage V BR t at IT NUMBER at Ipp at VWM VWM
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LCE10A
LCE11A
LCE12A
LCE13A
LCE14A
LCE15A
LCE16A
LCE17A
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Untitled
Abstract: No abstract text available
Text: EL2008C Features • H igh slew rate— 2500 V/jxs • W ide bandw idth— 100 M H z @ R L = 50ft 55 M H z @ R l = 10ft • O u tp u t curren t— 1A continuous • O u tput im pedance— lf t • Q uiescent curren t— 13 m A • S hort circuit protected
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EL2008C
EL2008CT
T0-220
DP0028
T0-220
EL2008
--12V
EL2003
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M2008
Abstract: No abstract text available
Text: EL2008C F eatu res • H igh slew rate— 2500 V/jxs • W ide bandw idth— 100 M H z @ R L = 50ft 55 M H z @ R L = 10ft • O u tput curren t— 1A continuous • O u tp ut im pedance— lft • Q uiescent curren t— 13 mA • S h o rt circuit protected
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EL2008C
EL2008
EL2009
EL2008.
EL2008C
M2008
159pF
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Untitled
Abstract: No abstract text available
Text: EL2018C \ \ F e a tu r e s G en era l D escrip i • F a s t response tim e—20 ns • W ide in p u t differential voltage range— 24V to ± 15V supplies • Precision in p u t stage— V os = 1 mV • Low in p u t bias curren t— IB = 100 nA • Low in p u t offset curren t—
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EL2018C
e--20
EL2018
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7150A
Abstract: 15CA
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150M2YK2 HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Curren" Gain: h^g=80 Min. (Ic=150A)
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MG150M2YK2
7150A
15CA
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Untitled
Abstract: No abstract text available
Text: POWER LITEM? I SEMICONDUCTORS SB320 thru SB360 VO LTAG E RANGE 20 to 60 Volts CURREN T 3 AMPS. SC H O m C f BARRIER RECTIFIERS 3.0 Amperes FEATURES • Metal-Semiconductor junction with guard ring • Epitaxial construction DO-201 AD • Lo w forward voltage drop
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SB320
SB360
DO-201
0-201AD
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Untitled
Abstract: No abstract text available
Text: KSE200 NPN EPITAXIAL SILICON TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURREN T GAIN-BANDWIDTH PRODUCT-MIN fT=65MBz @lc=100nA TO-126 Complement to KSE210 ABSO LUTE MAXIMUM RATINGS Characteristic Symbol Rating
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KSE200
65MBz
100nA
KSE210
O-126
100mA,
10MHz
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