CURREN POWER Search Results

C27P

Abstract: zener diode f7 850 zener diode marking E7 zener diode F6 zener diode E7 Diode SMA marking code f4 MARKING CODE f5 5 lead G7 diode sma diode H4 H3 diode
Contextual Info: BZD27C Series 0.8 W Surface Mount Glass Passivated Zener Diode Dimensions in mm. Voltage 11 to 240 V CASE: M1F DO219AA Power 0.8 W R • Silicon planar zener diodes • Low profile surface-mount package • Zener and surge curren specification • Low leakage curren

z15 Diode glass

Abstract: zener diode z33 diode Z27 Zener diode z12 15 Z15 marking diode diode Z47 MARKING CODE 24Z MARKING Z68 24z diode Z68 MARKING
Contextual Info: BZD27C Series 0.8 W Surface Mount Glass Passivated Zener Diode Dimensions in mm. Voltage 11 to 240 V CASE: M1F DO219AA Power 0.8 W R • Silicon planar zener diodes • Low profile surface-mount package • Zener and surge curren specification • Low leakage curren

zener diode marking E7

Abstract: zener diode E7 zener diode f7 850 Diode SMA marking code f4 SMA Diode marking code g7 diode SMA marking 141 zener diode f7 BZD27C zener diode F6 BZD27C11P
Contextual Info: BZD27C SERIES 0.8 Watts Voltage Regulator Diodes Sub SMA Features       Silicon planar zener diodes Low profile surface-mount package Zener and surge curren specification Low leakage curren Excellent stability High temperature soldering 260oC / 10 sec. at terminals

Contextual Info: BZD27C SERIES 0.8 Watts Voltage Regulator Diodes Sub SMA Features       Silicon planar zener diodes Low profile surface-mount package Zener and surge curren specification Low leakage curren Excellent stability High temperature soldering 260oC / 10 sec. at terminals

Contextual Info: BZD27C SERIES 0.8 Watts Voltage Regulator Diodes Sub SMA Features       Silicon planar zener diodes Low profile surface-mount package Zener and surge curren specification Low leakage curren Excellent stability High temperature soldering 260oC / 10 sec. at terminals

Contextual Info: EL2008C Features • H igh slew rate— 2500 V/jxs • W ide bandw idth— 100 M H z @ R L = 50ft 55 M H z @ R l = 10ft • O u tp u t curren t— 1A continuous • O u tput im pedance— lf t • Q uiescent curren t— 13 m A • S hort circuit protected

M2008

Contextual Info: EL2008C F eatu res • H igh slew rate— 2500 V/jxs • W ide bandw idth— 100 M H z @ R L = 50ft 55 M H z @ R L = 10ft • O u tput curren t— 1A continuous • O u tp ut im pedance— lft • Q uiescent curren t— 13 mA • S h o rt circuit protected

Contextual Info: SPX4041 Precision 1.24V Shunt Voltage Reference FEATURES • Voltage Tolerance.1% and 2% ■ Wide Operating Curren.100µA to 15mA ■ Low Temperature Coefficient.50ppm/°C ■ Fixed Reverse Breakdown Voltage.1.24V

Contextual Info: EL2018C \ \ F e a tu r e s G en era l D escrip i • F a s t response tim e—20 ns • W ide in p u t differential voltage range— 24V to ± 15V supplies • Precision in p u t stage— V os = 1 mV • Low in p u t bias curren t— IB = 100 nA • Low in p u t offset curren t—

Contextual Info: S2A thru S2M SURFACE MOUNT GLASS PASSIVATED RECTIFIERS REVERSE VOLTAGE POWER CURREN - 50 to 1000Volts - 2.0 Amperes SMB FEATURES ● Glass passivated chip ● For surface mounted applications ● Low reverse leakage current .083 2.11 .075(1.91) ● Low forward voltage drop

Contextual Info: Transistors Transistors Diodes IC IC SMDType Type SMD Product specification FMW3 • Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=50mA 1 FMW3 2 3 ■ Absolute Maximum Ratings Ta = 25℃ Parameter

Contextual Info: S2A thru S2M SURFACE MOUNT GLASS PASSIVATED RECTIFIERS REVERSE VOLTAGE POWER CURREN - 50 to 1000Volts - 2.0 Amperes SMB FEATURES ● Glass passivated chip ● For surface mounted applications ● Low reverse leakage current .083 2.11 .075(1.91) ● Low forward voltage drop

Contextual Info: Transistors IC SMD Type General purpose Dual PNP Transistors FMS4 • Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=-50mA 1 2 3 FMS4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating

Contextual Info: Transistors IC SMD Type General purpose Dual PNP Transistors FMS3 • Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=-50mA 1 2 3 FMS3 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating

5KP10A

Abstract: 5KP10CA 5KP11A 5KP11CA 5KP12A 5KP12CA 5KP13A 5KP13CA 5KP14A 5KP14CA
Contextual Info: 5KP SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.0 TO 250 Volts 5000 Watt Peak Pulse Power REVERS REVERSE BREAKDOWN BREAKDOWN PEAK E STANDTEST VOLTAGE VOLTAGE PULSE PART NUMBER LEAKAG OFF CURREN VBR V MIN. VBR(V) MAX.

Contextual Info: Product specification FMW4 • Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=50mA 1 FMW4 2 3 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO 120 V

Contextual Info: Transistors Diodes IC SMD Type Product specification FMS4 • Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=-50mA 1 2 3 FMS4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage

TVST5VESGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD TVST5VESGP ULTRA-LOW CAPACITANCE TVS VOLTAGE 5 V 150 WATTS PEAK PULSE POWER FEATURES *150W peak pulse power dissipation rating at tp= 8X20uSec * Low leakage curren a *Protects up to two I/O lines SC-75/SOT-416 * High temperature soldering guaranteed :

Contextual Info: Transistors Diodes IC SMD Type Product specification FMS3 • Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=-50mA 1 2 3 FMS3 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage

Contextual Info: Transistors IC SMD Type General purpose Dual NPN Transistors FMW4 • Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=50mA 1 FMW4 2 3 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating

7150A

Abstract: 15CA
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150M2YK2 HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Curren" Gain: h^g=80 Min. (Ic=150A)

Contextual Info: POWER LITEM? I SEMICONDUCTORS SB320 thru SB360 VO LTAG E RANGE 20 to 60 Volts CURREN T 3 AMPS. SC H O m C f BARRIER RECTIFIERS 3.0 Amperes FEATURES • Metal-Semiconductor junction with guard ring • Epitaxial construction DO-201 AD • Lo w forward voltage drop

Contextual Info: KSE200 NPN EPITAXIAL SILICON TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURREN T GAIN-BANDWIDTH PRODUCT-MIN fT=65MBz @lc=100nA TO-126 Complement to KSE210 ABSO LUTE MAXIMUM RATINGS Characteristic Symbol Rating

Contextual Info: LCE SERIES LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE 6.5 TO 30 Volts 1500 Watt Peak Pulse Power Maximum Maximum StandBreakdown Test M Reverse Clamping off Voltage Curren PART Voltage Leakage Voltage V BR t at IT NUMBER at Ipp at VWM VWM