CURRENT CUT OFF Search Results
CURRENT CUT OFF Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN |
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MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN |
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MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
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MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
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MGN1S0508MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-8V GAN |
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CURRENT CUT OFF Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2SC184Contextual Info: Transistors 2SC184 USHA INDIA LTD ELECTRICAL CHARACTERISTICS (Ta=25°C) Characteristic Symbol Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain |
OCR Scan |
2SC184 2SC184 | |
2sc945
Abstract: 30-LC USHA
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OCR Scan |
2SC945 350pA 100fiA 2sc945 30-LC USHA | |
ic 748
Abstract: 2SC4688
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OCR Scan |
2SC4688 ic 748 2SC4688 | |
S1375Contextual Info: SILICON NPN EPITAXIAL TYPE S1375 ELECTRICAL CHARACTERISTICS Ta=25°C CHARACTERISTIC SYMBOL Collector Cut-off Current ÏCB0 lEBO Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage v (BR)CE0 MIN. |
OCR Scan |
S1375 150mA 500mA 500mA, S1375 | |
Contextual Info: SILICON NPN EPITAXIAL PLANAR TY P E 2SC4253 Weight ELECTRICAL CHARACTERISTICS Ta=25°C CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Saturation Voltage SYMBOL TYP. MAX. UNIT - - 0.1 (JA |
OCR Scan |
2SC4253 30MHz | |
GOC 63Contextual Info: TOSHIBA 2SC4248 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4248 TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage SYMBOL TEST CONDITION |
OCR Scan |
2SC4248 1000MHz --10V, 30MHz GOC 63 | |
2SC2347
Abstract: r1il
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OCR Scan |
2SC2347 30MHz 2SC2347 r1il | |
Contextual Info: TOSHIBA 2SC4252 TOSHIBA TRANSISTOR WÊF SILICON NPN EPITAXIAL PLANAR TYPE wmr TV TUNER, VHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage SYMBOL TEST CONDITION |
OCR Scan |
2SC4252 500MHz --10V, 30MHz | |
Contextual Info: TOSHIBA 2SC3665 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 7<;r Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage |
OCR Scan |
2SC3665 100mA 500mA, 500mA | |
Wf vqbContextual Info: TOSHIBA 2SC4247 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE ?<;r Ù.1 WÊÊÊF ù.1 • « TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage |
OCR Scan |
2SC4247 1000MHz --10V, 30MHz Wf vqb | |
2-7D101A
Abstract: 2SA1425 2SC3665
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OCR Scan |
2SA1425 VCB----120V, --10mA, 100mA --500mA, --50mA --500mA 100mA 2-7D101A 2SA1425 2SC3665 | |
U2550
Abstract: 2sd122
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OCR Scan |
2SD1220 200mA 500mA, U2550 2sd122 | |
BCX70GRContextual Info: BCX70 ELECTRICAL CHARACTERISTICS at Tamb= 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Collector-Emitter Breakdown Voltage V (BR)CEO 45 V Emitter-Base Breakdown Voltage V(BR)EBO 5 V Collector-Emitter Cut-off Current Emitter-Base Cut-Off Current Base-Emitter |
OCR Scan |
BCX70 125mA BCX71 BCX70G BCX70H BCX70GR | |
2sc2349Contextual Info: TOSHIBA 2SC2349 TOSHIBA TRANSISTOR TV VHF OSCILLATOR APPLICATIONS. CHARACTERISTIC SILICON NPN EPITAXIAL PLANAR TYPE 2SC2349 SYMBOL TEST CONDITION U nit in mm MIN. TYP. MAX. UNIT Collector Cut-off Current ÏCBO V c b = 15V, IE = 0 — — 0.1 Em itter Cut-off Current |
OCR Scan |
2SC2349 w5-09 2sc2349 | |
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Contextual Info: J Q J SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. U n it in mm SYMBOL CHARACTERISTIC TEST CONDITION Collector Cut-off Current VCb = -1 2 0 V , IE =0 *CBO Em itter Cut-off Current lEBO V e b = ~ 5V> ÏC ^ 0 DC Current Gain Vc e = —10V, I q = —500mA |
OCR Scan |
--10V, --500mA --500mA, --50mA -500m | |
AN2627
Abstract: DR73-4R7 ST8R00 ST8R00W GRM31CR61E106KA12B
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Original |
AN2627 ST8R00 ST8R00) ST8R00W) ST8R00and AN2627 DR73-4R7 ST8R00W GRM31CR61E106KA12B | |
GRM31CR61E106KA12B
Abstract: AN2627 ST8R00 ST8R00W DR73-4R7
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Original |
AN2627 ST8R00 ST8R00) ST8R00W) ST8R00y GRM31CR61E106KA12B AN2627 ST8R00W DR73-4R7 | |
Contextual Info: 2SA1425 TO SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS i <; a 1 á i s mm m m • ■ v POWER AMPLIFIER APPLICATIONS. Unit in mm SYMBOL TEST CONDITION CHARACTERISTIC Collector Cut-off Current xCBO V C B =-120V , IE = 0 Emitter Cut-off Current |
OCR Scan |
2SA1425 -120V --10mA, --100mA --500mA, --50mA -500m -100m | |
CGR18650CG
Abstract: Panasonic CGR18650CG CGR18650C CGR18650 110mA 250mah panasonic lithium battery cell 3.6V
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Original |
CGR18650CG 1500mA) 110mA 25deg 4300mA) 2150mA) 430mA) CGR18650CG Panasonic CGR18650CG CGR18650C CGR18650 250mah panasonic lithium battery cell 3.6V | |
panasonic 2m236
Abstract: 2M236 A.E.B 375 60nm panasonic relay
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Original |
00A/3 ASCTB232E 201201-T panasonic 2m236 2M236 A.E.B 375 60nm panasonic relay | |
2M236
Abstract: A.E.B 375 61216 AEB310012 panasonic 2m236 100A relay relay 12v 100A AEB310024 AEB310036 AT20C
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Original |
00A/3 310710J 2M236 A.E.B 375 61216 AEB310012 panasonic 2m236 100A relay relay 12v 100A AEB310024 AEB310036 AT20C | |
Contextual Info: TOSHIBA 2SC5445 TO SH IB A TRA N SISTO R SILICON NPN TRIPLE D IFFU SED M ESA TYPE 2SC5445 H O RIZO N TAL D EFLECTIO N O U TPU T FO R SUPER HIGH RESO LU TIO N CHARACTERISTIC SYMBOL Collector Cut-off Current !CBO Emitter Cut-off Current Ie b o Colleetor-Emitter Breakdown |
OCR Scan |
2SC5445 | |
A3179
Abstract: A3179-01 C1103-04 G5853-103 G5853-11 G5853-13 G8373-01 G8373-03 G8423-03 G8423-05
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Original |
G8423/G8373/G5853 A3179 A3179-01 C1103-04 G8423-03 G8423-05 G8373-01 G8373-03 G5853-103 G5853-11 A3179 A3179-01 C1103-04 G5853-103 G5853-11 G5853-13 G8373-01 G8373-03 G8423-03 G8423-05 | |
InGaAs PIN photodiode Long Wavelength 2.6Contextual Info: InGaAs PIN photodiodes G8423/G8373/G5853 series Long wavelength type Cut-off wavelength: 2.55 to 2.6 m Features Applications Cut-off wavelength: 2.55 to 2.6 m Gas analysis 3-pin TO-18 package: low price Spectrophotometer Thermoelectrically cooled TO-8 package: low dark current |
Original |
G8423/G8373/G5853 C4159-03 A3179 A3179-01 C1103-04 G8423-03 G8423-05 G8373-01 G8373-03 G5853-103 InGaAs PIN photodiode Long Wavelength 2.6 |