CURRENT300M Search Results
CURRENT300M Datasheets Context Search
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Contextual Info: TPA62A18 Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage62 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage56 I(PPM) Max.(A)Pk.Pulse Current300m |
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TPA62A18 Voltage62 Voltage56 Current300m Voltage82 | |
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Contextual Info: MA49192-138 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power10m Frequency Min. (Hz)40G Frequency Max. (Hz)60G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage4.0 I(Oper.) Typ.(A) Oper. Current300m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT |
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MA49192-138 Power10m Current300m | |
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Contextual Info: TPA62B12 Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage62 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage56 I(PPM) Max.(A)Pk.Pulse Current300m |
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TPA62B12 Voltage62 Voltage56 Current300m Voltage75 | |
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Contextual Info: DGB8255 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)26.5G Frequency Max. (Hz)40G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage5.0 I(Oper.) Typ.(A) Oper. Current300m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT |
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DGB8255 Power20m Current300m | |
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Contextual Info: F1841CAH600 Thyristors Center-Tapped CA Thyristor Doubler V DRM Max. (V) V(RRM) Max. (V)600 I(T) Rated Maximum (A)40 @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)1.0k¥ @ t(w) (s) (Test Condition) I(GT) Max. (A)150m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current300m |
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F1841CAH600 Current300m Current20m Junc-Case300m | |
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Contextual Info: F1856CCH1400 Thyristors Center-Tapped CC Thyristor Doubler V DRM Max. (V) V(RRM) Max. (V)1.4k I(T) Rated Maximum (A)55 @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)1.5k¥ @ t(w) (s) (Test Condition) I(GT) Max. (A)150m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current300m |
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F1856CCH1400 Current300m Current20m Junc-Case250m | |
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Contextual Info: H1649 Diodes Single-Phase High-Speed Bridge Rectifier Military/High-RelN I O Max.(A) Output Current300m V(RRM)(V) Rep.Pk.Rev. Voltage8.0k t(rr) Max.(s) Rev.Rec. Time250n @I(F) (A) (Test Condition)1.0m @I(R) (A) (Test Condition)100m V(FM) Max.(V) Forward Voltage16 |
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H1649 Current300m Time250n Voltage16 | |
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Contextual Info: 1N6638+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current300m V(RRM)(V) Rep.Pk.Rev. Voltage150 t(rr) Max.(s) Rev.Rec. Time4.5n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage1.1 |
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1N6638 Current300m Voltage150 Current500n Current100u StyleDO-35 | |
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Contextual Info: 1N6640+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current300m V(RRM)(V) Rep.Pk.Rev. Voltage75 t(rr) Max.(s) Rev.Rec. Time4.0n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage1.1 |
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1N6640 Current300m Voltage75 Current100n Current100u StyleDO-35 rent100u | |
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Contextual Info: 870C Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current300m @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage7.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage10 @I(FM) (A) (Test Condition)300m @Temp. (øC) (Test Condition)25 |
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Current300m Voltage10 Current25u | |
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Contextual Info: 688-20R Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current300m @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage20k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.20 V(FM) Max.(V) Forward Voltage34 @I(FM) (A) (Test Condition)0.4 @Temp. (øC) (Test Condition)25 |
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688-20R Current300m Voltage20k Voltage34 Current100u | |
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Contextual Info: 1N530 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current300m @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3.0 V(FM) Max.(V) Forward Voltage2.0 @I(FM) (A) (Test Condition).30 @Temp. (øC) (Test Condition)25’ |
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1N530 Current300m Voltage100 | |
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Contextual Info: 880C Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current300m @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage8.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage10 @I(FM) (A) (Test Condition)300m @Temp. (øC) (Test Condition)25 |
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Current300m Voltage10 Current25u | |
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Contextual Info: 688-20 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current300m @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage20k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.20 V(FM) Max.(V) Forward Voltage34 @I(FM) (A) (Test Condition).40 @Temp. (øC) (Test Condition)25 |
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Current300m Voltage20k Voltage34 Current100u | |
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Contextual Info: 5A13/18 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current300m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage50 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition) |
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5A13/18 Current300m Voltage50 Current10u StyleTO-18 | |
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Contextual Info: 1A13/18 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current300m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage10 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition) |
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1A13/18 Current300m Voltage10 Current10u StyleTO-18 | |
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Contextual Info: TPA150B12 Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage150 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage135 I(PPM) Max.(A)Pk.Pulse Current300m |
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TPA150B12 Voltage150 Voltage135 Current300m Voltage181 | |
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Contextual Info: 10A13/18 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current300m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition) |
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10A13/18 Current300m Voltage100 Current10u StyleTO-18 | |
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Contextual Info: 1N6496+JANTXV Diodes Core-Driver Diode Array Military/High-RelY Circuits Per Package2 Diodes Per Circuit16 I F Max. (A) Forward Current300m V(RRM) (V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev. Rec. Time20n @I(F) (A) (Test Condition)200m @I(R) (A) (Test Condition)200m |
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1N6496 Circuit16 Current300m Voltage50 Time20n Current50n | |
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Contextual Info: F1827DH1400 Thyristors Half-Controlled Negative Thyristor Doubler V DRM Max. (V) V(RRM) Max. (V)1.4k I(T) Rated Maximum (A)25 @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)400¥ @ t(w) (s) (Test Condition) I(GT) Max. (A)150m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current300m |
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F1827DH1400 Current300m Current20m Junc-Case400m nc-Case400m | |
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Contextual Info: F1827CCH1400 Thyristors Center-Tapped CC Thyristor Doubler V DRM Max. (V) V(RRM) Max. (V)1.4k I(T) Rated Maximum (A)25 @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)400¥ @ t(w) (s) (Test Condition) I(GT) Max. (A)150m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current300m |
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F1827CCH1400 Current300m Current20m Junc-Case400m | |
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Contextual Info: F1857CCH1400 Thyristors Center-Tapped CC Thyristor Doubler V DRM Max. (V) V(RRM) Max. (V)1.4k I(T) Rated Maximum (A)55 @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)1.5k¥ @ t(w) (s) (Test Condition) I(GT) Max. (A)150m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current300m |
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F1857CCH1400 Current300m Current20m Junc-Case250m | |
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Contextual Info: 1N605A Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current300m @Temp (øC) (Test Condition)100’ V(RRM)(V) Rep.Pk.Rev. Voltage500 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0 V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition).40 @Temp. (øC) (Test Condition)25 |
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1N605A Current300m Voltage500 | |
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Contextual Info: 1N535 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current300m @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3.0 V(FM) Max.(V) Forward Voltage2.0 @I(FM) (A) (Test Condition).30 @Temp. (øC) (Test Condition)25’ |
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1N535 Current300m Voltage600 Current20u | |